2N3798 2N3798A
2N3799 2N3799A
SILICON
PNP TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3798, 2N3799
series devices are silicon PNP epitaxial planar transistors
designed for low noise amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) 2N3798 2N3798A
SYMBOL 2N3799 2N3799A UNITS
Collector-Base Voltage VCBO 60 90 V
Collector-Emitter Voltage VCEO 60 90 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 50 mA
Power Dissipation PD 360 mW
Power Dissipation (TC=25°C) PD 1.2 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JA 0.49 °C/mW
Thermal Resistance JC 150 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=50V 10 nA
ICBO V
CB=50V, TA=150°C 10 A
IEBO V
EB=4.0V 20 nA
BVCBO I
C=10µA (2N3798, 2N3799) 60 V
BVCBO I
C=10µA (2N3798A, 2N3799A) 90 V
BVCEO I
C=10mA (2N3798, 2N3799) 60 V
BVCEO I
C=10mA (2N3798A, 2N3799A) 90 V
BVEBO I
E=10µA 5.0 V
VCE(SAT) I
C=100µA, IB=10µA 0.20 V
VCE(SAT) I
C=1.0mA, IB=100µA 0.25 V
VBE(SAT) I
C=100µA, IB=10µA 0.70 V
VBE(SAT) I
C=1.0mA, IB=100µA 0.80 V
VBE(ON) V
CE=5.0V, IC=100A 0.70 V
2N3798 2N3799
2N3798A 2N3799A
MIN MAX MIN MAX
hFE V
CE=5.0V, IC=1.0A - - 75 -
hFE V
CE=5.0V, IC=10A 100 - 225 -
hFE V
CE=5.0V, IC=100A 150 - 300 -
hFE V
CE=5.0V, IC=100A, TA=-55°C 75 - 150 -
hFE V
CE=5.0V, IC=500A 150 450 300 900
hFE V
CE=5.0V, IC=1.0mA 150 - 300 -
hFE V
CE=5.0V, IC=10mA 125 - 250 -
TO-18 CASE
R1 (22-September 2014)
www.centralsemi.com