FDC6324L
Integrated Load Switch Features
Absolute Operating Range TA = 25°C unless otherwise noted
Symbol Parameter FDC6324L Units
VIN Input Voltage Range 3 - 20 V
VON/OFF ON/OFF Voltage Range 1.5 - 8 V
I L Load Current @ VDROP=0.5V - Continuous (Note 1) 1.5 A
- Pulsed (Note 1 & 3) 2.5
PDMaximum Power Dissipation (Note 2a) 0.7 W
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
ESD Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm) 6kV
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 2a) 180 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 2) 60 °C/W
Publication Order Number:
FDC6324L/D
General Description
These Integrated Load Switches are produced using ON
Semiconductor's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to
minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage high side load switch application where low conduction
loss and ease of driving are needed.
VDROP=0.2V @ VIN=12V, IL=1A, VON/OFF=1.5 to 8V
VDROP=0.3V @ VIN=5V, IL=1A, VON/OFF=1.5 to 8V.
High density cell design for extremely low on-resistance.
VON/OFF Zener protection for ESD ruggedness. >6KV Human
Body Model.
SuperSOTTM-6 package design using copper lead frame for superior
thermal and electrical capabilities.
See Application Circuit
1
5
6
3
2
Vin,R1 Vout,C1
R2
ON/OFF
R1,C1
Q2
Q1
Vout,C1
4
IN OUT
ON/OFF
EQUIVALENT CIRCUIT
VDROP
+-
SuperSOT -6
TM
pin 1
SOT-23 SuperSOTTM-8 SOIC-16
SO-8 SOT-223
SuperSOTTM-6
© 1999 Semiconductor Components Industries, LLC.
October-2017, Rev. 4
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
IFL Forward Leakage Current VIN = 20 V, VON/OFF = 0 V 1µA
IRL Reverse Leakage Current VIN = -20 V, VON/OFF = 0 V -1 µA
ON CHARACTERISTICS (Note 3)
VIN Input Voltage 3 20 V
VON/OFF On/Off Voltage 1.5 8V
VDROP Conduction Voltage Drop @ 1A VIN = 10 V, VON/OFF = 3.3V0.135 0.2 V
VIN = 5 V, VON/OFF = 3.3 V0.215 0.3
ILLoad Current VDROP = 0.2 V, VIN = 10 V, VON/OFF = 3.3 V 1A
VDROP = 0.3 V, VIN = 5 V, VON/OFF = 3.3 V 1
Notes:
1. VIN=20V, VON/OFF=8V, VDROP=0.5V, TA=25oC
2.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.
PD(t)=TJ
−TA
RθJA
(t)=TJ−TA
RθJC
+RθCA
(t)=ID
2(t)×RDS(ON)@TJ
Typical RθJA for single device operation using the board layouts shown below on FR-4 PCB in a still air environment:
a. 180oC/W when mounted on a 2oz minimum copper pad.
Scale 1 : 1 on letter size paper
3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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2
2a
Typical Electrical Characteristics (TA = 25 OC unless otherwise noted )
Figure 1. VDROP Versus IL at VIN=12V.Figure 2. VDROP Versus IL at VIN=5.0V.
0 1 2 3 4
0
0.1
0.2
0.3
0.4
0.5
I ,(A)
V , (V)
DROP
L
T = 125°C
J
T = 25°C
J
V = 12V
V = 1.5 - 8V
PW =300us, D≤ 2%
ON/OFF
IN
0 1 2 3 4
0
0.1
0.2
0.3
0.4
0.5
I (A)
V , (V)
DROP
L
V = 5V
V = 1.5 - 8V
PW =300us, D≤ 2%
ON/OFF
IN
T = 25°C
J
T = 125°C
J
V (V)
DROP
1 2 3 4 5
0
0.2
0.4
0.6
0.8
1
V (V)
IN
T = 125°C
J
T = 25°C
J
I = 1A
V = 1.5 - 8V
PW =300us, D≤ 2%
ON/OFF
L
Figure 3. VDROP Versus VIN at IL=1A.
012345
0.15
0.2
0.25
0.3
0.35
0.4
0.45
I , (A)
L
RDS(ON), (Ohm)
T = 125°C
J
T = 25°C
J
I = 1A
V = 5V
PW =300us, D≤ 2%
IN
L
Figure 4. R(ON) Versus IL at VIN=5.0V.
