©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC237/238/239
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCES Collector-Emitter Voltage : BC237
: BC238/239 50
30 V
V
VCEO Collector-Emitter Voltage : BC237
: BC238/239 45
25 V
V
VEBO Emitter-Base Voltage : BC237
: BC238/239 6
5 V
V
ICCollector Current (DC) 100 mA
PCCollector Power Dissipation 500 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BVCEO Collector-Emitt er Breakdown Voltage
: BC237
: BC238/239 IC=2mA, IB=0 45
25 V
V
BVEBO Emitter Base Breakdown Voltage
: BC237
: BC238/239 IE=1µA, IC=0
6
5V
V
ICES Collector Cut-off Current
: BC237
: BC238/239 VCE=50V, VBE=0
VCE=30V, VBE=0 0.2
0.2 15
15 nA
nA
hFE DC Current Gain VCE=5V, IC= 2 m A 1 2 0 8 0 0
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA 0.07
0.2 0.2
0.6 V
V
VBE (sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA 0.73
0.87 0.83
1.05 V
V
VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA 0.55 0.62 0.7 V
fTCurrent Gain Bandwidth Product VCE=3V, IC=0.5mA, f=100MHz
VCE=5V, IC=10mA, f=10 0MHz 150 85
250 MHz
MHz
Cob Output Capa cita nce VCB=10V, IE=0, f= 1M H z 3.5 6 pF
Cib Input Bas e Capacitance VEB=0.5V, IC=0, f= 1M H z 8 p F
NF
Noise Figure : BC237/238
: BC239
: BC239
VCE=5V, IC=0.2mA,
f=1KH z R G=2KΩ
VCE=5V, IC=0.2mA
RG=2KΩ, f=30~15KHz
210
4
4
dB
dB
dB
Classification A B C
hFE 120 ~ 220 180 ~ 460 380 ~ 800
BC237/238/239
Switching and Amplifier Applications
• Low Noise: BC239
1. Collector 2. Base 3. Emitter
TO-92
1
©2002 Fairchild Semiconductor Corporation
BC237/238/239
Rev. A2, August 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Transfer Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5 . Output Capac i tance Figur e 6. Current Gain Bandwid th Product
02468101214161820
0
20
40
60
80
100
IB = 50 µA
IB = 100µA
IB = 150µA
IB = 200µA
IB = 250µA
IB = 300µA
IB = 350µA
IB = 400µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
VCE = 5V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
1
10
100
1000
VCE = 5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
10000
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat )[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
1 10 100 1000
0.1
1
10
100
f=1MHz
IE = 0
Cob[pF], CAP AC ITANC E
VCB[V], COLLECTOR-BASE VOLTA GE
0.1 1 10 100
1
10
100
1000
VCE = 5V
fT, CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
Package Dimensions
BC237/238/239
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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Definition of Terms
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