BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary Features and Benefits BVDSS RDS(ON) ID TA = +25C 100V 6.0 @ VGS = 10V 0.17A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) The BSS123Q is suitable for automotive applications requiring specific change control; these parts are AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as: Small Servo Motor Control Power MOSFET Gate Drivers Switching Applications Mechanical Data Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) D SOT23 D G G S Top View S Top View Equivalent Circuit Ordering Information (Note 4) Part Number BSS123-7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial Automotive Automotive Case SOT23 SOT23 SOT23 Packaging 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information K23 = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: C = 2015) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D BSS123 Document number: DS30366 Rev. 21 - 2 1 of 7 www.diodes.com October 2019 (c) Diodes Incorporated BSS123 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Continuous Pulsed ADVANCE INFORMATION Continuous Drain Current (Note 5) VGS = 10V Symbol VDSS VGSS ID IDM Value 100 20 170 680 Unit V V Symbol PD RJA TJ, TSTG Max 300 417 -55 to +150 Unit mW C/W C mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25C (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS 100 - - 0.1 V A Zero Gate Voltage Drain Current IDSS - - 30 A Gate-Source Leakage , Forward ON CHARACTERISTICS (Note 6) Gate Threshold Voltage IGSSF - - 10 50 nA nA VGS(TH) RDS(ON) gFS VSD 1.4 370 0.84 2.0 6.0 10 1.3 V Static Drain-Source On-Resistance 0.8 80 - Ciss Coss Crss - 22 3.5 2.0 tD(ON) tR tD(OFF) tF - - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Test Condition VGS = 0V, ID = 250A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V @ TA = +150C (Note 7) VDS = 20V, VGS = 0V VGS = 20V, VDS = 0V ms V VDS = VGS, ID = 1mA VGS = 10V, ID = 0.17A VGS = 4.5V, ID = 0.17A VDS =10V, ID = 0.17A, f = 1.0KHz VGS = 0V, IS = 0.34A 60 15 6 pF VDS = 25V, VGS = 0V, f = 1.0MHz 8 8 13 16 ns ns ns ns VGS = 10V, VDD = 30V, ID = 0.28A, RGEN = 50 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. BSS123 Document number: DS30366 Rev. 21 - 2 2 of 7 www.diodes.com October 2019 (c) Diodes Incorporated BSS123 0.3 0.5 0.25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS=5.0V VGS = 6.0V VGS = 10.0V 0.4 0.3 VGS = 3.0V 0.2 0.1 0.2 0.15 125 0.1 85 150 0.05 VGS = 2.5V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 5 0.6 5 VGS =4.5V 4 VGS = 10V 3 2 0.1 0.2 0.3 0.4 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 6 0 1 VGS = 10V 8 150 6 125 85 25 2 -55 0 0.2 0.3 ID, DRAIN CURRENT (A) 0.4 Document number: DS30366 Rev. 21 - 2 3 3.4 12 8 ID = 170mA 4 0 0 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) 20 2 1.8 VGS = 10V, ID = 170mA 1.6 1.4 1.2 VGS = 4.5V, ID = 170mA 1 0.8 0.6 0.5 Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature BSS123 2.6 Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 10 0.1 2.2 16 Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0 1.8 20 ID, DRAIN-SOURCE CURRENT (A) 4 1.4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 25 -55 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) ADVANCE INFORMATION VGS = 4.0V 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Junction Temperature October 2019 (c) Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 1.8 8 7 6 VGS = 4.5V, ID = 170mA 5 4 3 VGS = 10V, ID = 170mA 2 1 -50 -25 0 25 50 75 100 125 1.6 ID = 1mA 1.4 1.2 ID = 250A 1 0.8 0.6 150 -50 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Junction Temperature 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE () 150 100 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 0.4 IS, SOURCE CURRENT (A) -25 Figure 8. Gate Threshold Variation vs. Junction Temperature 0.5 0.3 0.2 TJ = 85oC TJ = 125oC 0.1 TJ = TJ = 25oC 150oC TJ = -55oC Ciss 10 Coss Crss 1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) 0 1.5 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 1 10 RDS(ON) Limited 6 ID, DRAIN CURRENT (A) 8 VGS (V) ADVANCE INFORMATION BSS123 VDS = 30V, ID = 0.28A 4 0.1 PW =1ms PW =10ms PW =100ms 0.01 2 0 0.001 0 0.2 0.4 0.6 0.8 Qg (nC) Figure 11. Gate Charge BSS123 Document number: DS30366 Rev. 21 - 2 PW =100s TJ(Max) = 150 PW =1s TC = 25 Single Pulse PW =10s DUT on 1*MRP Board DC VGS= 10V 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 1000 Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com October 2019 (c) Diodes Incorporated BSS123 ADVANCE INFORMATION r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJA(t) = r(t) * RJA RJA = 357/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance BSS123 Document number: DS30366 Rev. 21 - 2 5 of 7 www.diodes.com October 2019 (c) Diodes Incorporated BSS123 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCE INFORMATION SOT23 All 7 H J K K1 GAUGE PLANE 0.25 a M A L C L1 B D F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm G Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X BSS123 Document number: DS30366 Rev. 21 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com October 2019 (c) Diodes Incorporated BSS123 IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2019, Diodes Incorporated www.diodes.com BSS123 Document number: DS30366 Rev. 21 - 2 7 of 7 www.diodes.com October 2019 (c) Diodes Incorporated