DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
1 of 6
www.diodes.com
March 2016
© Diodes Incorporated
DMTH10H010LCT
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON)
Package
ID
TC = +25°C
100V
9.5mΩ @VGS = 10V
TO220AB
108A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Rated to +175°C – Ideal for High Ambient Temperature
Environments
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO220AB
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: TO220AB – 1.85 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMTH10H010LCT
TO220AB
50 pieces/tube
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
H10H010 = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 15 = 2015)
WW or WW = Week Code (01 to 53)
Equivalent Circuit
Top View
Pin Out Configuration
Top View
Bottom View
TO220AB
YYWW
H10H010
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
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March 2016
© Diodes Incorporated
DMTH10H010LCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TC = +25°C
TC = +100°C
ID
108
76
A
Maximum Continuous Body Diode Forward Current
TC = +25°C
IS
90
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
IDM
92
A
Avalanche Current, L=0.3mH (Note 7)
IAS
10
A
Avalanche Energy, L=0.3mH (Note 7)
EAS
15
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Steady State
PD
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RJA
°C/W
Total Power Dissipation
TC = +25°C
PD
W
Thermal Resistance, Junction to Case
RJC
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
100
—
—
V
VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current
IDSS
—
—
1
µA
VDS = 80V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(TH)
1.4
1.9
3.5
V
VDS = VGS, ID = 250 A
Static Drain-Source On-Resistance
RDS(ON)
—
6.9
9.5
mΩ
VGS = 10V, ID = 13A
Diode Forward Voltage
VSD
—
1.3
V
VGS = 0V, IS = 13A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
—
2592
—
pF
VDS = 50V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
—
792
—
Reverse Transfer Capacitance
Crss
—
45
—
Gate Resistance
RG
—
2
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
—
53.7
—
nC
VDD = 50V, ID = 13A,
VGS = 10V
Gate-Source Charge
Qgs
—
10.6
—
Gate-Drain Charge
Qgd
—
8.2
—
Turn-On Delay Time
tD(ON)
—
11.6
—
ns
VDD = 50V, VGS = 10V,
ID = 13A, RG = 6Ω
Turn-On Rise Time
tR
—
14.1
—
Turn-Off Delay Time
tD(OFF)
—
42.9
—
Turn-Off Fall Time
tF
—
22
—
Reverse Recovery Time
tRR
—
49.8
—
ns
IF = 13A, di/dt = 100A/µs
Reverse Recovery Charge
QRR
—
85.1
—
nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
3 of 6
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March 2016
© Diodes Incorporated
DMTH10H010LCT
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
I , DRAIN CURRENT (A)
D
V , DRAIN -SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristics
V = 3.5V
GS
V = 3.0V
GS
V = 10.0V
GS
V = 6.0V
GS
V = 5.0V
GS
V = 4.5V
GS
V = 4.0V
GS
0
5
10
15
20
25
30
1 2 3 4 5 6
I , DRAIN CURRENT (A)
D
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
V = 5.0V
DS
T = 125 C
A
T = 85 C
A
T = 25 C
A
T = -55 C
A
T = 175 C
A
T = 150 C
A
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.01
0 5 10 15 20 25 30 35 40 45 50
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 10V
GS
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0 4 8 12 16 20
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
I = 13A
D
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0 5 10 15 20 25 30
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I , DRAIN SOURCE CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Junction Temperature
V = 10V
GS
T = 25 C
A
T = 85 C
A
T = 125 C
A
T = 150 C
A
T = 175 C
A
T = -55 C
A
0.5
1
1.5
2
2.5
-50 -25 0 25 50 75 100 125 150 175
R , DRAIN-SOURCE
DS(ON)
ON-RESISTANCE (NORMALIZED)
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with
Junction Temperature
V = 10V
GS
I = 13A
D
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
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DMTH10H010LCT
0
0.003
0.006
0.009
0.012
0.015
-50 -25 0 25 50 75 100 125 150 175
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(on)
T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance Variation with
Junction Temperature
V = 10V
GS
I = 13A
D
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 -25 0 25 50 75 100 125 150 175
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
T , JUNCTION TEMPERATURE (°C)
A
Figure 8 Gate Threshold Variation vs.
Junction Temperature
I = 250µA
D
I = 1mA
D
0
5
10
15
20
25
30
0 0.3 0.6 0.9 1.2 1.5
I , SOURCE CURRENT (A)
S
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
T = 125 C
A
T = 150 C
A
T = 175 C
A
T = 85 C
A
T = 25 C
A
T = -55 C
A
10
100
1000
10000
0 5 10 15 20 25 30 35 40 45 50
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45 50 55
VGS (V)
Qg(nC)
Figure 11. Gate Charge
VDS = 50V, ID= 13A
0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
I , DRAIN CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12 SOA, Safe Operation Area
RDS(on)
Limited
T = 175°C
J(max)
T = 25°C
A
V = 10V
GS
Single Pulse
DUT on 1 * MRP Board
DC
P = 10s
WP = 1s
WP = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100 s
Wµ
TJ, JUNCTION TEMPERATURE (°C )
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
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DMTH10H010LCT
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO220AB
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
R (t) = r(t) * R
JC JC
R = 0.93°C/W
JC
Duty Cycle, D = t1/ t2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
D = 0.9
TO220AB
Dim
Min
Max
Typ
A
3.56
4.82
-
A1
0.51
1.39
-
A2
2.04
2.92
-
b
0.39
1.01
0.81
b2
1.15
1.77
1.24
c
0.356
0.61
-
D
14.22
16.51
-
D1
8.39
9.01
-
D2
11.45
12.87
-
e
-
-
2.54
e1
-
-
5.08
E
9.66
10.66
-
E1
6.86
8.89
-
H1
5.85
6.85
-
L
12.70
14.73
-
L1
-
6.35
-
L2
15.80
16.20
16.00
P
3.54
4.08
-
Q
2.54
3.42
-
All Dimensions in mm
E
Q
D1
D
ØP
L1
L
e
b
A1
A
H1
c
A2
b2
H1
D2
E1
e1
E/2
L2
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
6 of 6
www.diodes.com
March 2016
© Diodes Incorporated
DMTH10H010LCT
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