DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
1 of 9
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January 2014
© Diodes Incorporated
DMHC4035LSD
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device V(BR)DSS R
DS(ON) max ID max
TA = +25°C
N-Channel 40V 45m @ VGS = 10V 4.5A
58m @ VGS = 4.5V 4A
P-Channel -40V 65m @ VGS = -10V -3.7A
100m @ VGS = -4.5V -2.9A
Description
This new generation complementary MOSFET H-Bridge features low
on-resistance achievable with low gate drive.
Applications
• DC Motor Control
• DC-AC Inverters
Features
• 2 x N + 2 x P channels in a SOIC package
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.074 grams (approximate)
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMHC4035LSD-13 Standard SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View Internal Schematic
Top View
Pin Configuration
SO-8
H-Bridge
P1G
P1S/P2S
N2D/P2D
P2G N2G
N1S/N2S
N1D/P1D
N1G
1
4
8
5
C
4
03
5
L
S
Y
Y W
W
= Manufacturer’s Marking
C4035LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
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© Diodes Incorporated
DMHC4035LSD
NEW PRODUCT
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NEW PRODUCT
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) PD 1.5 W
Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 85
°C/W
t<10s 53
Thermal Resistance, Junction to Case RθJC 15
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Maximum Ratings N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C ID 4.5
3.5 A
t<10s TA = +25°C
TA = +70°C ID 5.8
4.5 A
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C ID 4
3.1 A
t<10s TA = +25°C
TA = +70°C ID 5.1
4 A
Maximum Continuous Body Diode Forward Current (Note 5) IS 1.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 25 A
Maximum Ratings P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -40 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 5) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C ID -3.7
-2.9 A
t<10s TA = +25°C
TA = +70°C ID -4.8
-3.8 A
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C ID -2.9
-2.3 A
t<10s TA = +25°C
TA = +70°C ID -3.9
-3.0 A
Maximum Continuous Body Diode Forward Current (Note 5) IS -1.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -15 A
Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMHC4035LSD
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DMHC4035LSD
NEW PRODUCT
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NEW PRODUCT
Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS — — 1 A VDS = 40V, VGS = 0V
Gate-Source Leakage IGSS — — ±100 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) 1 — 3 V
VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS (ON)
—26 45
m VGS = 10V, ID = 3.9A
—35 58 VGS = 4.5V, ID = 3.5A
Diode Forward Voltage VSD —0.7 1 V
VGS = 0V, IS = 1.25A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss — 574 —
pF VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance Coss —87.8 —
Reverse Transfer Capacitance Crss —38.7 —
Gate resistance Rg —1.6 — VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V) Qg —5.9 —
nC VDS = 20V, ID = 3.9A
Total Gate Charge (VGS = 10V) Qg —12.5 —
Gate-Source Charge Qgs —1.7 —
Gate-Drain Charge Qgd —2.2 —
Turn-On Delay Time tD(on) —3.1 —
ns VDD = 20V, VGS = 10V,
RL = 20, RG = 6,
Turn-On Rise Time tr —2.6 —
Turn-Off Delay Time tD(off) —15 —
Turn-Off Fall Time tf —5.5 —
Reverse Recovery Time trr —6.5 —ns IF = 3.9A, di/dt = 500A/s
Reverse Recovery Charge Qrr —1.2 —nC
Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -40 —— V
VGS = 0V, ID = -250A
Zero Gate Voltage Drain Current IDSS — — -1 A VDS = -40V, VGS = 0V
Gate-Source Leakage IGSS — — ±100 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) -1 — -3 V
VDS = VGS, ID = -250A
Static Drain-Source On-Resistance RDS (ON)
—49 65
m VGS = -10V, ID = -4.2A
—73 100 VGS = -4.5V, ID = -3.3A
Diode Forward Voltage VSD —-0.7 -1.2 V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss —587 —pF VDS = -20V, VGS = 0V,
f = 1MHz
Output Capacitance Coss —88.1 —pF
Reverse Transfer Capacitance Crss —40.2 —pF
Gate resistance Rg —12.3 — VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V) Qg —5.4 —nC
VDS = -20V, ID = -4.2A
Total Gate Charge (VGS = -10V) Qg —11.1 —nC
Gate-Source Charge Qgs —1.5 —nC
Gate-Drain Charge Qgd —2 —nC
Turn-On Delay Time tD(on) —3.6 —ns
VDD = -15V, VGS = -10V,
RG = 6, ID = -1A
Turn-On Rise Time tr —2.9 —ns
Turn-Off Delay Time tD(off) —36.3 —ns
Turn-Off Fall Time tf —15.3 —ns
Reverse Recovery Time trr —15.5 —ns IF = -4.2A, di/dt = 500A/s
Reverse Recovery Charge Qrr —16.9 —nC
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMHC4035LSD
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DMHC4035LSD
NEW PRODUCT
