1EDS-101225 Rev. D
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza
Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
http://www.sirenza.comPhone: (800) SMI-MMIC303 S. Technology Court, Broomfield, CO 80021
0
5
10
15
20
25
30
35
024681012
3v, 20mA
5v, 40mA
Frequency (GHz)
Gain, Gmax (dB)
Typical Gain Performance
Sirenza Microdevices’ SPF-2086TK is a high performance
0.25µm pHEMT Gallium Arsenide FET with Schottky barrier
gates. This 300µm device is ideally biased at 3V,20mA for lowest
noise performance and battery powered requirements. At
5V,40mA the device delivers excellent output TOI of 32 dBm.
It provides ideal performance as driver stages in many
commercial, industrial and military LNA applications.
Product Description
Gmax
Gain
SPF-2086TK
Low Noise pHEMT GaAs FET
0.1 - 6 GHz Operation
Product Features
• 22 dB Gmax at 1.9 GHz
• 0.4 dB FMIN at 1.9 GHz
• +32 dBm Output IP3
•+20 dBm Output Power at 1dB Compression
Applications
• LNA for Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems
• Driver Stage for low power applications
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http://www.sirenza.comPhone: (800) SMI-MMIC
2EDS-101225 Rev. D
303 S. Technology Court, Broomfield, CO 80021
SPF-2086TK Low Noise FET
Noise parameters, at typical operating frequencies
F
REQ
HG
Z
F
MIN
Bd |G
OPT
|G
OPT
A
NG
r
N
WG
A
Bd
0.1 82.047.07122.01.32
0.2 44.096.01381.08.71
0.4 45.045.04890.09.31
0.6 07.082.097150.02.21
Bias VDS=3.0V, IDS=20mA
F
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Z
F
MIN
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OPT
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OPT
A
NG
r
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A
Bd
0.1 43.067.09172.09.32
0.2 55.076.06332.01.91
0.4 57.074.03911.00.51
0.6 40.113.0071-60.09.21
Bias VDS=5.0V, IDS=40mA
Operation of this device beyond any one of these
parameters may cause permanent damage.
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the operating conditions should also
satisfy the following experssions:
PDC - POUT < (TJ - TL) / RTH
where:
PDC = IDS * VDS (W)
POUT = RF Output Power (W)
TJ = Junction Temperature (°C)
TL = Lead Temperature (pin 4) (°C)
RTH = Thermal Resistance (°C/W)
Absolute Maximum Ratings
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http://www.sirenza.comPhone: (800) SMI-MMIC
3EDS-101225 Rev. D
303 S. Technology Court, Broomfield, CO 80021
SPF-2086TK Low Noise FET
Scattering Parameters:
zHGqerF |11S| gnA11S |12S| gnA12S |21S| gnA21S |22S| gnA22S
5.079.05.71-70.89.26110.05.5566.00.01-
0.129.02.43-67.71.64130.08.2746.09.81-
5.158.09.05-04.74.03140.09.2616.05.72-
0.267.02.96-60.79.41150.07.2575.06.63-
5.276.06.98-76.64.9960.03.5415.07.64-
0.385.06.901-61.63.5860.06.9374.04.55-
5.315.05.821-46.54.2770.02.3344.02.26-
0.464.04.641-61.55.0680.03.7224.00.86-
5.424.00.561-47.43.9480.00.3293.09.37-
0.504.01.57173.42.8390.09.8163.01.18-
5.514.00.55140.43.7290.06.4123.09.09-
0.644.01.73117.37.6101.05.992.09.201-
5.684.01.32134.36.601.03.562.07.511-
0.715.06.11181.39.2-01.02.132.05.821-
5.745.05.10169.29.11-11.01.2-12.07.141-
0.875.08.1957.20.12-11.06.5-02.02.651-
5.806.07.3855.25.92-21.03.9-91.09.071-
0.936.05.7704.24.73-21.00.31-02.01.271
5.966.04.1762.28.54-31.05.71-22.07.451
0.0196.03.6631.20.45-41.01.22-42.05.041
5.0107.01.1620.20.26-41.08.62-72.05.821
0.1117.07.5529.19.96-51.09.03-92.00.911
5.1127.01.0518.14.77-51.00.53-13.05.901
0.2157.00.5407.16.48-61.07.93-33.08.99
5.2167.03.0406.17.19-61.01.44-53.03.09
0.3177.04.6315.16.89-61.05.74-93.02.18
5.3177.09.2374.10.601-71.07.15-34.00.57
Typical S-parameters VDS=3.0V, IDS=20 mA
Note : De-embedded to device pins
http://www.sirenza.comPhone: (800) SMI-MMIC
4EDS-101225 Rev. D
303 S. Technology Court, Broomfield, CO 80021
SPF-2086TK Low Noise FET
Scattering Parameters:
zHGqerF |11S| gnA11S |12S| gnA12S |21S| gnA21S |22S| gnA22S
5.079.02.81-78.80.26110.08.2986.05.9-
0.119.09.53-74.86.44120.04.6676.01.81-
5.138.03.35-00.84.82130.03.0646.02.62-
0.247.02.27-45.76.21140.00.4506.05.43-
5.246.09.29-60.71.7950.06.6455.03.34-
0.355.04.311-64.62.3860.07.0415.09.05-
5.384.03.231-78.55.0760.09.5384.02.75-
0.434.03.051-53.58.8570.09.1364.06.26-
5.493.01.961-98.49.7470.09.7244.01.86-
0.573.09.07105.40.7380.05.5224.01.57-
5.593.02.15161.43.6280.01.2283.03.48-
0.634.03.43138.39.5190.02.7153.00.59-
5.674.00.12145.30.690.03.3123.02.601-
0.705.01.01192.36.3-01.06.903.06.711-
5.735.04.00170.37.21-01.07.582.03.921-
0.865.03.1968.28.12-11.04.262.05.141-
5.895.03.3866.22.03-21.08.0-52.06.451-
0.936.02.7725.23.83-31.06.4-62.03.071-
5.966.05.1783.28.64-31.05.9-72.09.271
0.0196.06.6642.21.55-41.02.41-92.04.751
5.0107.03.1621.23.36-51.05.91-13.00.441
0.1117.07.5510.24.17-51.04.42-33.05.331
5.1137.02.0509.10.97-61.02.92-53.01.321
0.2157.00.5487.14.68-61.08.33-63.06.211
5.2177.03.0476.17.39-71.09.73-83.00.201
0.3177.03.6385.19.001-71.02.24-24.07.19
5.3187.07.2335.14.801-81.07.64-64.07.38
Typical S-parameters VDS=5.0V, IDS=40 mA
Note : De-embedded to device pins
http://www.sirenza.comPhone: (800) SMI-MMIC
5EDS-101225 Rev. D
303 S. Technology Court, Broomfield, CO 80021
SPF-2086TK Low Noise FET
Part Number Ordering Information
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
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KT6802-FPS"70001
PCB Pad Layout
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Package Dimensions
Part Symbolization
The part will be symbolized with the “P2T”
designator and a dot signifying pin 1 on the top
surface of the package.
P2T
P2T
