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FDMS3500 Trench(R) N-Channel Power tm MOSFET 75V, 49A, 14.5m: Features General Description Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor`s advanced Power Trench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design 100% UIL Tested Application RoHS Compliant DC - DC Conversion Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25C -Continuous (Silicon limited) TC = 25C -Continuous TA = 25C PD TJ, TSTG Units V 20 V 49 57 (Note 1a) 9.2 (Note 3) 384 -Pulsed A 100 Single Pulse Avalanche Energy EAS Ratings 75 Power Dissipation TC = 25C Power Dissipation TA = 25C 96 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 1.3 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking FDMS3500 Device FDMS3500 (c)2009 Fairchild Semiconductor Corporation FDMS3500 Rev.C2 Package Power 56 1 Reel Size 13'' Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMS3500 N-Channel Power Trench(R) MOSFET October 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250PA, referenced to 25C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 60V, 1 PA IGSS Gate to Source Leakage Current VGS = 20V, VDS = 0V 100 nA 3.0 V 75 V 71 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250PA, referenced to 25C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 1.8 -6.8 mV/C VGS = 10V, ID = 11.5A 11.1 VGS = 4.5V, ID = 10A 12.8 16.3 VGS = 10V, ID = 11.5A, TJ = 125C 17.6 23.0 VDD = 5V, ID = 11.5A 14.5 56 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 40V, VGS = 0V, f = 1MHz f = 1MHz 3580 4765 pF 225 300 pF 120 175 pF : 1.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg 16 29 9 18 ns ns 48 77 ns VDD = 40V, ID = 11.5A, VGS = 10V, RGEN = 6: 6 11 ns Total Gate Charge VGS = 0V to 10V 65 91 nC Qg Total Gate Charge VGS = 0V to 5V 34 48 nC Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge VDD = 40V, ID = 11.5A 9.9 nC 11.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 11.5A (Note 2) 0.8 1.3 VGS = 0V, IS = 2.1A (Note 2) 0.7 1.2 IF = 11.5A, di/dt = 100A/Ps V 38 60 ns 45 72 nC NOTES: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. b. 125C/W when mounted on a minimum pad of 2 oz copper. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. 3. Starting TJ = 25C, L = 3mH, IAS = 16A, VDD = 75V, VGS = 10V (c)2009 Fairchild Semiconductor Corporation FDMS3500 Rev.C2 2 www.fairchildsemi.com FDMS3500 N-Channel Power Trench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 3.0 VGS = 10V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 VGS = 4V ID, DRAIN CURRENT (A) 80 VGS = 3.5V VGS = 4.5V 60 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 40 VGS = 3V 20 0 0 1 2 2.5 VGS = 3.5V 2.0 VGS = 4V 1.5 1.0 0.5 3 0 20 40 60 80 100 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 40 ID = 11.5A VGS = 10V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 4.5V VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 11.5A PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 30 TJ = 125oC 20 10 TJ = 25oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 100 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 80 ID, DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX VGS = 3V VDS = 5V 60 TJ = 150oC 40 TJ = 25oC 20 TJ = -55oC 0 0 1 2 3 4 VGS = 0V 10 TJ = 150oC 1 TJ = 25oC TJ = -55oC 0.1 0.01 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2009 Fairchild Semiconductor Corporation FDMS3500 Rev.C2 3 1.2 www.fairchildsemi.com FDMS3500 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10000 ID = 11.5A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 40V 6 VDD = 30V VDD = 50V 4 Ciss 1000 Coss 100 2 30 0.1 0 0 10 20 30 40 50 60 70 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 60 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 75 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 TJ = 25oC TJ = 125oC 50 40 VGS = 10V Limited by Package 30 VGS = 4.5V 20 10 o RTJC = 1.3 C/W 1 0.01 0.1 1 10 100 0 25 400 50 tAV, TIME IN AVALANCHE(ms) 100 125 150 o Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 400 THIS AREA IS LIMITED BY rDS(on) 10 P(PK), PEAK TRANSIENT POWER (W) 100 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss f = 1MHz VGS = 0V 1ms 10ms 1 0.1 0.01 0.01 100ms SINGLE PULSE TJ = MAX RATED RTJA = 125oC/W 1s TA = 25oC 10s DC 0.1 1 10 100 300 SINGLE PULSE RTJA = 125oC/W TA = 25oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area (c)2009 Fairchild Semiconductor Corporation FDMS3500 Rev.C2 VGS = 10V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS3500 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA o RTJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDMS3500 Rev.C2 5 www.fairchildsemi.com FDMS3500 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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