BPV10NF
www.vishay.com Vishay Semiconductors
Rev. 1.8, 22-Nov-11 1Document Number: 81503
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
BPV10NF is a PIN photodiode with high speed and high
radiant sensitivity in black, T-1¾ plastic package with
daylight blocking filter. Filter bandwidth is matched with
870 nm to 950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Radiant sensitive area (in mm2): 0.78
• Leads with stand-off
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to 950 nm
emitters
• High bandwidth: > 100 MHz at VR = 12 V
• Fast response times
• Angle of half sensitivity: ϕ = ± 20°
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
16140-1
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm)
BPV10NF 60 ± 20 790 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPV10NF Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR60 V
Power dissipation Tamb ≤ 25 °C PV215 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 R
thJA 350 K/W
BPV10NF
www.vishay.com Vishay Semiconductors
Rev. 1.8, 22-Nov-11 2Document Number: 81503
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF1.0 1.3 V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 V
Reverse dark current VR = 20 V, E = 0 Iro 15nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD11 pF
Open circuit voltage Ee = 1 mW/cm2, λ = 870 nm VO450 mV
Short circuit current Ee = 1 mW/cm2, λ = 870 nm IK50 μA
Reverse light current
Ee = 1 mW/cm2, λ = 870 nm,
VR = 5 V Ira 55 μA
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V Ira 30 60 μA
Temperature coefficient of Ira Ee = 1 mW/cm2, λ = 870 nm,
VR = 5 V TKIra - 0.1 %/K
Absolute spectral sensitivity VR = 5 V, λ = 870 nm s(λ)0.55A/W
Angle of half sensitivity ϕ± 20 deg
Wavelength of peak sensitivity λp940 nm
Range of spectral bandwidth λ0.5 790 to 1050 nm
Quantum efficiency λ = 950 nm η70 %
Noise equivalent power VR = 20 V, λ = 950 nm NEP 3 x 10-14 W/√Hz
Detectivity VR = 20 V, λ = 950 nm D* 3 x 1012 cm√Hz/W
Rise time VR = 50 V, RL = 50 Ω, λ = 820 nm tr2.5 ns
Fall time VR = 50 V, RL = 50 Ω, λ = 820 nm tf2.5 ns
20 40 60 80
1
10
100
1000
Iro - Reverse Dark Current (nA)
Tamb - Ambient Temperature (°C)
100
94 8436
VR = 20 V
0 20406080
0.6
0.8
1.0
1.2
1.4
I
ra rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
100
94 8621
V
R
= 5 V
E
e
=1 mW/cm
2
λ
= 870 nm
BPV10NF
www.vishay.com Vishay Semiconductors
Rev. 1.8, 22-Nov-11 3Document Number: 81503
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm²)
10
94 8622
V
R
= 5 V
= 870 nm
λ
0.1 1 10
1
10
100
V
R
- Reverse Voltage (V)
100
94 8623
I
ra
- Reverse Light Current (µA)
1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
λ
= 870 nm
0
2
4
6
8
12
10
0.1 1 10
CD - Diode Capacitance (pF)
VR - Reverse Voltage (V)
100
94 8439
E = 0
f = 1 MHz
94 8426
S(λ)rel - Relative Spectral Sensivity
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750 850 950 1050 1150
λ - Wavelength (nm)
0.4 0.2 0
S - Relative Sensitivity
rel
94 8624
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
BPV10NF
www.vishay.com Vishay Semiconductors
Rev. 1.8, 22-Nov-11 4Document Number: 81503
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
96 12198
Drawing-No.: 6.544-5185.01-4
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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