SURFACE MOUNT GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Epoxy : Device has UL flammability classification 94V-0
* Weight : 0.057 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
HFM101ER
THRU
HFM108ER
DO-214AC
MAXIMUM RA TINGS
(At TA = 25oC unless otherwise noted)
HIGH EFFICIENCY SILICON RECTIFIER
Dimensions in inches and (millimeters)
MECHANICAL DA TA
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.209 (5.31)
0.185 (4.70)
0.035 (0.89)
0.059 (1.50)
0.067 (1.70)
0.091 (2.31)
0.160(4.06)
0.180(4.57)
0.086 (2.18)
0.110 (2.79)
0.067 (1.70)
0.051 (1.29)
ELECTRICAL CHARACTERISTICS
(At TA = 25oC unless otherwise noted)
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts. 2002-5
Maximum DC Reverse Current at
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
UNITS
uAmps
nSec
Maximum Full Load Reverse Current, Full cycle A verage
TA = 55oC
Maximum Forward V oltage at 1.0A DC Volts
5.0
50
Maximum Reverse Recovery Time (Note 1)
Rated DC Blocking V oltage
50 uAmps
1.0 1.7
75
1.3
@TA = 25oC
@TA = 125oC
100 uAmps
RATINGS
Maximum Recurrent Peak Reverse V oltage
Maximum RMS Volts
Maximum DC Blocking V oltage
Maximum Average Forward Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps1.0
30
15
-65 to + 150
Amps
pF
0
C
UNITS
12
50
35
50
100
70
100
300
210
300
400
280
400
800
560
800
1000
700
1000
200
140
200
600
420
600
HFM
102ER
HFM
101ER HFM
108ER
HFM
107ER
HFM
106ER
HFM
105ER
HFM
104ER
HFM
103ER
HFM
102ER
HFM
101ER HFM
108ER
HFM
107ER
HFM
106ER
HFM
105ER
HFM
104ER
HFM
103ER
Reverse Energy ( Ir=1A ) E
R
20 mJ
RECTRON
RATING AND CHARACTERISTIC CURVES ( HFM101ER THRU HFM108ER )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE 10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A 1cm SET TIME BASE FOR
10/20 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
2.0
1.0
0 25 50 75 100125150175
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
10
1.0
.1
.01
.0010 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
Pulse Width = 300uS
1% Duty Cycle
TJ = 25
HFM106ER~HFM108ER
HFM101ER~HFM103ER
HFM104ER~HFM105ER
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
TJ = 100
TJ = 150
100
10
1.0
.1
.01 400 20 60 80 100 120 140
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1.1 .2 .4 1.0 2 4 10 20 40 100
HFM101ER~HFM105ER
HFM106ER~HFM108ER
TJ = 25
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
70
60
50
40
30
20
10
01 2 5 10 20 50 100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Mounting Pad Layout
RECTRON
0.060 MIN.
(1.52 MIN.)
0.052 MIN.
(1.32 MIN.)
0.220
0.094 MAX.
(2.38 MAX.)
(5.58) REF
Dimensions in inches and (millimeters)
