2003. 6. 16 1/5
SEMICONDUCTOR
TECHNICAL DATA
KTN2222/A
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Low Leakage Current
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
·Low Saturation Voltage
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
·Complementary to the KTN2907/2907A.
·KTN2222/2222A Electrically Similar to 2N2222/2222A.
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL
RATING
UNIT
KTN2222 KTN2222A
Collector-Base Voltage VCBO 60 75 V
Collector-Emitter Voltage VCEO 30 40 V
Emitter-Base Voltage VEBO 5 6 V
Collector Current IC600 mA
Collector Power Dissipation
(Ta=25℃)PC625 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
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KTN2222/A
Revision No : 2
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current KTN2222A ICEX VCE=60V, VEB(OFF)=3V - - 10 nA
Collector Cut-off Current
KTN2222 ICBO
VCB=50V, IE=0 - - 0.01 μA
KTN2222A VCB=60V, IE=0 - - 0.01
Emitter Cut-off Current KTN2222A IEBO VEB=3V, IC=0 - - 10 nA
Collector-Base
Breakdown Voltage
KTN2222
V(BR)CBO IC=10μA, IE=0
60 - -
V
KTN2222A 75 - -
Collector-Emitter *
Breakdown Voltage
KTN2222 V(BR)CEO IE=10mA, IB=0 30 - -
V
KTN2222A 40 - -
Emitter-Base
Breakdown Voltage
KTN2222 V(BR)EBO IE=10μA, IC=0
5 - -
V
KTN2222A 6 - -
DC Current Gain *
KTN2222
KTN2222A
hFE(1) IC=0.1mA, VCE=10V 35 - -
hFE(2) IC=1mA, VCE=10V 50 - -
hFE(3) IC=10mA, VCE=10V 75 - -
hFE(4) IC=150mA, VCE=10V 100 - 300
KTN2222 hFE(5) IC=500mA, VCE=10V 30 - -
KTN2222A 40 - -
Collector-Emitter *
Saturation Voltage
KTN2222 VCE(sat)1 IC=150mA, IB=15mA -- 0.4
V
KTN2222A - - 0.3
KTN2222 VCE(sat)2 IC=500mA, IB=50mA - - 1.6
KTN2222A - - 1
Base-Emitter *
Saturation Voltage
KTN2222 VBE(sat)1 IC=150mA, IB=15mA - - 1.3
V
KTN2222A 0.6 - 1.2
KTN2222 VBE(sat)2 IC=500mA, IB=50mA - - 2.6
KTN2222A - - 2.0
Transition Frequency
KTN2222 fTIC=20mA, VCE=20V, f=100MHz 250 - -
MHz
KTN2222A 300 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz -- 8 pF
Input Capacitance
KTN2222
Cib VEB=0.5V, IC=0, f=1.0MHz
- - 30
pF
KTN2222A - - 25
ELECTRICAL CHARACTERISTICS (Ta=25℃)
* Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.
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KTN2222/A
Revision No : 2
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Impedance KTN2222A hie
IC=1mA, VCE=10V, f=1kHz 2 - 8
kΩ
IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25
Voltage Feedback Ratio KTN2222A hre
IC=1mA, VCE=10V, f=1kHz - - 8
x10-4
IC=10mA, VCE=10V, f=1kHz - - 4
Small-Singal Current Gain KTN2222A hfe
IC=1mA, VCE=10V, f=1kHz 50 - 300
IC=10mA, VCE=10V, f=1kHz 75 - 375
Collector Output Admittance KTN2222A hoe
IC=1mA, VCE=10V, f=1kHz 5 - 35
IC=10mA, VCE=10V, f=1kHz 25 - 200
Collector-Base Time Constant KTN2222A Cc·rbb' IE=20mA, VCB=20V, f=31.8MHz - - 150 pS
Noise Figure KTN2222A NF IC=100μA, VCE=10V,
Rg=1kΩ, f=1kHz - - 4 dB
Switching Time
Delay Time tdVCC=30V, VBE(OFF)=0.5V
IC=150mA, IB1=15mA
- - 10
nS
Rise Time tr- - 25
Storage Time tstg VCC=30V, IC=150mA
IB1=-IB2=15mA
- - 225
Fall Time tf- - 60
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Ω
μ
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KTN2222/A
Revision No : 2
COLLECTOR CURRENT IC (mA)
10
DC CURRENT GAIN hFE
10.5
COLLECTOR CURRENT IC (mA)
0
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC - VCE hFE - IC
TRANSITION FREQUENCY fT (MHz)
COLLECTOR CURRENT IC (mA)
fT - IC
0.4 0.8 1.2 1.6
200
400
600
800
30
50
100
300
500
1K V =10V
CE
10
1
100
10 100 1k 3k
Ta=25 C
V =10V
1000
CE
COMMON EMITTER
Ta=25 C
1.8
1000
I =2mA
B
3 10 30 100 300 1
K
Ta=-25 C
Ta=25 C
Ta=75 C
1000.5 1
0.6
0.4
0.2
0
COLLECTOR-EMITTER SATURATION
10330
VCE(sat) - IC
1k300
I /I =10
C
VOLTAGE VCE(sat) (V)
COLLECTOR CURRENT IC (mA)
V
CE(sat)
COMMON EMITTER
B
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
COLLECTOR CURRENT IC (mA)
3
0.2
0.5 1
0
10 30 100 1k300
0.4
I /I =10
COMMON EMITTER
VBE(sat) - IC
CB
0.6
0.8
1.0
1.2
1.4
1.6
VBE(sat)
Ta=-25 C
Ta=25 C
Ta=75 C
COLLECTOR CURRENT IC (mA)
0.2
0.05
BASE-EMITTER VOLTAGE VBE (V)
0.3 0.4 0.5 0.6
0.1
0.3
1
3
10
30
100
300
500
0.7 0.8 0.9 1.0
IC - VBE
Ta=75 C
Ta=25 C
Ta=-25 C
COMMON EMITTER
V =10V
CE
6mA
4mA
8mA
10mA
12mA
14mA
16mA
18mA
20mA
V =1V
CE
V =2V
CE
Ta=25 C
30
300
330300
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KTN2222/A
Revision No : 2
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
COLLECTOR-BASE VOLTAGE VCB (V)
Cob - VCB
1.0
0.1
10
1.0 10 100 300
COMMON EMITTER
Ta=25 C
100
EMITTER-BASE VOLTAGE VEB (V)
COLLECTOR INPUT CAPACITANCE Cib (pF)
3.0
30
Cib
Cob
f=1MHz,
Cib - VEB
COLLECTOR POWER DISSIPATION
0
0
Pc - Ta
PC (mW)
25 50 75 100 125 150 175
100
200
300
400
500
600
700
AMBIENT TEMPERATURE Ta ( C)
