SURFACE MOUNT GLASS PASSIVATED
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
FEATURES
* Fast switching
* Glass passivated device
* ldeal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.015 gram
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwis e specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS
(At TA = 25oC unless otherwise noted)
ESM101
THRU
ESM106
MELF
MAXIMUM RATINGS
(At TA = 25oC unless otherwise noted)
SUPER FAST SILICON RECTIFIER
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
2001-4
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
A
= 55
o
C
Peak Forward Surge Current, I
FM
(surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps1.0
30
15 -65 to + 175
Amps
pF
0
C
UNITS
ESM101 ESM104
ESM102 ESM105 ESM106ESM103
50 200
100 300 400150
35 140
70 210 280105
50 200100 300 400150
10
at Rated DC Blocking Voltage
CHARACTERISTICS
Maximum Reverse Recovery Time (Note 1)
V
F
SYMBOL
I
R
trr
UNITS
0.95 5.0 uAmps
nSec
Maximum DC Reverse Current
Maximum Forward Voltage at 1.0A DC Volts
@T
A
= 25
o
C
@T
A
=125
o
C
ESM101 ESM104ESM102 ESM105 ESM106ESM103 1.25
100
35
MECHANICAL DA TA
.095 (2.4)
.106 (2.7)
.028 (.60)
.018 (.46)
.190 (4.8)
.205 (5.2)
SOLDERABLE
ENDS