DMHC4035LSDQ 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device BVDSS N-Channel 40V P-Channel -40V Features RDS(ON) Max ID Max TA = +25C 45m @ VGS = 10V 4.5A 58m @ VGS = 4.5V 4A 65m @ VGS = -10V -3.7A 100m @ VGS = -4.5V -2.9A Description and Applications Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) P2G N2D/P2D P1G SO-8 2 x N + 2 x P Channels in An SO-8 Package Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data This new generation complementary MOSFET H-Bridge features 2N and 2 P channels in an SO-8 package. Qualified to AEC-Q101 the H bridge is ideally suited to driving : Solenoids DC Motors Audio Outputs P1S/P2S NEW PRODUCT INFORMATION ADVANCE NEW PRODUCT Product Summary H-Bridge N2G N1S/N2S N1D/P1D N1G Top View Pin Configuration Top View Internal Schematic Ordering Information (Note 5) Part Number DMHC4035LSDQ-13 Notes: Compliance Automotive Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 8 5 = Manufacturer's Marking C4035LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 18 = 2018) WW = Week (01 to 53) C4035LS YY WW 1 DMHC4035LSDQ Document number: DS37219 Rev. 2 - 2 4 1 of 9 www.diodes.com March 2018 (c) Diodes Incorporated DMHC4035LSDQ Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit PD 1.5 W RJA 85 53 C/W RJC 15 TJ, TSTG -55 to +150 C Total Power Dissipation (Note 6) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) NEW PRODUCT INFORMATION ADVANCE NEW PRODUCT Thermal Resistance, Junction to Case Operating and Storage Temperature Range Maximum Ratings N-CHANNEL (@TA = +25C, unless otherwise specified.) Symbol Value Unit Drain-Source Voltage Characteristic VDSS 40 V Gate-Source Voltage VGSS 20 V A Continuous Drain Current (Note 6) VGS = 10V Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25C TA = +70C ID 4.5 3.5 t<10s TA = +25C TA = +70C ID 5.8 4.5 A Steady State TA = +25C TA = +70C ID 4 3.1 A t<10s TA = +25C TA = +70C ID 5.1 4 A IS 1.5 A IDM 25 A Value Unit Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Maximum Ratings P-CHANNEL (@TA = +25C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS 20 V A Continuous Drain Current (Note 6) VGS = -10V Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25C TA = +70C ID -3.7 -2.9 t<10s TA = +25C TA = +70C ID -4.8 -3.8 A Steady State TA = +25C TA = +70C ID -2.9 -2.3 A t<10s TA = +25C TA = +70C ID -3.9 -3.0 A IS -1.5 A IDM -15 A Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Note: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMHC4035LSDQ Document number: DS37219 Rev. 2 - 2 2 of 9 www.diodes.com March 2018 (c) Diodes Incorporated DMHC4035LSDQ Electrical Characteristics N-CHANNEL (@TA = +25C, unless otherwise specified.) NEW PRODUCT INFORMATION ADVANCE NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 40 -- VGS = 0V, ID = 250A IDSS -- -- -- 1 V Zero Gate Voltage Drain Current A VDS = 40V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS -- -- 100 nA VGS = 20V, VDS = 0V V VDS = VGS, ID = 250A Static Drain-Source On-Resistance VGS(TH) RDS(ON) 1 -- 3 -- 26 45 -- 35 0.7 58 1 574 87.8 -- VSD -- Ciss -- Coss Crss -- -- Gate Resistance Rg Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge m VGS = 10V, ID = 3.9A VGS = 4.5V, ID = 3.5A V VGS = 0V, IS = 1.25A pF 38.7 -- -- VDS = 20V, VGS = 0V, f = 1MHz -- 1.6 -- VDS = 0V, VGS = 0V, f = 1MHz Qg -- 5.9 -- Qg -- -- -- -- -- -- -- -- -- 12.5 1.7 -- Qgs nC VDS = 20V, ID = 3.9A ns VDD = 20V, VGS = 10V, RL = 20, RG = 6 ns nC IF = 3.9A, di/dt = 500A/s Qgd