3
Motorola Bipolar Power Transistor Device Data
20
2.0
Figure 3. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
16
10
0.02 20 120
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25
°
C
IC, COLLECTOR CURRENT (AMP)
dc
100
µ
s
5.0 10 150
1.0
50
0.1
5 ms
MJE15028
MJE15029
MJE15030
MJE15031
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
The data of Figures 3 and 4 is based on T J(pk) = 150
_
C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_
C. TJ(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
8.0
0
Figure 4. Reverse–Bias Switching
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
0120 140
IC, COLLECTOR CURRENT (AMP)
5 V
VBE(off) = 9 V
100 110 150
3.0
130
2.0
1.0
VR, REVERSE VOLTAGE (VOLTS)
10 150
500
1000
50
Figure 5. Capacitances
200
10030107.05.01.5
C, CAPACITANCE (pF)
3.0
20
50
Figure 6. Small–Signal Current Gain
f, FREQUENCY (MHz)
1.0 3.0 10
20
100
hfe, SMALL SIGNAL CURRENT GAIN
2.0 7.0
5.00.5 5.0
50
30
10
0.7
NPN
Figure 7. Current Gain–Bandwidth Product
IC, COLLECTOR CURRENT (AMP)
0.5 2.0
60
100
fT, CURRENT GAIN–BANDWIDTH PRODUCT (MHz)
1.0 10
20
0.1 5.0
90
50
0.2
IC/IB = 10
TC = 25
°
C
3 V
1.5 V
PNP
(NPN)
(PNP)
VCE = 10 V
IC = 0.5 A
TC = 25
°
C
Cib (NPN)
Cob (PNP)
100
30
0
10
0 V
Cib (PNP)
Cob (NPN)