IRANSYS US1A THRU US1K ELECTRONICS LIMITED SURFACE MOUNT ULTRAFAST RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere FEATURES SMA/DO-214AC For surface mounted app cations USE( 1.40) Low profile package eH Le) | | OSCE LZ) Easy pick and place i Ultrafast recovery times for high efficiency ! ; ; . LS 7(4.04 f Plastic package has Underwriters Laboratory | ina | | bo Built-in strain relief i | . | | Flammability Classification 94V-O ees Glass passivated junction >> WT2E 308) High temperature soldering: 96 2.45) (i\ | 260 J/10 seconds at terminals i 1 | 8300076 ] | L.ooaeanay | e152) i M5023) fesse MECHANICAL DATA ' eT Case: JEDEC DO-214AC molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Standard packaging: 12mm tape (EIA-481) Weight: 0.002 ounce, 0.064 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 J ambient temperature unless otherwise specified. Resistive or inductive load. __ For capacitive load, derate current by 20%. SYMBOLS | US1A | US1B |} US1D | US1G | UStJ | US1IK | UNITS Maximum Recurrent Peak Reverse Voltage Varm 50 100 200 400 600 800 | Volts Maximum RMS Voltage Vams 35 70 140 280 420 560 | Volts Maximum DC Blocking Voltage Voc 50 100 200 400 600 800 | Volts Maximum Average Forward Rectified Current, lav) 1.0 Amps at T.=100 J Peak Forward Surge Current 8.3ms single half sine- lesu 30.0 Amps wave superimposed on rated load(JEDEC method) Ta=55 J Maximum Instantaneous Forward Voltage at 1.0A Ve 1.0 | 1.4 | 1.7 Volts Maximum DC Reverse Current T,=25 J ln 10.0 SGA At Rated DC Blocking Voltage T,=100 J 100 Maximum Reverse Recovery Time (Note 1) Tj=25 J Tar 50.0 | 100.0 ns Typical Junction capacitance (Note 2) Cy 17 pF Maximum Thermal Resistance (Note 3) R KJL 30 cJ/W Operating and Storage Temperature Range Ty, T ste -50 to +150 J NOTES: 1. Reverse Recovery Test Conditions: I-=0.5A, Ip=1.0A, Irr=0.25A 2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts 3. 8.0mm? (.013mm thick) land areasRATING AND CHARACTERISTIC CURVES US1A THRU US1K aor wore Awindiatin Apt reborn a ner is YLT 2avide =fappri) fi HOTE 2 40 4 SNon (QI CSELLOSDosE i Inabinsiee T SOTe t PuLse GE RATOR NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. Source Impedance = 50 Ohms et, +0.5A -1.0 settime Phicmi BASE FOR 50 ns/cm Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM TYPICAL Td =25J IFM, Apk 0 2 4 6 8 1.0 1.2 Fig. 2-FORWARD CHARACTERISTICS TJ =25 J f = 1.0MHz Vsig = 50m Vp-p JUNCTION CAPACITANCE, pF 0.1 1 10 REVERSE VOLTAGE, VOLTS Fig. 4-TYPICAL JUNCTION CAPACITANCE 1.4 100 PEAK FORWARD SURGE CURRENT, AVERAGE FORWARD CURRENT, 20 SINGLE PHASE HALF WAVE | RESISTIVE OR INDUCTIVE = P.C.B MOUNTED ON + 0.315x0.315"(8.0x8.0mm) | PAD AREAS AMPERES \ \ 25 50 75 100 125 150 175 LEAD TEMPERATURE, J Fig. 3-FORWARD CURRENT DERATING CURVE AMPERES N 8.3ms SINGLE HALF SINE WAVE 4 WN JEDEC METHOD MN -~~__] a 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz Fig. 5-PEAK FORWARD SURGE CURRENT