1 2 3 4 5
0
0.2
0.4
0.6
0.8
1
V , (V)
IN
R ,(Ohm)(ON)
T = 125°C
J
T = 25°C
J
I = 1A
V = 1.5 - 8V
PW =300us, D≤ 2%
ON/OFF
L
Figure 5. On Resistance Variation with
Input Voltage.
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Figure 6. Switching Variation with R2 at
Vin=12V and R1=300KOhm.
Figure 7. Switching Variation with R2 at
Vin=5V and R1=300KOhm.
0 20 40 60 80 100
0
100
200
300
400
500
R2 (KOhm)
Time (us)
Vin = 3.3V
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
td(on)
tr
td(off)
tf
0 20 40 60 80 100
0
20
40
60
80
100
120
R2 (KOhm)
% of Current Overshoot
Vin = 12V
5V
3.3V
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
0 20 40 60 80 100
0
100
200
300
400
500
R2 (KOhm)
Time (us)
td(on)
tr
td(off)
tf
Vin = 12V
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
0 20 40 60 80 100
0
100
200
300
400
500
R2 (KOhm)
Time (us)
Vin = 5V
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
td(on)
tr
td(off)
tf
Figure 8. Switching Variation with R2 at
Vin=3.3V and R1=300KOhm.Figure 9. % of Current Overshoot Variation
with Vin and R2.
0 20 40 60 80 100
0
400
800
1,200
1,600
2,000
R2 (KOhm)
Vdrop (mV)
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF Vin = 3.3V
5V
12V
Figure 10. Vdrop Variation with Vin and R2.
Typical Electrical Characteristics (TA = 25 OC unless otherwise noted )
Figure 11. Switching Waveforms.
10%
50%
90%
10%
90%
90%
50%
VIN
VOUT
on off
d(off) fr
d(on)
t t
tt
t
t
INVERTED
10%
PULSE WIDTH
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0.1 0.2 0.5 1 2 5 10 20 30
0.01
0.03
0.1
0.3
1
3
10
V (V)
I , DRAIN CURRENT (A)
DROP
L
100ms
10ms
1s
1ms
R(ON) LIMIT
DC
100us
V = 12V
SINGLE PULSE
R = See Note 2a
T = 25°C
IN
A
θJA
Figure 12. Safe Operating Area.
0.00001 0.0001 0.001 0.01 0.1 1 10 100 300
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t1 2
R (t) = r(t) * R
R = See Note 2a
θJA
θJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t 1 t 2
r(t), NORMALIZED EFFECTIVE
Figure 13. Transient Thermal Response Curve.
Note: Thermal characterization performed on the conditions described in Note
2a. Transient thermal response will change depends on the circuit board
Typical Electrical Characteristics (TA = 25 OC unless otherwise noted )
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FDC6324L Load Switch Application
General Description
This device is particularly suited for computer
peripheral switching applications where 20V
input and 1A output current capability are
needed. This load switch integrates a small
N-Channel Power MOSFET (Q1) which drives a
large P-Channel Power MOSFET (Q2) in one tiny
SuperSOTTM-6 package.
A load switch is usually configured for high side
switching so that the load can be isolated from
the active power source. A P-Channel Power
MOSFET, because it does not require its drive
voltage above the input voltage, is usually more
cost effective than using an N-Channel device in
this particular application. A large P-Channel
Power MOSFET minimizes voltage drop. By
using a small N-Channel device the driving
stage is simplified.
Component Values
R1 Typical 10k - 1MΩ
R2 Typical 0 - 10kΩ (optional)
C1 Typical 1000pF (optional)
Design Notes
R1 is needed to turn off Q2.
R2 can be used to soft start the switch in the case the output capacitance Co is small.
R2 ≤ should be at least 10 times smaller than R1 to guarantee Q1 turns on.
By using R1 and R2 a certain amount of current is lost from the input. This bias current loss is given by
the equation when the switch is ON. IBIAS_LOSS can be minimized by large R1.IBIAS _LOSS =Vin
R1+R2
R2 and CRSS of Q2 make ramp for slow turn on. If excessive overshoot current occurs due to fast turn on,
additional capacitance C1 can be added externally to slow down the turn on.
APPLICATION CIRCUIT
IN OUT
ON/OFF
R1
R2
C1
LOADCo
Q2
Q1
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