AAMOSPEC NPN POWER TRANSISTOR These devices are high voltage,high speed transistors for hor- izontal deflection output stages of TV"s and CTV's. circuits. FEATURES: * Collector-Emitter Sustaining Voltage - Voegy = 330 V (Min.) - BU407D = 400 V (Min.) - BU406D,BU408D * Low Saturation Voltage Ve sat)! .OV(Max) @1,=5.0A * Fast Switching Speed: tf=0.75 us (Max). MAXIMUM RATINGS NPN BU406D BU407D BU408D 7 AMPERE POWER TRANSISTORS 150-200 VOLTS 60 WATTS H eC : | a aie F 7 if Hote Characteristic Symbol BuU406D BU407D Unit BuU408D Collector-Emitter Voltage Veeo 200 150 Vv Collector-Emitter Voltage Veev 400 330 Vv Collector-Bse Voltage Vepo 400 330 Vv Emitter-Base Voltage Veso 6.0 Vv Collector Current - Continuous le 7.0 A - Peak 10 Base Current - Continuous lp 4.0 A Total Power Dissipation @T,=25C Py 60 Ww Derate above 25C 0.48 wrc Operating and Storage Junction Ty .Ts1 C Temperature Range - 65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rojec 2.08 CAN FIGURE -1 POWER DERATING 70 E 60 = 50 $ 40 s & 30 a 20 10 0 0 23 50 PB 100 125 150 Tc , TEMPERATURE(C) PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 14.68 | 15.31 B 9.78 | 10.42 Cc 5.01 6.52 D 13.06 | 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 | 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 oO 3.70 3.90BU406D, BU407D,BU408D NPN a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Vceoisus) V (1, = 100 mA, |, = 0) BU406D,BU408D 200 BU407D 150 Collector Cutoff Current leev mA (Vog = 400 V, Vee= -1.5V ) BU406D,BU408D 15 ( Veg = 330 V, Vag= -1.5V ) BU407D 18 Emitter Cutoff Current leso mA ( Ven= 6.0V,1, =0) 400 ON CHARACTERISTICS (1) DC Current Gain hFE (Ig =2.0A, Veg =5.0V) 15(typ) Collector - Emitter Saturation Voltage Vee{sat) Vv (Il, =5.0 A, Ip = 0.65 A) BU406D,BU407D 1.0 (Ig =6.0A, I, = 1.2 A) BU408D 1.0 Base - Emitter Saturation Voltage VaE(sat) Vv (l_ =5.0A, I, = 0.65 A) BU406D,BU407D 1.3 (1, =6.0A, lp =1.2A) BU408D 15 Diode Forward Voltage Ve V (1; =5.0A, ) 1.5 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product fy MHz (Ig =O.5A, Voge = 10 V, f = 1.0 MHz) 10 SWITCHING CHARACTERISTICS Fall Time ty us (Veg=40 V, 1,=5.0 A, Ip gng=0-65 A, ) BU406D,BU407D 0.75 (Vee=40 V, 1-=6.0 A, Ip ena=1-2 A, ) BU408D 0.5 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0%BU406D,BU407D,BU408D NPN DC CURRENT GAIN COLLECTOR SATURATION REGION hre , DC CURRENT GAIN Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) 03 05 1 2 5 10 0 0.4 08 1.2 16 20 24 28 Ic, COLLECTOR CURRENT (AMP) ls, BASE CURRENT (AMP) BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE Vee ,BASE- EMITTER VOLTAGE (VOLTS) Ver ,COLLECTOR- EMITTER VOLTAGE (VOLTS) 05 1 2 5 10 a ' 2 go k., COLLECTOR CURRENT (AMP) lc, COLLECTOR CURRENT (AMP)