KE C SEMICONDUCTOR KTC90138 KOREA ELECTRONICS CO.LTD. TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES c * Excellent hrr Linearity. * Complementary to KTC9012 MAXIMUM RATINGS (Ta=25C) TS Piro wax B 4.80 MAX CHARACTERISTIC SYMBOL | RATING | UNIT c 3.70 MAX D 0.45 Collector-Base Voltage Vero 40 Vv : ar G 0.85 Collector-Emitter Voltage Vero 30 Vv 7 Onno 50 K 0.55 MAX Emitter-Base Voltage VERO 3 V , , L 2.30 M 0.45 MAX Collector Current Ic 300 mA 7 23 x 00 = 1. EMITTER Emitter Current Te -500 mA 2. BASE 3. COLLECTOR Collector Power Dissipation Pe 625 mW Junction Temperature Tj 150 Cc TO-92 Storage Temperature Range Tstg -55 ~ 150 Cc ELECTRICAL CHARACTERISTICS (Ta=25T) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.) MAX. | UNIT Collector Cut-off Current Tcrno Vcn=35V, I[p=0 - - 0.1 HA Emitter Cut-off Current Teno Ven=oV, Ic=0 - - 0.1 HA DC Current Gain hre(Note) | Vee=1V, Ic=50mA 64 - 246 Collector-Emitter Vertaa) Ic=100mA, Ip=10mA - 0.1 0.25 Vv Saturation Voltage Base-Emitter Voltage Var Ic=100mA, Vcr=1V - 0.8 1.0 Vv Transition Frequency fr Vcr=6V, Ic=20mA, f=100MHz 140 - - MHz Collector Output Capacitance Cob Vcs=6V, In=0, f=1MHz - 7.0 - pF Note : hye Classification D:64~91, E:78~ 112, F:96 ~ 135, G:118~ 166, H:144 ~ 202, 1:176 ~ 246 1904. 5. 11 Revision No : 0 KEC 1/1