sikinsth sargte. Mert posrne maa ot nat Phitips Semiconductors Band-switching diode FEATURES Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. 1.0 pF max. 0.7 Q. APPLICATION Band switching. Low diode forward resistance: Product specification eee ee BAT18 Ceeeeeeeeee eer reeee eee e eee eee DESCRIPTION PINNING Planar high performance PIN DESCRIPTION band-switching diode in a smail 1 ode rectangular plastic SOT23 SMD an package. 2 not connected 3 cathode 2 2 - 4) 1 nc. 3 3 MAM185 Marking code: A2. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN MAX. UNIT Vr continuous reverse voltage _ 35 Vv Ir continuous forward current - 100 mA Tstg storage temperature ~55 +125 C Tj junction temperature ~ 125 C ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Ve forward voltage le = 100 mA; see Fig.2 - 1.2 Vv Ip reverse current see Fig.3 Vp = 20V - 100 nA Vr = 20 V; T; = 60 C - 1 BA Ca diode capacitance f = 1 MHz; Vp = 20 V; see Fig.4 0.8 1.0 | pF 'p diode forward resistance Ie = 5 mA; f = 200 MHz; see Fig.5 0.5 0.7 |Q2 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rit j-tp thermal resistance from junction to tie-point 330 KAW Rihj-a thermal resistance from junction to ambient | note 1 500 KAW Note 1. Device mounted on a FR4 printed-circuit board. 1996 Mar 13 3-16Philips Semiconductors Product specification Band-switching diode BAT18 GRAPHICAL DATA MBG31I2 100 (mA) 50 0 0.5 1 Vv F a) 15 (1) T= 60 C; typical values. (2) T; = 25 C; typicat values. (3) T, = 25 C; maximum values. Fig.2 Forward current as a function of forward voltage. Vp = 20 V. Solid line: maximum values. Dotted line: typical values. Fig.3 Reverse current as a function of junction temperature. MBG313 10? 107! 1 10 Vr () f= 1 MHz; T; = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. MBG314 10? 1 10 ig (mA) f = 200 MHz; T; = 25 C. Fig.5 Diode forward resistance as a function of forward current; typical values. 1996 Mar 13