DC9013
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1W output amplifier of portable
redios in class B push-pull operation.
Pinning
1 = Emitter
2 = Base
3 = Collector
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 500 mA
Base Current IB 100 mA
Total Power Dissipation PD 625 mW
Junction Temperature TJ +150 oC
Storage Temperature TSTG -55 to +150 oC
Absolute Maximum Ratings(TA=25oC)
TO-92
.022(0.56)
.014(0.36)
.050
(1.27)
.148(3.76)
.132(3.36)
Typ
.190(4.83)
.170(4.33)
.100
(2.54)Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.190(4.83)
.170(4.33)
.500
(12.70)Min
2oTyp
5oTyp.
2oTyp
3 2 1
5oTyp.
Dimensions in inches and (millimeters)
Characteristic Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Volatge BVCBO 40 - - V IC=100µA, IE=0
Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA, IB=0
Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100µA, IC=0
Collector Cutoff Current ICBO - - 100 nA VCB=25V, IE=0
Emitter Cutoff Current IEBO - - 100 nA VEB=3V, IC=0
Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.6 V IC=500mA, IB=50mA
Base-Emitter Saturation Voltage(1) VBE(sat) - - 1.2 V IC=500mA, IB=50mA
Base-Emitter On Voltage VBE(on) - - 0.9 V IC=10mA, VCE=1V
DC Current Gain(1) hFE1 64 120 300 - IC=50mA, VCE=1V
hFE2 40 - - - IC=500mA, VCE=1V
Transition Frequency fT 100 - - MHz IC=10mA, VCE=1V, f=100MHz
Output Capacitance Cob - - 8 pF VCB=10V, f=1MHz
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Rank D E F G H I I1 I2
Range 64~91 78~112 96~135 112~166 144~202 176~300 176~246 214~300
Classification of hFE1