tD(ON) tR tD(OFF) tF tRR QRR 2.2 3.1 2.6 15 5.5 6.5 1.2 -- -- -- -- -- -- -- -- Electrical Characteristics P-CHANNEL (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max Unit BVDSS -40 -- IDSS IGSS -- -- -- -- -- -1 V A 100 nA V VGS(TH) RDS(ON) -1 -- -3 -- 49 65 -- 73 100 -0.7 -1.2 V m Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD -- Ciss -- 587 -- pF Output Capacitance Coss -- 88.1 -- pF Reverse Transfer Capacitance Gate Resistance Crss -- pF Total Gate Charge (VGS = -4.5V) -- -- 40.2 12.3 -- Rg Qg Total Gate Charge (VGS = -10V) Gate-Source Charge Qg Qgs Qgd Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: tD(ON) tR tD(OFF) tF tRR QRR 5.4 -- -- nC -- 11.1 -- nC -- 1.5 -- nC -- -- -- -- -- -- -- 2 3.6 2.9 36.3 15.3 15.5 16.9 -- -- -- -- -- -- -- nC ns ns ns ns ns nC Test Condition VGS = 0V, ID = -250A VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250A VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -3.3A VGS = 0V, IS = -1A VDS = -20V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -20V, ID = -4.2A VDD = -15V, VGS = -10V, RG = 6, ID = -1A IF = -4.2A, di/dt = 500A/s 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMHC4035LSDQ Document number: DS37219 Rev. 2 - 2 3 of 9 www.diodes.com March 2018 (c) Diodes Incorporated DMHC4035LSDQ Typical Characteristics - N-CHANNEL 20 18 20 VGS = 3.5V VGS = 10V VGS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 )A ( 14 T N E 12 R R U 10 C N I 8 A R D ,D 6 I 4 VGS = 4.5V 12 VGS = 4.0V 10 VGS = 3.0V 8 6 4 VGS = 2.5V VGS = 2.3V 2 TA = 150C TA = 125C 2 TA = 85C TA = 25C TA = -55C ) ( E C N A T S IS E R -N O E C R U O S -N IA R D ,N ) O ( S D R 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 0.045 0.04 VGS = 4.5V 0.035 VGS = 10V 0.03 0.025 0.02 0.015 0.01 0 2 0 5 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.2 0.18 ID = 3.9A 0.16 0.14 ID = 3.5A 0.12 0.1 0.08 0.06 0.04 0.02 00 20 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 1.8 0.08 VGS = 4.5V TA = 150C 0.07 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT INFORMATION ADVANCE NEW PRODUCT 16 14 VDS = 5.0V 18 TA = 125C TA = 85C 0.05 TA = 25C 0.04 0.03 TA = -55C 0.02 1.6 VGS = 10 V ID = 10A 1.4 VGS = 5V ID = 5A 1.2 1 0.8 0.01 0 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMHC4035LSDQ Document number: DS37219 Rev. 2 - 2 20 4 of 9 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature March 2018 (c) Diodes Incorporated 2.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.08 )V ( E G A 2 T L O V D L O H S 1.5 E R H T E T A G 1 , )h 0.07 0.06 VGS = 5V ID = 5A 0.05 0.04 VGS = 10 V ID = 10A 0.03 0.02 ID = 1mA ID = 250A (tS G 0.01 V 0 -50 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Junction Temperature 1000 20 C iss IS, SOURCE CURRENT (A) 16 ) A ( 14 T N E R 12 R U C 10 E C R 8 U O S 6 ,S I 4 CT, JUNCTION CAPACITANCE (pF) 18 TA = 150C TA = 25C TA = 125C TA = 85C TA = -55C 100 Coss C rss 2 0 0 10 0.3 0.6 0.9 1.2 1.5 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 10 VDS = 20V ID = 3.9A 8 ID, DRAIN CURRENT (A) VVGS THRESHOLD VOLTAGE (V)(V) GATE-SOURCE VOLTAGE GS,GATE NEW PRODUCT INFORMATION ADVANCE NEW PRODUCT DMHC4035LSDQ 6 4 2 0 0 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 T 150 C J(max) = 150 PW = 1ms PW = 100 100s TA = 25 25 C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMHC4035LSDQ Document number: DS37219 Rev. 2 - 2 14 5 of 9 www.diodes.com 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 March 2018 (c) Diodes Incorporated