This product complies with the RoHS Directive (EU 2002/95/EC). DSC8P01 Silicon NPN epitaxial planar type darlington For low frequency output amplification Darlington connection DSC2P01 in MT-2 through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code MT-2-A2-B Packaging Pin Name 1. Emitter 2. Collector 3. Base Package dimension clicks here. DSC8P01x0A Radial type : 2000 pcs / carton Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 500 A Peak collector current ICP 750 A Collector power dissipation PC 1 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Click! Marking Symbol: E5 C B 200 E Note) Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion Absolute maximum rating without heat sink for PC is 0.5 W Electrical Characteristics Ta = 25C3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 100 mA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 100 mA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 100 nA Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 100 nA Forward current transfer ratio *1, 2 20 000 hFE VCE = 10 V, IC = 500 mA Collector-emitter saturation voltage *1 4 000 VCE(sat) IC = 500 mA, IB = 0.5 mA 2.5 V Base-emitter saturation voltage *1 VBE(sat) IC = 500 mA, IB = 0.5 mA 3.0 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Code Q R Rank Q R hFE 4 000 to 10 000 8 000 to 20 000 Marking Symbol E5Q E5R Publication date: February 2012 Ver. AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DSC8P01 DSC8P01_IC-VCE PC Ta IC VCE 250 250 200 150 100 25 A 50 0 40 80 120 160 0 200 Ambient temperature Ta (C) 0 2 4 25C 8 000 -30C 4 000 10 500 Collector current IC (mA) IC / IB = 1 000 -30C 1 Ta = 85C 1 10 102 103 400 25C -30C 100 0 0 0.5 1.0 IC / IB = 1 000 10 10-1 -30C Ta = 85C 1 10 102 1.5 103 Collector current IC (mA) Ver. AED 102 103 Collector current IC (mA) Cob VCB 300 200 10 DSC8P01_Cob-VCB Ta = 85C VBE(sat) IC 1 0 1 12 VCE = 10 V DSC8P01_VBEsat-IC 25C 10 2.0 Base-emitter voltage VBE (V) Collector current IC (mA) 102 8 IC VBE 25C 10-1 6 DSC8P01_IC-VBE VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 12 000 Collector-emitter voltage VCE (V) DSC8P01_VCEsat-IC Base-emitter saturation voltage VBE(sat) (V) Ta = 85C 20 A 0 2 16 000 Forward current transfer ratio hFE 500 VCE = 10 V IB = 30 A Ta = 25C Collector current IC (mA) 750 hFE IC 20 000 300 Copper plate at the collector is more than 1.0 cm2 in area, 1.7 mm in thickness. 1 000 DSC8P01_hFE-IC 2.5 Collector output capacitance (Common base, input open circuited) Cob (pF) Collector power dissipation PC (mW) 1 250 DSC8P01_PC-Ta 12 IE = 0 f = 1 MHz Ta = 25C 10 8 6 4 2 0 1 10 102 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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