SHARP ELEK/ MELEC DIV LSE of 6140798 00024364 -4 PU4NZ9V/PC4AN30V Photocouplers T-41-83 PC4N29V/PC4N30V PCANS2V/ PC4N33V Lead forming type (I type) is also available. (PC4N29VI/PCAN30VI/PC4N32VI/ PC4N33VI) (Page 482) HB Outline Dimensions @ Features 1. High current transfer ratio PC4N29V, PC4N30V (CTR: MIN. 100% at Ir-=1l0mA, Veg= 10V) PCA4N32V, PC4N33V (CTR: MIN. 500% at I1-=10mA, Ver= 10V) 2. Response time ton: MAX. 5us at Ip= 200mA, Vec=10V, Ice =50mA 3. UL recognized, file No. E64380 TUV approved, PC4N29V/32V : No. R40184, PC4N30V/33V : No. R40185 Applications I/O interfaces for computers we my System appliances, measuring instruments Signal transmission between circuits of different potentials and impedances FoFeainen a ee WN senpouny High Transfer Efficiency, Gen- eral Purpose Type Photocoup- ler (Unit : mm) Model No. Internal connection 7.124 2.54 @ Anode @ Cathode Collector @ NC i 1.2 diagram ah i ot @ Anode mark PCANIILIY zt | t * pH D @8 @ Emitter @ Base M@ Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Forward current I; 80 mA *'Peak forward current Tem 3 A Input Reverse voltage Ve 6 Vv Power dissipation P 150 mW Collector-emitter voltage} Vego 30 Vv Emitter-collector voltage | Veco 5 Vv Output Collector-base voltage Veso 30 Vv | Collector current I 100 mA Collector power dissipation P, 150 mW Total power dissipation Prot 250 mW *2 Isolation PCAN29V,32V 2,500 voltage PCANgOV,3av] 1,500 | ms Operating temperature Toor 55~+4100} C Storage temperature Tote 55~+150] C *8Soldering temperature Tso1 260 Cc #1 Pulse widthSiys, Duty ratio=0.001 *2 RH=40~60%, AC for 1 minute *3 > For 10 seconds SHARP 262SHARP ELEK/ MELEC DIV 1S5E of 4140798 000283? off Photocouplers PC4N29V/PC4N30V/PC4N32V/PC4N33V M Electro-optical Characteristics T-41-83 (Ta=25C) Parameter Symbol Conditions MIN. | TYP. | MAX. | Unit. Forward voltage Ve I;=l0mA _ 12 15 Vv Input | Reverse current I, Vau=4V _ _ 10 BA Terminal capacitance Cc, V=0, f=1kHz _ 50 _ pF Collector dark current Teeo Vee =10V, I1-=0 _ _ 10-7 A Output Collector-emitter breakdown voltage BV ceo | 1-=0.1mA, I; =0 30 _- _ Vv pu Emitter-collector breakdown voltage BVeco | le=1l0uA, Ip =0 5 _ _ Vv Collector-base breakdown voltage | BVcso | [c=0,lmA, Ir=0 30 _ _ Vv ,_ {PC4N29V,30V Ip=1l0mA, Vce=10V 100 _ _ Current transfer ratio PCANG2V 33V CTR Pulse tat input pulse width= | 599 = % Transfer |_Collector-emitter saturation voltage Veermay | Ip=8mA, l-=2mA _ _ 1.0 Vv charac- Isolation resistance Riso DC500V, RH=40~60% | 5x10 |} 10" _ Qa teristics | Floating capacitance Cy V=0, f=I1MHz _ 1.0 _ pF Response time (Turn-on time) ton 1;=200mA = _ 5 BS Response time PC4N29V,30V t (tw 1.0ms) _ _ 40 uS (Turn-off time) PC4N32V,33V| | Vee =10V, Ie =50mA - = 100 | us Fig. 1 Forward Current vs. Fig. 2 Collector Power Dissipation vs. Ambient