© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 8
1Publication Order Number:
MMBTA05LT1/D
MMBTA05L, MMBTA06L,
SMMBTA06L
Driver Transistors
NPN Silicon
Features
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBTA05LT1
MMBTA06LT1, SMMBTA06LT1
VCEO
60
80
Vdc
Collector−Base Voltage
MMBTA05LT1
MMBTA06LT1, SMMBTA06LT1
VCBO
60
80
Vdc
Emitter−Base Voltage VEBO 4.0 Vdc
Collector Current − Continuous IC500 mAdc
Electrostatic Discharge ESD HBM Class 3B
MM Class C
CDM Class IV
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5
Board (Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23
CASE 318
STYLE 6
2
3
1
MARKING DIAGRAMS
1H M G
G
MMBTA05LT1
COLLECTOR
3
1
BASE
2
EMITTER
1GM M G
G
MMBTA06LT1,
SMMBTA06L
http://onsemi.com
1H, 1GM = Specific Device Code
M = Date Code*
G= Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBTA05L, MMBTA06L, SMMBTA06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0) MMBTA05
MMBTA06, SMMBTA06
V(BR)CEO
60
80
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO 4.0 −Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICES −0.1 mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) MMBTA05
(VCB = 80 Vdc, IE = 0) MMBTA06, SMMBTA06
ICBO
−
−
0.1
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
100
100
−
−
−
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat) −0.25 Vdc
Base−Emitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
VBE(on) −1.2 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
fT100 −MHz
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. Switching Time Test Circuits
OUTPUT
TURN-ON TIME
-1.0 V VCC
+40 V
RL
* CS t 6.0 pF
RB
100
100
Vin
5.0 mF
tr = 3.0 ns
0
+10 V
5.0 ms
OUTPUT
TURN-OFF TIME
+VBB VCC
+40 V
RL
* CS t 6.0 pF
RB
100
100
Vin
5.0 mF
tr = 3.0 ns
5.0 ms
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
MMBTA05L, MMBTA06L, SMMBTA06L
http://onsemi.com
3
Figure 2. Current Gain Bandwidth Product vs.
Collector Current
Figure 3. Capacitance
Figure 4. Switching Time
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)
VCE = 2.0 V
TA = 25°C
TA = 25°C
Cibo
Cobo
2010
IC, COLLECTOR CURRENT (mA)
200
100
50
20
10 100
t, TIME (ns)
50 200 500
1.0 k
500
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
tr
5.0 7.0
30
70
300
700
30 70
td @ VBE(off) = 0.5 V
C, CAPACITANCE (pF)
300
Figure 5. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (mA)
TA = 150°CVCE = 1.0 V
ftau, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
1000
100
10
1 10 100 1000 0.1 1 10 100
100
10
1
TA = 25°C
TA = −55°C
hfe, DC CURRENT GAIN
0.1 1 10 100
1000
1000
100
10
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
0.01
0.1
1
10.1
0.2
0.3
0.4
0.6
0.7
0.8
1.0
1.1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
0.5
0.9
IC/IB = 10
TA = 150°C
TA = 25°C
TA = −55°C
1.2
10 100 1000
TA = 150°C
TA = 25°C
TA = −55°C
10.1 10 100 1000
MMBTA05L, MMBTA06L, SMMBTA06L
http://onsemi.com
4
Figure 8. Base Emitter Turn−ON Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (mA)
1.1
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 1 V
Figure 9. Saturation Region
IB, BASE CURRENT (mA)
TA = 25°C
IC =
100 mA
IC =
50 mA IC =
250 mA
IC =
500 mA
IC =
10 mA
Figure 10. Base−Emitter Temperature
Coefficient
100 5000.5
IC, COLLECTOR CURRENT (mA)
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8 10
RqVB for VBE
1.0 2.0 5.0 20 50 200
Figure 11. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
10000
IC, COLLECTOR CURRENT (mA)
Thermal Limit
100 ms
1 s
10 ms
1 ms
TA = 150°C
TA = 25°C
TA = −55°C
10.1 10 100 1000
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10.1 10 1000.01
1.0
0.8
0.6
0.4
0.2
0
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
RqVB, TEMPERATURE COEFFICIENT (mV/°C)
Single Pulse at TA = 25°C
MMBTA06L
Figure 12. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
10000
IC, COLLECTOR CURRENT (mA)
1000
100
10
1
1000
100
10
1
Thermal Limit
100 ms
1 s
10 ms
1 ms
Single Pulse at TA = 25°C
MMBTA05L
MMBTA05L, MMBTA06L, SMMBTA06L
http://onsemi.com
5
ORDERING INFORMATION
Device Package Shipping†
MMBTA05LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBTA05LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBTA06LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
SMMBTA06LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBTA06LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
SMMBTA06LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MMBTA05L, MMBTA06L, SMMBTA06L
http://onsemi.com
6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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Phone: 81−3−5817−1050
MMBTA05LT1/D
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