A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 5.0 mA 20 V
BVCBO IC = 5.0 mA 50 V
BVCES IC = 5.0 mA 50 V
BVEBO IE = 1.0 mA 3.5 V
ICBO VCB = 35 V 0.5 mA
hFE VCE = 5.0 V IC = 100 A 10 100 ---
COB VCB = 35 V f = 1.0 MHz 2.5 5.0 pF
PG
ηC VCC = 35 V POUT = 2.0 W f = 1090 MHz 10
40 12
35 dB
%
NPN SILICON RF POWER TRANSISTOR
MRF1002MB
DESCRIPTION:
The ASI MRF1002MB is Designed for
Class C, DME/TACAN Applications up to
1150 MHz.
FEATURES:
• Class C Operation
• PG = 9.0 dB at 2.0 W/1150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 250 mA
VCEO 20 V
VCBO 50 V
PDISS 7.0 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 25 °C/W
PACKAGE STYLE .280 4L PILL (A)
1 = COLLECTOR 2 = EMITTER 3 & 4 = BASE
MINIMUM
inches / m m
.0 0 4 / 0 .1 0
1.000 / 25.40
.0 5 0 / 1 .2 7
B
C
D
E
F
A
MAXIMUM
.0 6 5 / 1 .6 5
.1 4 5 / 3 .6 8
.0 0 7 / 0 .1 8
inches / m m
.205 / 5.21
DIM
.095 / 2.41 .105 / 2.67
F
E
A
.100x45°
D
B
C
ØG
G.2 7 5 / 6 .9 9 .2 8 5 / 7 .2 1
.195 / 4.95
34
1
2