Temperature Ambient Temperature 100 g 200 & =< 80 oy & 150 2 3 a 5 8 100 N co 5 40 - \ ke wo & 20 7m \ 2 3 0 3 0 55 -25 O 25 50 75 100 125 oO 55 -25 O 25 50 75 100 125 Ambient temperature Ta (C) Ambient temperature Ta (C)} Fig. 3. Forward Current vs. Fig. 4 Current Transfer Ratio vs. Forward Voltage Forward Current (PC4N29V, PC4N30V) 500 400 Veg =10V 4 200 xs Ta=25C = 100 a 300 = 0 o r=) 5 o $ g GG - 8 20 & 200 > s WW s 2 5 5 3 100 2 3 1 0 0 0.5 15 3.0 0.1 0.2 1 2 5 10 20 50 100 Forward voltage Vr (V) Forward current I, (mA) SHARP 263SHARP ELEK/ MELEC DIV Photocouplers Fi Current transfer ratio CTR (9%) Fig. Collector current I, (mA) = ga Collector-emitter saturation voltage Versay (V) co os mH g. T-41-83 5 Current Transfer Ratio vs. Forward Current (PC4N32V, PC4N33V) Vce=10V Ta=25C 1 1200 1000 800 600 400 200 01 2 10 20 50 100 Forward current I; (mA) 7 Collector Current vs. Collector-emitter Voltage (PC4N32V, PC4N33V) Ta=25C 70 60 50 40 30 20 10 % 2 4 6 8 0 12 14 Collector-emifter voltage Vce (V) . 9 Collector-emitter Saturation Voltage vs. Ambient Temperature 1.2 Ir=8mA Ic=2mA eS fe eerie Ss & S&S | an a 2s6 0 2 50 7 100 Ambient temperature Ta (C) 264 SHARP use o Fj 8180798 O002838 2 PCA4N29V/PC4N30V/PC4N32V/PC4N33V Fig. Collector current I, (mA) Fig. Relative current transfer ratio (%) 6 Collector Current vs. Collector-emitter Voltage (PC4N29V, PC4N30V) 70 Pc { Ta=25C 60 Ir= 50 40 30 10 0% 2 4 6 8 10 12 1 Collector-emitter voltage Vce (V) 8 Relative Current Transfer Ratio vs. Ambient Temperature 150 =10mA Vcr=l0V 100 50 0 -55 25 0 2 50 7 100 Ambient temperature Ta (C) Fig. 10 Collector Dark Current vs. Collector dark current Icro (A) Ambient Temperature 10S (eS 10 Cee 7 + 17? === Ambient temperature Ta (C)SHARP ELEK/ MELEC DIV Photocouplers LSE of 81802798 0002839 4 PC4N29V/PC4N30V/PC Fig. 11 Frequency Response Voltage gain Ay (dB) =! ge Collector-emitter saturation voltage Veiner (Vv) (PC4N29V, PC4N 30V) Forward Current (PC4N29V, PC4N30V) << & 0 5 @ | Ta=25c a 10 15 Forward current Ip (mA) Test Circuit for Response Time TT] Vce=2V Ic=10mA Ta=25 om A ATTN N NUT N sl h NIN RL= i a\| COON \100 10 \ 15 I 4 \ 05 1 2 #5 10 20 50 100200 500 Frequency f (kHz) . 13 Collector-emitter Saturation Voltage vs. Fig. 12 Frequency Response (PC4N32V, PC4N33V) Voltage gain Ay (dB) 20 5 Vce=2V, Ic=10mA Ta=25C 05 L 2 5 10 20 50 100200 500 Frequency f (kHz) B vrecanaov T-41-83 Fig. 14 Collector-emitter Saturation Voltage vs. Forward Current (PC4N32V, PC4N33V) Collector-emitter saturation voltage Ve E(say (V) Tp=200mA Yee FL 209 (tw=1ms) 2p, Input_f5757--150% . ov InputeY Output Output 10% Vee as hoy 10% eo 90% ta ts rt. tr SHARP 7 =25C slelelcle Ta & SEE ll aN 5P8 | \ \ 1 a 7] 3 4 5 6 7 8 Forward current Ip (mA) Test Circuit for Frequency Response Rp Vec }. Output erg e 265