VS-ETU3006S-M3, VS-ETU3006-1-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt(R) FEATURES * Low forward voltage drop * Ultrafast recovery time * 175 C operating junction temperature 2 * Low leakage current 1 * Designed and qualified JEDEC(R)-JESD 47 1 3 D2PAK 2 (TO-263AB) TO-262AA 3 according to * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C Base cathode 2 2 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION N/C Ultralow VF, soft-switching ultrafast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). 3 Anode 1 N/C 3 Anode 1 D2PAK TO-262 The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. PRIMARY CHARACTERISTICS IF(AV) 30 A VR 600 V VF at IF 1.15 V The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. trr (typ.) 30 ns TJ max. 175 C Package D2PAK (TO-263AB), TO-262AA Circuit configuration Single APPLICATIONS AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units, and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 113 C 30 Non-repetitive peak surge current IFSM TC = 25 C 200 Operating junction and storage temperatures TJ, TStg A -65 to +175 C ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 1.4 2.0 IR = 100 A IF = 30 A, TJ = 150 C - 1.15 1.35 VR = VR rated - 0.02 30 TJ = 150 C, VR = VR rated - 30 250 UNITS V Reverse leakage current IR Junction capacitance CT VR = 600 V - 20 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH A Revision: 26-Oct-17 Document Number: 93592 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU3006S-M3, VS-ETU3006-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 30 45 IF = 1 A, dIF/dt = 50 A/s, VR = 30 V Reverse recovery time trr Peak recovery current TJ = 25 C - 45 - TJ = 125 C - 100 - - 5.6 - - 10 - TJ = 25 C IRRM TJ = 125 C IF = 30 A dIF/dt = 200 A/s VR = 200 V UNITS ns A TJ = 25 C - 127 - TJ = 125 C - 580 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 C Thermal resistance, junction-to-case RthJC - 0.95 1.4 C/W Thermal resistance, junction-to-ambient RthJA Typical socket mount - - 70 Thermal resistance, case-to-heatsink RthCS Mounting surface, flat, smooth, and greased - 0.5 - - 2.0 - g - 0.07 - oz. 6 (5) - 12 (10) kgf * cm (lbf * in) Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS Weight Mounting torque Case style D2PAK (TO-263AB) ETU3006S Case style TO-262AA ETU3006-1 1000 1000 100 IR - Reverse Current (A) IF - Instantaneous Forward Current (A) Marking device TJ = 175 C TJ = 150 C 10 TJ = 25 C 1 175C 100 150C 10 125C 100C 1 75C 0.1 50C 25C 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 VFM - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 26-Oct-17 Document Number: 93592 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU3006S-M3, VS-ETU3006-1-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (C/W) 10 D = 0.5 D = 0.2 D = 0.1 1 0.1 D = 0.05 D = 0.02 D = 0.01 0.01 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-0 1E+00 t1 - Rectangular Pulse Duration (s) 60 180 170 Average Power Loss (W) Allowable Case Temperature (C) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics 160 150 140 130 DC 120 110 RMS Limit 50 40 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 30 20 10 100 0 90 0 5 10 15 20 25 30 35 40 45 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 5 10 15 20 25 30 35 40 45 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 26-Oct-17 Document Number: 93592 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU3006S-M3, VS-ETU3006-1-M3 www.vishay.com Vishay Semiconductors 130 120 110 1800 1600 1400 100 IF = 30 A, 125 C 90 Qrr (nC) trr (ns) IF = 30 A, 125 C 1200 80 70 60 IF = 30 A, 25 C 50 1000 800 600 40 IF = 30 A, 25 C 400 30 200 20 typical value typical value 10 100 0 100 1000 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 7 - Typical Reverse Recovery vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 26-Oct-17 Document Number: 93592 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU3006S-M3, VS-ETU3006-1-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E T U 30 06 S 1 2 3 4 5 6 7 TRL -M3 8 9 1 - Vishay Semiconductors product 2 - 3 - Circuit configuration E = single T = TO-220 4 - U = ultrafast recovery time 5 - Current code (30 = 30 A) 6 - Voltage code (06 = 600 V) 7 - * S = D2PAK (TO-263AB) - * -1 = TO-262AA - * None = tube (50 pieces) - * TRL = tape and reel (left oriented, for D2PAK (TO-263AB) package) - * TRR = tape and reel (right oriented, for D2PAK (TO-263AB) package) - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free 8 9 ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY VS-ETU3006S-M3 50 1000 PACKAGING DESCRIPTION Antistatic plastic tube VS-ETU3006-1-M3 50 1000 Antistatic plastic tube VS-ETU3006STRR-M3 800 800 13" diameter reel VS-ETU3006STRL-M3 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information SPICE model D2PAK (TO-263AB) www.vishay.com/doc?96164 TO-262AA www.vishay.com/doc?96165 D2PAK (TO-263AB) www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 D2PAK (TO-263AB) www.vishay.com/doc?95032 www.vishay.com/doc?96438 Revision: 26-Oct-17 Document Number: 93592 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC(R) outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0 to 8 Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC(R) outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-262 DIMENSIONS in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 NOTES A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e L 2.54 BSC 4 4 2 0.100 BSC 13.46 14.10 L1 - L2 3.56 0.530 0.555 1.65 - 0.065 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 Document Number: 95419 Revision: 04-Oct-10 4 (4) (5) (6) 3 Dimension b1 and c1 apply to base metal only Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-ETU3006-1-M3 VS-ETU3006S-M3 VS-ETU3006STRL-M3 VS-ETU3006STRR-M3