MJD122
MJD127
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■STMicroelectronicsPREFERRED
SALESTYPES
■LOW BASE-DRIVE REQUIREMENTS
■INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
■SURFACE-MOUNTING TO-252 (DPAK)
POWERPACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
■ELECTRICAL SIMILAR TO TIP122 AND
TIP127
APPLICATIONS
■GENERALPURPOSESWITCHING AND
AMPLIFIER.
DESCRIPTION
The MJD122 and MJD127 form complementary
NPN - PNP pairs.
They are manufactured using Epitaxial Base
technologyfor cost-effectiveperformance.
INTERNAL SCHEMATIC DIAGRAM
January 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN MJD122
PNP MJD127
VCBO Collector-Base Voltage (IE=0) 100 V
V
CEO Collector-Emitter Voltage (IB=0) 100 V
V
EBO Emitter-Base Voltage (IC=0) 5 V
I
CCollector Current 5 A
ICM Collector Peak Current 8 A
IBBase Current 100 mA
Ptot Total Dissipation at Tcase ≤ 25 oC20 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values arenegative.
13
DPAK
TO-252
(Suffix ”T4”)
R1Typ. = 10 KΩR2Typ. = 150 Ω
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 6.25
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE=0) V
CB =100V 10 µA
I
CEO Collector Cut-off
Current (IB=0) V
CE =50V 10 µA
I
CEX Collector Cut-off
Current VCE =100V V
BE =-1.5V
V
CE =100V V
BE =-1.5V T
C=125
o
C10
500 µA
µA
IEBO Emitter Cut-off
Current (IC=0) V
EB =5V 2 mA
V
CEO(sus) Collector-Emitter
Sustaining Voltage IC= 30 mA 100 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC=4A I
B=16mA
I
C=8A I
B=80mA 2
4V
V
V
BE(sat)∗Base-Emitter
Saturation Voltage IC=8A I
B=80mA 4.5 V
V
BE(on)∗Base-Emitter Voltage IC=4A V
CE =4V 2.8 V
h
FE∗DC Current Gain IC=4A V
CE =4V
I
C=8A V
CE =4V 1000
100 12000
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤2%
For PNP typevoltage and current values are negative.
Safe Operating Area DeratingCurve
MJD122 MJD127
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DCCurrent Gain (NPNtype)
Collector Emitter SaturationVoltage (NPN type)
Base Emitter SaturationVoltage (NPN type)
DC Current Gain(PNP type)
Collector EmitterSaturation Voltage(PNP type)
BaseEmitter Saturation Voltage(PNP type)
MJD122 MJD127
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Base Emitter On Voltage (NPN type)
FreewheelDiode Forward Voltage (NPN type)
BaseEmitter On Voltage (PNP type)
FreewheelDiode Forward Voltage(PNP type)
Switching Time Resistive Load (NPN type) Switching Time resistive Load (PNPtype)
MJD122 MJD127
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
==
D
L2
L4
13
==
B
E
==
B2
G
2
A
C2
C
H
A1
DETAIL ”A”
A2
DETAIL ”A”
TO-252 (DPAK) MECHANICAL DATA
0068772-B
MJD122 MJD127
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
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are not authorized for useas critical components in life support devices or systems without express written approval of STMicroelectronics.
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MJD122 MJD127
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