SGA6489Z SGA6489ZLow Noise, High Gain SiGe HBT DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA6489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain & Return Loss vs. Frequency GaAs HBT VD= 5.1 V, ID= 75 mA (Typ.) GaAs MESFET 24 0 GAIN InGaP HBT 18 Gain (dB) SiGe HBT GaAs pHEMT -10 ORL 12 -20 IRL Si CMOS 6 -30 Return Loss (dB) SiGe BiCMOS Si BiCMOS High Gain: 17.5dB at 1950MHz Cascadable 50 Operates from Single Supply Low Thermal Resistance Package Applications Optimum Technology Matching(R) Applied PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Si BJT GaN HEMT 0 InP HBT -40 0 1 RF MEMS 2 3 Frequency (GHz) 4 5 LDMOS Parameter Small Signal Gain Min. 18.4 Output Power at 1dB Compression Output Third Intercept Point Specification Typ. 20.1 17.5 16.5 20.7 18.7 34.0 32.0 3500 Max. 22.4 Unit dB dB dB dBm dBm dBm dBm MHz Condition 850MHz 1950MHz 2400MHz 850MHz 1950MHz 850MHz 1950MHz >10dB Bandwidth Determined by Return Loss Input Return Loss 14.4 dB 1950MHz Output Return Loss 10.9 dB 1950MHz Noise Figure 3.0 dB 1950MHz Device Operating Voltage 4.7 5.1 5.5 V Device Operating Current 67 75 83 mA Thermal Resistance 97 C/W (Junction - Lead) Test Conditions: VS =8V, ID =75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =39, TL =25C, ZS =ZL =50 RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS111014 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SGA6489Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) 150 mA Max Device Voltage (VD) 7 V Max RF Input Power +18 dBm Max Junction Temp (TJ) +150 C -40 to +85 C Max Storage Temp +150 C Moisture Sensitivity Level MSL 2 Operating Temp Range (TL) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l Typical Performance at Key Operating Frequencies Parameter Unit 100 MHz 500 MHz 850 MHz 1950 MHz Small Signal Gain dB 21.0 20.8 20.1 17.5 Output Third Order Intercept Point dBm 35.0 34.5 34.0 32.0 Output Power at 1dB Compression dBm 20.6 20.9 20.7 18.7 Input Return Loss dB 29.4 30.8 24.7 14.4 Output Return Loss dB 18.7 16.3 14.6 10.9 Reverse Isolation dB 23.9 23.8 23.9 22.2 Noise Figure dB 3.2 2.8 2.7 3.0 Test Conditions: VS =8V, ID =75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL =25C, ZS =ZL =50 OIP3 vs. Frequency 22 36 20 P1dB(dBm) OIP3(dBm) 16.5 30.1 17.4 12.5 10.9 21.4 3.4 14.0 25.0 14.0 10.8 10.0 19.3 4.4 VD= 5.1 V, ID= 75 mA 40 32 28 +25C TL 3500 MHz P1dB vs. Frequency VD= 5.1 V, ID= 75 mA 24 2400 MHz 18 16 +25C TL 14 -40C +85C -40C +85C 20 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 Frequency (GHz) 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Noise Figure vs. Frequency VD=5.1 V, ID= 75 mA Noise Figure (dB) 5 4 3 2 TL=+25C 1 0 0 2 of 6 1 2 Frequency (GHz) 3 4 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111014 SGA6489Z |S21| vs. Frequency |S11| vs. Frequency VD= 5.1 V, ID= 75 mA 24 -10 |S11| (dB) 18 |S21| (dB) VD= 5.1 V, ID= 75 mA 0 12 6 0 0 1 -30 +25C -40C +85C TL 2 3 4 Frequency (GHz) 5 -20 -40 0 6 1 |S12| vs. Frequency 5 -10 |S22| (dB) |S12 | (dB) 4 VD= 5.1 V, ID= 75 mA 0 -15 -18 -21 +25C -40C +85C TL -24 -20 -30 +25C -40C +85C TL -40 -27 0 1 2 3 Frequency (GHz) 4 0 5 VD vs. ID over Temperature for fixed VS= 8 V, RBIAS= 39 ohms * 1 2 3 Frequency (GHz) 4 5 VD vs. Temperature for Constant ID = 75 mA 90 5.7 85 5.5 +85C VD(Volts) 80 ID(mA) 2 3 Frequency (GHz) |S22| vs. Frequency VD= 5.1 V, ID= 75 mA -12 +25C -40C +85C TL +25C 75 70 5.3 5.1 -40C 4.9 65 60 4.7 4.7 4.9 5.1 VD(Volts) 5.3 5.5 -40 -15 10 35 Temperature(C) 60 85 * Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature. DS111014 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 6 SGA6489Z Pin 1 2, 4 Function RF IN GND 3 RF OUT/BIAS Description RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation. Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance. RF output and bias pin. DC voltage is present on this pin, therefor a DC-blocking capacitor is necessary for proper operation. Suggested Pad Layout Prelimina Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111014 SGA6489Z Application Schematic Frequency (Mhz) VS R BIAS 1 uF 1000 pF CD LC 4 1 SGA6489Z 3 RF in CB 2 RF out CB Reference Designator 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH Recommended Bias Resistor Values for ID=75mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 6V 12 8V 39 10 V 12 V 62 91 Note: RBIAS provides DC bias stability over temperature. Evaluation Board Layout Mounting Instructions: 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1 ounce copper on both sides. DS111014 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6 SGA6489Z Part Identification Ordering Information Ordering Code 6 of 6 Description SGA6489Z 13" Reel with 3000 pieces SGA6489ZSQ Sample Bag with 25 pieces SGA6489ZSR 7" Reel with 100 pieces SGA6489ZPCK1 850MHz, 8V Operation PCBA with 5-piece sample bag 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111014