© 2003 IXYS All rights reserved
Features
•International standard packages
•miniBLOC, with Aluminium nitride
isolation
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
Advantages
•Easy to mount
•Space savings
•High power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 3 mA 1000 V
VGS(th) VDS = VGS, ID = 8 mA 3.0 5.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS TJ = 25°C 100 μA
VGS = 0 V TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 0.24 Ω
Pulse test, t ≤ 300 μs,
duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1000 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C, Chip capability 36 A
IDM TC= 25°C, pulse width limited by TJM 144 A
IAR TC= 25°C36A
EAR TC= 25°C64mJ
EAS TC= 25°C4J
dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, 5 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 700 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 30 g
HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
DS98520D(04/03)
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
IXFN 36N100 VDSS = 1000V
ID25 = 36A
RDS(on) = 0.24ΩΩ
ΩΩ
Ω
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFN 36N100
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 15 V; ID = 0.5 • ID25, pulse test 18 40 S
Ciss 9200 pF
Coss VGS = 0 V, VDS = 2 5 V , f = 1 M Hz 1200 p F
Crss 300 pF
td(on) 41 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 ns
td(off) RG= 1 Ω (External), 110 ns
tf30 ns
Qg(on) 380 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 65 nC
Qgd 185 nC
RthJC 0.18 K/W
RthCK 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 36 A
ISM Repetitive; 144 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, 1.3 V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/μs, VR = 100 VTJ =25°C 180 ns
TJ =125°C 330 ns
QRM TJ =25°C2 μC
IRM 8A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
http://store.iiic.cc/
© 2003 IXYS All rights reserved
IXFN 36N100
VGS - Volts
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
ID - Amperes
0
10
20
30
40
50
TC - Deg rees C
-50 -25 0 25 50 75 100 125 150
ID - Amperes
0
8
16
24
32
40
TJ - Degrees C
25 50 75 100 125 150
RDS(ON) - Normalized
1.0
1.3
1.6
1.9
2.2
ID =18A
ID - Amperes
0 1020304050
RDS(ON) - Normalized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VDS - Volts
0 5 10 15 20 25
ID - Amperes
0
10
20
30
40
50
VDS - Volts
0 4 8 12 16 20
ID - Amperes
0
20
40
60
80
VGS = 10V
VGS =10V
9V
8V
7V
TJ = 125OC
VGS = 10V
TJ = 25OC
5V
5V
6V
TJ = 25oC
ID = 36A
TJ = 25OC
TJ = 125oC
VGS =10V
9V
8V
7V
6V
TJ = 125OC
6V
Figure 3. RDS(on) normalized to 0.5 ID25 value
vs. ID
Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25OCFigure 2. Output Characteristics at 125OC
Figure 4. RDS(on) normalized to 0.5 ID25
value vs. TJ
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
VSD - Volts
0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID - Amperes
0
20
40
60
80
100
VDS - Volts
10 100 1000
ID - Amperes
0.1
1
10
100
Pulse Width - Seconds
10-4 10-3 10-2 10-1 100101
R(th)JC - K/W
0.001
0.010
0.100
1.000
VDS - Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
100
1000
10000
Gate Charge - nC
0 100 200 300 400 500
VGS - Volts
0
2
4
6
8
10
12
Crss
Coss
VDS = 500 V
ID = 18 A
IG = 10 mA f = 100kHz
TC = 25OC
10
ms
1 ms
DC
TJ = 125OC
TJ = 25OC
0.1 ms
Ciss
144
IXFN36N100
30000
IXFN 36N100
Figure 7. Gate Charge Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure 10. Transient Thermal Resistance
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