Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: February 2012 1
DSC8P01
Silicon NPN epitaxial planar type darlington
For low frequency output amplification
Darlington connection
DSC2P01 in MT-2 through hole type package
Features
High forward current transfer ratio hFE with excellent linearity
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
DSC8P01×0A Radial type : 2000 pcs / carton
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 5 V
Collector current IC500 A
Peak collector current ICP 750 A
Collector power dissipation PC1 W
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness
of 1.7 mm for the collector portion
Absolute maximum rating without heat sink for PC is 0.5 W
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 mA, IE = 0 60 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 50 V
Emitter-base voltage (Collector open) VEBO IE = 100 mA, IC = 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 100 nA
Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 100 nA
Forward current transfer ratio *1, 2 hFE VCE = 10 V, IC = 500 mA 4
000 20
000
Collector-emitter saturation voltage *1VCE(sat) IC = 500 mA, IB = 0.5 mA 2.5 V
Base-emitter saturation voltage *1VBE(sat) IC = 500 mA, IB = 0.5 mA 3.0 V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code Q R
Rank Q R
hFE 4
000 to 10
000 8
000 to 20
000
Marking Symbol E5Q E5R
Package
Code
MT-2-A2-B
Package dimension clicks here.→
Pin Name
1. Emitter
2. Collector
3. Base
Marking Symbol: E5
C
B
≈ 200 ΩE
Click!
Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC8P01
2
PC Ta IC VCE hFE IC
VCE(sat) IC IC VBE Cob VCB
00 20016040 12080
Ambient temperature Ta (°C)
Collector power dissipation PC (mW)
DSC8P01_PC-Ta
250
1
000
750
500
1
250
Copper plate at the collector is
more than 1.0 cm2 in area, 1.7 mm
in thickness.
0
0 122 104 86
300
250
200
150
50
100
Collector current IC (mA)
Collector-emitter voltage VCE (V)
DSC8P01_IC-VCE
Ta = 25°CIB = 30 µA
20 µA
25 µA
0
1
20
000
16
000
12
000
8
000
4
000
10 102103
Forward current transfer ratio hFE
Collector current IC (mA)
DSC8P01_hFE-IC
25°C
−30°C
Ta = 85°C
VCE = 10 V
10−1
1
1
10
10 102103
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
DSC8P01_VCEsat-IC
25°C
−30°C
Ta = 85°C
IC / IB = 1
000
0
0 2.50.5 1.0 2.01.5
500
400
300
200
100
Collector current IC (mA)
Base-emitter voltage VBE (V)
DSC8P01_IC-VBE
−30°C
25°C
Ta = 85°C
VCE = 10 V
01
12
10
8
6
4
2
10 102
Collector-base voltage VCB (V)
DSC8P01_Cob-VCB
Collector output capacitance
(Common base, input open circuited) Cob (pF)
IE = 0
f = 1 MHz
Ta = 25°C
VBE(sat) IC
10−1
1
1
10
102
10 102103
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC (mA)
DSC8P01_VBEsat-IC
25°C−30°C
Ta = 85°C
IC / IB = 1
000
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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