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Typical Characteristics - N-CHANNEL
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
20
012345
18
16
14
12
10
8
6
4
2
0
V= 2.5V
GS
V= 3.0V
GS
V= 4.0V
GS
V= 4.5V
GS
V= 5.0V
GS
V= 2.3V
GS
V= 3.5V
GS
V= 10V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
0 2 4 6 8 10 12 14 16 18 20
V = 4.5V
GS
V = 10V
GS
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
02468101214161820
I = 3.9A
D
I = 3.5A
D
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0 2 4 6 8 101214161820
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
1.8
V=5V
I= 5A
GS
D
V=V
I= 10A
GS
D
10
DMHC4035LSD
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DMHC4035LSD
NEW PRODUCT
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-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
V=5V
I= 5A
GS
D
V=V
I= 10A
GS
D
10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
0.5
1
1.5
2
2.5
I= 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T= 85°C
A
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
T = 125°C
A
T = 150°C
A
T= 25°C
A
T = -55°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (pF)
T
10
100
1000
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
rss
Q(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
0
2
4
6
8
10
02468101214
V = 20V
I= A
DS
D
3.9
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.01
0.1
1
10
100
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = 4.5V
Single Pulse
GS
DUT on 1 * MRP Board
DMHC4035LSD
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NEW PRODUCT
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Typical Characteristics - P-CHANNEL
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 13 Typical Output Characteristics
DS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
15
012345
12
3
0
9
6
V = -2.0V
GS
V= -3.0V
GS
V= -3.5V
GS
V= -10V
GS
V = -5.0V
GS
V = -2.5V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 14 Typical Transfer Characteristics
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0
3
6
9
12
15
012345
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V = -5.0V
DS
-I , DRAIN SOURCE CURRENT (A)
Figure 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0 2 4 6 8 101214161820
V = -4.5V
GS
V = -10V
GS
-V , GATE-SOURCE VOLTAGE (V)
Figure 16 Typical Transfer Characteristics
GS
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 2 4 6 8 101214161820
I = -4.2A
D
I = -3.3A
D
-I , DRAIN SOURCE CURRENT (A)
Figure 17 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0 3 6 9 12 15
T = -55C
A
°
T = 25C
A
°
T = 85C
A
°
T = 125C
A
°
T = 150C
A
°
V = -4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 18 On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
1.8
V = -5V
I = -5A
GS
D
V = -10V
I = -10A
GS
D
DMHC4035LSD
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NEW PRODUCT
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-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 19 On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(on)
Ω
0
0.03
0.06
0.09
0.12
0.15
V= -10V
I= A
GS
D
-10
V=5V
I= A
GS
D
-
-5
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 20 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 21 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
0
3
6
9
12
15
0 0.3 0.6 0.9 1.2 1.5
T= 125C
A
°
T= 150C
A
°
T= 85C
A
°
T= 25C
A
°
T= -55C
A
°
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 22 Typical Junction Capacitance
DS
10
100
1000
0 5 10 15 20 25 30 35 40
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 23 Gate-Charge Characteristics
g
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
0
2
4
6
8
10
024681012
V = -20V
I = -4.2A
DS
D
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 24 SOA, Safe Operation Area
DS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0.01
0.1
1
10
100
T = 150°C
T = 25°C
J(max)
A
V = -4.5V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
DMHC4035LSD
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NEW PRODUCT
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0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 25 Transient Thermal Resistance
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
R (t) = r(t) * R
R = 110°C/W
Duty Cycle, D = t1/ t2
θθ
θ
JA JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SO-8
Dim Min Max
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
θ 0° 8°
All Dimensions in mm
Dimensions Value (in mm)
X 0.60
Y 1.55
C1 5.4
C2 1.27
Gauge Plane
Seating Plane
Detail ‘A’
Detail ‘A’
E
E1
h
L
D
eb
A2
A1
A
45
°
7
°~
9
°
A3
0.254
X
C1
C2
Y
DMHC4035LSD
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DMHC4035LSD
NEW PRODUCT
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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