APT40GF120JRD - Advanced Power Technology

052-6256 Rev A

APT40GF120JRD

1200V 60A

The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non-

Punch Through Technology the Fast IGBT™ combined with an APT free-

wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior

ruggedness and fast switching speed.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

• Low Tail Current • Ultra Low Leakage Current

• RBSOA and SCSOA Rated

• Ultrafast Soft Recovery Antiparallel Diode

Fast IGBT & FRED

SOT-227

ISOTOP®"UL Recognized"

PRELIMINARY

APT40GF120JRD

1200

±20

120

390

-55 to 150

300

MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.

MIN TYP MAX

1200

4.5 5.5 6.5

2.9 3.4

3.5 4.1

0.8

TBD

±100

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.8mA)

Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)

Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2

Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2

Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)

Symbol

BVCES

VGE(TH)

VCE(ON)

ICES

IGES

STATIC ELECTRICAL CHARACTERISTICS (IGBT)

UNIT

Volts

Symbol

VCES

VCGR

VGE

IC1

IC2

ICM1

ICM2

TJ,TSTG

Parameter

Collector-Emitter Voltage

Collector-Gate Voltage (RGE = 20KΩ)

Gate-Emitter Voltage

Continuous Collector Current @ TC = 25°C

Continuous Collector Current @ TC = 90°C

Pulsed Collector Current 1 @ TC = 25°C

Pulsed Collector Current 1 @ TC = 90°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

UNIT

Volts

Amps

Watts

°C

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 57 9215 15 FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com

PRELIMINARY

Symbol

Cies

Coes

Cres

Qge

Qgc

td(on)

td(off)

td(on)

td(off)

Eon

Eoff

Ets

td(on)

td(off)

Ets

gfe

DYNAMIC CHARACTERISTICS (IGBT) APT40GF120JRD

UNIT

°C/W

lb•in

N•m

MIN TYP MAX

0.32

0.66

1.03

29.2

1.1

Characteristic

Junction to Case (IGBT)

Junction to Case (FRED)

Junction to Ambient

Package Weight

Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)

Symbol

RΘJC

RΘJA

Torque

THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)

Test Conditions

Capacitance

VGE = 0V

VCE = 25V

f = 1 MHz

Gate Charge

VGE = 15V

VCC = 0.5VCES

IC = IC2

Resistive Switching (25°C)

VGE = 15V

VCC = 0.8VCES

IC = IC2

RG = 5Ω

Inductive Switching (150°C)

VCLAMP(Peak) = 0.66VCES

VGE = 15V

IC = IC2

RG = 5Ω

TJ = +150°C

Inductive Switching (25°C)

VCLAMP(Peak) = 0.66VCES

VGE = 15V

IC = IC2

RG = 5Ω

TJ = +25°C

VCE = 20V, IC = IC2

MIN TYP MAX

3500 4700

490 700

230 345

320

200

130

215

145

400

140

4.5

5.0

9.5

100

340

105

8.0

UNIT

052-6256 Rev A

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Emitter Charge

Gate-Collector ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy 4

Turn-off Switching Energy

Total Switching Losses 4

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Total Switching Losses 4

Forward Transconductance

1Repetitive Rating: Pulse width limited by maximum junction temperature.

2Leakages include the FRED and IGBT.

3See MIL-STD-750 Method 3471

4Switching losses include the FRED and IGBT.

APT Reserves the right to change, without notice, the specifications and information contained herein.

052-6256 Rev A

APT40GF120JRD

PRELIMINARY

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

Maximum Average Forward Current (TC = 60°C, Duty Cycle = 0.5)

RMS Forward Current

Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3mS)

Symbol

VRRM

VRWM

IF(AV)

IF(RMS)

IFSM

Symbol

Characteristic / Test Conditions

IF = 60A

Maximum Forward Voltage IF = 120A

IF = 60A, TJ = 150°C

STATIC ELECTRICAL CHARACTERISTICS (FRED)

UNIT

Volts

Amps

UNIT

Volts

MIN TYP MAX

2.5

2.0

APT40GF120JRD

1200

100

540

MAXIMUM RATINGS (FRED) All Ratings: TC = 25°C unless otherwise specified.

ULTRAFAST SOFT RECOVERY PARALLEL DIODE

MIN TYP MAX

70 85

130

170

18 30

29 40

630

1820

900

600

UNIT

Amps

Volts

A/µs

Characteristic

Reverse Recovery Time, IF = 1.0A, diF/dt = -15A/µs, VR = 30V, TJ = 25°C

Reverse Recovery Time TJ = 25°C

IF = 60A, diF/dt = -480A/µs, VR = 650V TJ = 100°C

Forward Recovery Time TJ = 25°C

IF = 60A, diF/dt = 480A/µs, VR = 650V TJ = 100°C

Reverse Recovery Current TJ = 25°C

IF = 60A, diF/dt = -480A/µs, VR = 650V TJ = 100°C

Recovery Charge TJ = 25°C

IF = 60A, diF/dt = -480A/µs, VR = 650V TJ = 100°C

Forward Recovery Voltage TJ = 25°C

IF = 60A, diF/dt = 480A/µs, VR = 650V TJ = 100°C

Rate of Fall of Recovery Current TJ = 25°C

IF = 60A, diF/dt = -480A/µs, VR =650V TJ = 100°C

DYNAMIC CHARACTERISTICS (FRED)

Symbol

trr1

trr2

trr3

tfr1

tfr2

IRRM1

IRRM2

Qrr1

Qrr2

Vfr1

Vfr2

diM/dt

PRELIMINARY

APT40GF120JRD

052-6256 Rev A

SOT-227 (ISOTOP®) Package Outline

PEARSON 411

CURRENT

TRANSFORMER

0.5 IRRM

/dt Adjust

30µH

D.U.T.

+15v

-15v

0.75 IRRM

trr/Qrr

Waveform

Zero

/dt - Current Slew Rate, Rate of Forward

Current Change Through Zero Crossing.

- Forward Conduction Current

RRM

- Peak Reverse Recovery Current.

trr - Reverse Recovery Time Measured from Point of I

Qrr - Area Under the Curve Defined by I

RRM

and trr.

diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.

Current Falling Through Zero to a Tangent Line

{

diM/dt

}

Extrapolated Through Zero Defined by 0.75 and 0.50 I

RRM

Figure 25, Diode Reverse Recovery Test Circuit and Waveforms

Figure 8, Diode Reverse Recovery Waveform and Definitions

Qrr = 1/2

(

trr . I

RRM

)

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033) 12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

* Emitter Collector

Gate

r = 4.0 (.157)

(2 places) 4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

* Emitter

Source terminals are shorted

internally. Current handling

capability is equal for either

Source terminal.