IRF3710S - International Rectifier

IRF3710S

IRF3710L

HEXFET® Power MOSFET

09/15/09

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 0.75 °C/W

RθJA Junction-to-Ambient (PCB Mounted,steady-state)** ––– 40

Thermal Resistance

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VDSS = 100V

RDS(on) = 23mΩ

ID = 57A

Advanced HEXFET® Power MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable device for use in

a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die

sizes up to HEX-4. It provides the highest power capability and the lowest

possible on-resistance in any existing surface mount package. The D2Pak is

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF3710L) is available for low-profile applications.

lAdvanced Process Technology

lUltra Low On-Resistance

lDynamic dv/dt Rating

l175°C Operating Temperature

lFast Switching

lFully Avalanche Rated

Description

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V57

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V40 A

IDM Pulsed Drain Current  180

PD @TC = 25°C Power Dissipation 200 W

Linear Derating Factor 1.3 W/°C

VGS Gate-to-Source Voltage ± 20 V

IAR Avalanche Current28 A

EAR Repetitive Avalanche Energy20 mJ

dv/dt Peak Diode Recovery dv/dt  5.8 V/ns

TJOperating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

PD - 94201C

D2Pak

IRF3710S

TO-262

IRF3710L

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Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode)––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 28A, VGS = 0V 

trr Reverse Recovery Time ––– 140 220 ns TJ = 25°C, IF = 28A

Qrr Reverse Recovery Charge ––– 670 1010 nC di/dt = 100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

230

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Starting TJ = 25°C, L = 0.70mH, RG = 25Ω,

IAS = 28A, VGS=10V. (See Figure 12).

ISD ≤ 28A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

Notes:

 This is a typical value at device destruction and represents

operation outside rated limits.

 This is a calculated value limited to TJ = 175°C .

Uses IRF3710 data and test conditions.

**When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniques refer to application

note #AN-994.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 23 mΩVGS = 10V, ID =28A 

VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA

gfs Forward Transconductance 32 ––– ––– S VDS = 25V, ID = 28A

––– ––– 25 µA VDS = 100V, VGS = 0V

––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V

QgTotal Gate Charge ––– ––– 130 ID = 28A

Qgs Gate-to-Source Charge ––– ––– 26 nC VDS = 80V

Qgd Gate-to-Drain ("Miller") Charge ––– ––– 43 VGS = 10V, See Fig. 6 and 13

td(on) Turn-On Delay Time ––– 12 ––– VDD = 50V

trRise Time ––– 58 ––– ID = 28A

td(off) Turn-Off Delay Time ––– 45 ––– RG = 2.5Ω

tfFall Time ––– 47 ––– VGS = 10V, See Fig. 10 

Between lead,

––– ––– 6mm (0.25in.)

from package

and center of die contact

Ciss Input Capacitance ––– 3130 ––– VGS = 0V

Coss Output Capacitance ––– 410 ––– VDS = 25V

Crss Reverse Transfer Capacitance ––– 72 ––– pF ƒ = 1.0MHz, See Fig. 5

EAS Single Pulse Avalanche Energy ––– 1060280mJ IAS = 28A, L = 0.70mH

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

LDInternal Drain Inductance

LSInternal Source Inductance ––– –––

IGSS

4.5

7.5

IDSS Drain-to-Source Leakage Current

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 110 100

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

3.5V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 16V

10V

7.0V

6.0V

5.0V

4.5V

4.0V

BOTTOM 3.5V

0.1 110 100

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

3.5V

20µs PULSE WIDTH

Tj = 175°C

VGS

TOP 16V

10V

7.0V

6.0V

5.0V

4.5V

4.0V

BOTTOM 3.5V

3.0 4.0 5.0 6.0 7.0 8.0 9.0

VGS, Gate-to-Source Voltage (V)

0.10

1.00

10.00

100.00

1000.00

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 175°C

VDS = 15V

20µs PULSE WIDTH

-60 -40 -20 020 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

57A

50V

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

110 100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance(pF)

Coss

Crss

Ciss

VGS

= 0V, f = 1 MHZ

Ciss

= C

+ C

gd, C

SHORTED

Crss

= C

Coss

= C

+ C

0.0 0.5 1.0 1.5 2.0

VSD, Source-toDrain Voltage (V)

0.10

1.00

10.00

100.00

1000.00

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

1 10 100 1000

VDS , Drain-toSource Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

0 20406080100

QG Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

VGS, Gate-to-Source Voltage (V)

VDS= 80V

VDS= 50V

VDS= 20V

ID= 28A

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

VDS

90%

10%

VGS

d(on)

d(off)

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

VGS

VDD

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

25 50 75 100 125 150 175

T , Case Temperature ( C)

I , Drain Current (A)

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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QGS QGD

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

VGS

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

VGS

25 50 75 100 125 150 175

110

220

330

440

550

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

11A

20A

28A

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Peak Diode Recovery dv/dt Test Circuit

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period







VDD

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T*Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 14. For N-channel HEXFET® power MOSFETs

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D2Pak (TO-263AB) Part Marking Information

D2Pak (TO-263AB) Package Outline

Dimensions are shown in millimeters (inches)

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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRF3710S/IRF3710L

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TO-262 Part Marking Information

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

/2*2

5(&7,),(5

,17(51$7,21$/

/27&2'(

$66(0%/<

/2*2

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$ $66(0%/<6,7(&2'(

352'8&7237,21$/

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,17+($66(0%/</,1(&

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRF3710S/IRF3710L

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Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.09/2009

Dimensions are shown in millimeters (inches)

D2Pak Tape & Reel Information

TRR

FEED DIRECTION

1.85 (.073)

1.65 (.065)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

TRL

FEED DIRECTION

10.90 (.429)

10.70 (.421)

16.10 (.634)

15.90 (.626)

1.75 (.069)

1.25 (.049)

11.60 (.457)

11.40 (.449) 15.42 (.609)

15.22 (.601)

4.72 (.136)

4.52 (.178)

24.30 (.957)

23.90 (.941)

0.368 (.0145)

0.342 (.0135)

1.60 (.063)

1.50 (.059)

13.50 (.532)

12.80 (.504)

330.00

(14.173)

MAX.

27.40 (1.079)

23.90 (.941)

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

26.40 (1.039)

24.40 (.961)

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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