TIP140 to TIP142 & TIP145 to TIP147
Darlington Transistors
Page 1 04/04/05 V1.0
Features:
Designed for general-purpose amplifier and low speed switching applications.
Collector-Emitter sustaining voltage
VCEO (sus) = 60V (Minimum) - TIP140, TIP145
= 80V (Minimum) - TIP141, TIP146
= 100V (Minimum) - TIP142, TIP147
Collector-Emitter saturation voltage
VCE (sat) = 2.0V (Maximum) at IC= 5.0A
Monolithic construction with Built-in Base-Emitter shunt resistor.
Pin 1. Base
2. Collector
3. Emitter
Dimensions Minimum Maximum
A 20.63 22.38
B 15.38 16.20
C 1.90 2.70
D 5.10 6.10
E 14.81 15.22
F 11.72 12.84
G 4.20 4.50
H 1.82 2.46
I 2.92 3.23
J 0.89 1.53
K 5.26 5.66
L 18.50 21.50
M 4.68 5.36
N 2.40 2.80
O 3.25 3.65
P 0.55 0.70
Dimensions : Millimetres
10 Ampere
Darlington
Complementary Silicon
Power Transistors
60 - 100 Volts
125 Watts
TO-247 (3P)
NPN PNP
TIP140 TIP145
TIP141 TIP146
TIP142 TIP147
TIP140 to TIP142 & TIP145 to TIP147
Darlington Transistors
Page 2 04/04/05 V1.0
Maximum Ratings
Characteristic Symbol TIP140
TIP145
TIP141
TIP146
TIP142
TIP147 Unit
Collector-Emitter Voltage VCEO
60 80 100
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5.0
Collector Current-Continuous
-Peak
IC
ICM
10
15 A
Base Current IB0.5
Total Power Dissipation at TC= 25°C
Derate above 25°C PD125
1.0
W
W/°C
Operating and Storage Junction Temperature Range TJ,TSTG -65 to +150 °C
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to case Rθjc 1.0 °C/W
Tc, Temperature (°C)
PD Power Dissipation (Watts)
TIP140 to TIP142 & TIP145 to TIP147
Darlington Transistors
Page 3 04/04/05 V1.0
ON Characteristics (1)
DC Current Gain
(IC= 5.0A, VCE = 4.0V)
(IC= 10A, VCE = 4.0V)
hFE 1000
500
- -
Collector-Emitter Saturation Voltage
(IC= 5.0A, IB= 10mA)
(IC= 10A, IB= 40mA)
VCE(sat) -2.0
3.0
V
Base-Emitter Saturation Voltage
(IC= 10A, IB= 40mA) VBE(sat) -3.5
Base-Emitter On Voltage
(IC= 10A, VCE = 4.0V) VBE(on) -3.0
Switching Characteristics
Delay Time
VCC = 30V, IC= 5.0A
IB1 = -IB2 = 20mA
tp= 20µs,
Duty cycle 2.0%
td0.15 (Typical) -
µs
Rise Time tr0.55 (Typical) -
Storage Time ts
2.5 (Typical)
-
Fall Time tf-
1. Pulse Test: Pulse width = 30µs, Duty cycle 2.0%
Electrical Characteristics (TC= 25°C unless otherwise specified)
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC= 30mA, IB= 0) TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
VCEO(sus) 60
80
100
-V
Collector Cut off Current
(VCE = 30V, IB= 0) TIP140, TIP145
(VCE = 40V, IB= 0) TIP141, TIP146
(VCE = 50V, IB= 0) TIP142, TIP147
ICEO -2.0
2.0
2.0
mA
Collector Cut off Current
(VCB = 60V, IE= 0) TIP140, TIP145
(VCB = 80V, IE= 0) TIP141, TIP146
(VCB = 100V, IE = 0) TIP142, TIP147
ICBO -1.0
1.0
1.0
Emitter Cut off Current
(VEB = 5.0V, IC= 0) IEBO -2.0
TIP140 to TIP142 & TIP145 to TIP147
Darlington Transistors
Page 4 04/04/05 V1.0
There are two limitations on the power handling ability of a transistor:
average junction temperature and second breakdown safe operating
area curves indicate IC-VCE limits of the transistor that must be
observed for reliable operation i.e., the transistor must not be subjected
to greater dissipation than curves indicate.
The data of SOA curve is base on TJ (PK) = 150°C; TCis variable
depending on conditions. At high case temperatures, thermal limitation
will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Internal Schematic Diagram
NPN : TIP140, TIP141, TIP142 PNP : TIP145, TIP146, TIP147
Active Region Safe Operating Area (SOA)
Small-Signal Common-Emitter Forward Current
Transfer Ratio Unclamped Inductive Load
TIP140 to TIP142 & TIP145 to TIP147
Darlington Transistors
Page 5 04/04/05 V1.0
PNP : TIP145, TIP146, TIP147
NPN : TIP140, TIP141, TIP142
DC Current Gain DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
TIP140 to TIP142 & TIP145 to TIP147
Darlington Transistors
Page 6 04/04/05 V1.0
IC
(A)
VCEO
maximum
(V)
hFE minimum at
IC= 5A
Ptot at 25°C
(W) Package TYPE Part Number
10
60
1000 125 TO-247 (3P)
NPN
TIP140
80 TIP141
100 TIP142
60
PNP
TIP145
80 TIP146
100 TIP147
Base-Emitter Voltage Base-Emitter Voltage
Specifications
PNP : TIP145, TIP146, TIP147
NPN : TIP140, TIP141, TIP142
For enquiries from all other markets
TIP140 to TIP142 & TIP145 to TIP147
Darlington Transistors
Page 7 04/04/05 V1.0
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