2N5320 2N5321 2N5322 2N5323 NPN PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series types are complementary silicon power transistors manufactured by the epitaxial planar process, designed for amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEV VCEO VEBO IC IB PD TJ, Tstg JA JC 2N5320 2N5322 100 100 75 6.0 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) 2N5320 2N5322 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=80V 0.5 ICBO VCB=60V IEBO VEB=5.0V 0.1 IEBO VEB=4.0V BVCEV IC=100A, VBE=1.5V 100 BVCEO IC=10mA 75 BVEBO IE=100A 6.0 VCE(SAT) IC=500mA, IB=50mA (2N5320) 0.5 VCE(SAT) IC=500mA, IB=50mA (2N5321) 0.7 VCE(SAT) IC=500mA, IB=50mA (2N5322) VCE(SAT) IC=500mA, IB=50mA (2N5323) VBE(ON) VCE=4.0V, IC=500mA 1.1 hFE VCE=4.0V, IC=500mA 30 150 hFE VCE=2.0V, IC=1.0A 10 fT VCE=4.0V, IC=50mA, f=10MHz 50 - 2N5321 2N5323 75 75 50 5.0 2.0 1.0 10 -65 to +200 175 17.5 2N5321 2N5323 MIN MAX 5.0 0.5 75 50 5.0 0.8 1.2 1.4 40 250 50 - UNITS V V V V A A W C C/W C/W UNITS A A A A V V V V V V V V MHz R4 (11-June 2012) 2N5320 2N5321 2N5322 2N5323 NPN PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS ELECTRICAL SYMBOL ton ton toff toff CHARACTERISTICS TEST CONDITIONS VCC=30V, IC=500mA, VCC=30V, IC=500mA, VCC=30V, IC=500mA, VCC=30V, IC=500mA, Continued: (TC=25C unless otherwise noted) IB1=50mA (2N5320, 2N5321) IB1=50mA (2N5322, 2N5323) IB1=IB2=50mA (2N5320, 2N5321) IB1=IB2=50mA (2N5322, 2N5323) MAX 80 100 800 1.0 UNITS ns ns ns s TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R4 (11-June 2012) w w w. c e n t r a l s e m i . c o m