DMHC4035LSDQ Typical Characteristics - P-CHANNEL 15 15 VGS = -10V VDS = -5.0V VGS = -3.5V VGS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 12 )A ( T N E R 9 R U C N IA 6 R D ,D -I 3 9 VGS = -3.0V 6 VGS = -2.5V 3 TA = 150C TA = 125C VGS = -2.0V 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 13 Typical Output Characteristics 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.2 0.18 0.16 0.14 0.12 VGS = -4.5V 0.1 0.08 0.06 VGS = -10V 0.04 0.02 0 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 15 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 85C TA = 25C TA = -55C 0 0 1 2 3 4 -VGS , GATE-SOURCE VOLTAGE (V) Figure 14 Typical Transfer Characteristics 5 0.5 ID = -4.2A 0.45 0.4 0.35 0.3 0.25 ID = -3.3A 0.2 0.15 0.1 0.05 20 0 0 2 4 6 8 10 12 14 16 18 -VGS, GATE-SOURCE VOLTAGE (V) Figure 16 Typical Transfer Characteristics 20 1.8 0.2 VGS = -4.5V 0.18 0.16 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) NEW PRODUCT INFORMATION ADVANCE NEW PRODUCT 12 TA = 150C 0.14 TA = 125C 0.12 T A = 85C TA = 25C 0.1 0.08 TA = -55C 0.06 0.04 1.6 VGS = -10V ID = -10A 1.4 1.2 VGS = -5V ID = -5A 1 0.8 0.02 0 0 3 6 9 12 -ID, DRAIN SOURCE CURRENT (A) Figure 17 Typical On-Resistance vs. Drain Current and Temperature DMHC4035LSDQ Document number: DS37219 Rev. 2 - 2 15 6 of 9 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 18 On-Resistance Variation with Temperature March 2018 (c) Diodes Incorporated 2 -VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 0.15 )V ( E G A T L O V D L O H S E R H T E T A G , )H 0.12 VGS = - 5V ID = -5A 0.09 VGS = -10V ID = -10A 0.06 0.03 T ( S G 1.8 1.6 -ID = 250A 1.4 -ID =1mA 1.2 1 0.8 V 0 -50 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 19 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (C) Figure 20 Gate Threshold Variation vs. Ambient Temperature 15 1000 CT, JUNCTION CAPACITANCE (pF) -IS, SOURCE CURRENT (A) Ciss 12 9 TA= 85C 6 TA= 25C TA= 125C TA= 150C 3 0 TA= -55C 0 100 Coss Crss 10 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 21 Diode Forward Voltage vs. Current 0 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 22 Typical Junction Capacitance 40 100 10 8 -ID, DRAIN CURRENT (A) -V GS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT INFORMATION ADVANCE NEW PRODUCT DMHC4035LSDQ 6 VDS = -20V ID = -4.2A 4 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms 0.1 T 150C J(max) = 150 PW = 1ms PW = 100 100s C TA = 25 25 VGS = -4.5V Single Pulse DUT on 1 * MRP Board 2 0 10 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 23 Gate-Charge Characteristics DMHC4035LSDQ Document number: DS37219 Rev. 2 - 2 12 7 of 9 www.diodes.com 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 24 SOA, Safe Operation Area 100 March 2018 (c) Diodes Incorporated DMHC4035LSDQ r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT INFORMATION ADVANCE NEW PRODUCT 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 110 /W 110C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 25 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. E 1 b 7 A R 1 0. c 4 3 A1 e Q 45 All 9 ( E1 h s) side E0 L Gauge Plane Seating Plane D SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMHC4035LSDQ Document number: DS37219 Rev. 2 - 2 X 8 of 9 www.diodes.com March 2018 (c) Diodes Incorporated DMHC4035LSDQ IMPORTANT NOTICE NEW PRODUCT INFORMATION ADVANCE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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