one in, HIGH VOLTAGE a PNP SILICON TRANSISTORS 2N3637 GEOMETRY 480 * High Volfageto 175 V. VcEeo * Switching and Amplifier Applications MAXIMUM RATINGS Rating symboi | 2NS8* ees | unit Collector-Emitter Voltage VcEo 440 175 Vde Collector-Base Voltage Vos 140 175 Vde Emitter-Base Voltage - Ves 50 Vde Collector Current Ig 10 Ade EMITTER. Total Device Dissipation @T, =25C Pp 1.0 Wait Derate above 25C 5. mc ves Total Device Dissipation @T,,= 25C Pp 50 Walts Devate above 25C 286 mre Coltector Connected to Case All Bemenscoms on inches Oparating and Storage Junction Temperature Range } Ty. Teg -65 to +200 c ELECTRICAL CHARACTERISTICS AT 25C FREE-AIR TEMPERATURE PARAMETER Smait-Signal Common-Emitter Forward Current Transter Ratio Reverse Tranater Ratio Common-Emiiter Output TEST CONDITIONS Vog= ~ 10V, Ig = - 10 mA, f= 1 kHz NOTE: These parameters must be measured using pulse techniques. tw 300s, duty cycie<2%. CRYSTALONCS 2805 Veterans Hi hw. a Suite 14 gnway . . Ronkonkoma, N.Y.11779* 65i t ELECTRICAL CHARACTERISTICS AT 25C FREE-AIR TEMPERATURE PARAMETER TEST CONDITIONS Me Forward Current Transfer Ratio = 30V, Ig= 30 mA, f= 100 MHz 1s 2 65 115 80 Cobo Output Capacitance =-20V, f= 100 kHz [pq input Capacitance = ~1V, ig=0, t= 100 kHz =~10V n= Rg=1kO, fat kHz = IS = 4V, See Figure 1 =5 mA, See Figure 1 ae OUTPUT (SEE NOTE 2) INPUT 20pF (SEE NOTE 1) 502 TEST CIRCUIT L *Vpp= 4.0 Vde FOR ton, 4.1 Vdc FOR t off AT POINT A TURN-OFF VOLTAGE WAVEFORMS NOTES TURN-ON VOLTAGE WAVEFORMS, 1. The rise time (t) and fall time {ty) of the 2 85 Input pulse shailbe < 2 nsec. duly cycle < 2%. pulse width = 20 usec. 2. Output monitored with oscilloscope with following chatacter- letice Zin > 1 Mo. 4< 1 nsec. FIGURE 1, Switching-time test circutt. CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779