BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES * Package type: leaded * Package form: T-13/4 * Dimensions (in mm): O 5 * Radiant sensitive area (in mm2): 0.78 * Leads with stand-off * High radiant sensitivity * Daylight blocking filter matched with 870 nm to 950 nm emitters 16140-1 * High bandwidth: > 100 MHz at VR = 12 V * Fast response times * Angle of half sensitivity: = 20 DESCRIPTION * Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC BPV10NF is a PIN photodiode with high speed and high radiant sensitivity in black, T-13/4 plastic package with daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters. APPLICATIONS * High speed detector for infrared radiation * Infrared remote control and free air data transmission systems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY COMPONENT Ira (A) (deg) 0.5 (nm) 60 20 790 to 1050 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-13/4 BPV10NF Note * Test condition see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE BPV10NF Note * MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb 25 C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.8, 22-Nov-11 SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 C Tamb - 40 to + 100 C C Tstg - 40 to + 100 t 5 s, 2 mm from body Tsd 260 C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Document Number: 81503 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV10NF www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 A, E = 0 V(BR) VR = 20 V, E = 0 Iro Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Short circuit current Reverse light current TYP. MAX. UNIT 1.0 1.3 V 1 5 nA 60 V VR = 0 V, f = 1 MHz, E = 0 CD 11 pF Ee = 1 mW/cm2, = 870 nm VO 450 mV Ee = 1 mW/cm2, = 870 nm IK 50 A Ee = 1 mW/cm2, = 870 nm, VR = 5 V Ira 55 A Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ira 60 A - 0.1 %/K s() 0.55 A/W 20 deg Ee = 1 Temperature coefficient of Ira MIN. = 870 nm, VR = 5 V mW/cm2, VR = 5 V, = 870 nm Absolute spectral sensitivity Angle of half sensitivity 30 TKIra Wavelength of peak sensitivity p 940 nm Range of spectral bandwidth 0.5 790 to 1050 nm = 950 nm 70 % VR = 20 V, = 950 nm NEP 3 x 10-14 W/Hz Quantum efficiency Noise equivalent power Detectivity VR = 20 V, = 950 nm D* 3 x 1012 cmHz/W Rise time VR = 50 V, RL = 50 , = 820 nm tr 2.5 ns Fall time VR = 50 V, RL = 50 , = 820 nm tf 2.5 ns BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 1.4 Ira rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 20 V 1 1.2 1.0 VR = 5 V Ee =1 mW/cm2 = 870 nm 0.8 0.6 20 94 8436 40 60 80 100 Tamb - Ambient Temperature (C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.8, 22-Nov-11 0 94 8621 20 40 60 80 100 Tamb - Ambient Temperature (C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81503 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV10NF www.vishay.com Vishay Semiconductors 1.2 S()rel - Relative Spectral Sensivity Ira - Reverse Light Current (A) 1000 100 10 VR = 5 V = 870 nm 1 0.1 0.01 0.1 0.6 0.4 0.2 850 Fig. 3 - Reverse Light Current vs. Irradiance 950 1050 1150 - Wavelength (nm) 94 8426 Ee - Irradiance (mW/cm) 94 8622 0.8 0.0 750 10 1 1.0 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0 100 10 20 30 0.5 mW/cm2 = 870 nm 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 40 1.0 0.9 50 0.8 60 70 0.7 80 2 1 0.1 0.02 mW/cm 94 8623 1 - Angular Displacement Srel - Relative Sensitivity Ira - Reverse Light Current (A) 1 mW/cm2 100 10 0.6 0.4 0.2 0 94 8624 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 12 10 E=0 f = 1 MHz 8 6 4 2 0 0.1 94 8439 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.8, 22-Nov-11 Document Number: 81503 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV10NF www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Drawing-No.: 6.544-5185.01-4 96 12198 Rev. 1.8, 22-Nov-11 Document Number: 81503 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000