Semiconductor Group 1 Dec-11-1996
BFR 182W
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 1mA to 20mA
•
f
T = 8GHz
F
= 1.2dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFR 182W RGs Q62702-F1492 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CEO 12 V
Collector-emitter voltage
V
CES 20
Collector-base voltage
V
CBO 20
Emitter-base voltage
V
EBO 2
Collector current
I
C 35 mA
Base current
I
B 4
Total power dissipation
T
S ≤ 90 °C
P
tot 250 mW
Junction temperature
T
j 150 °C
Ambient temperature
T
A- 65 ... + 150
Storage temperature
T
stg - 65 ... + 150
Thermal Resistance
Junction - soldering point 1)
R
thJS ≤ 240 K/W
1)
T
S is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 2 Dec-11-1996
BFR 182W
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C = 1 mA,
I
B = 0
V
(BR)CEO 12 - - V
Collector-emitter cutoff current
V
CE = 20 V,
V
BE = 0
I
CES - - 100 µA
Collector-base cutoff current
V
CB = 10 V,
I
E = 0
I
CBO - - 100 nA
Emitter-base cutoff current
V
EB = 1 V,
I
C = 0
I
EBO - - 1 µA
DC current gain
I
C = 10 mA,
V
CE = 8 V
h
FE 50 100 200 -
Semiconductor Group 3 Dec-11-1996
BFR 182W
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
I
C = 15 mA,
V
CE = 8 V,
f
= 500 MHz
f
T
6 8 - GHz
Collector-base capacitance
V
CB = 10 V,
f
= 1 MHz
C
cb - 0.4 0.65 pF
Collector-emitter capacitance
V
CE = 10 V,
f
= 1 MHz
C
ce - 0.24 -
Emitter-base capacitance
V
EB = 0.5 V,
f
= 1 MHz
C
eb - 0.6 -
Noise figure
I
C = 3 mA,
V
CE = 8 V,
Z
S =
Z
Sopt
f
= 900 MHz
f
= 1.8 GHz
F
-
- 1.9
1.2 -
-
dB
Power gain 1)
I
C = 10 mA,
V
CE = 8 V,
f
= 900 MHz
Z
S =
Z
Sopt,
Z
L =
Z
Lopt
G
ms
- 19 -
Power gain 2)
I
C = 10 mA,
V
CE = 8 V,
f
= 1.8 GHz
Z
S =
Z
Sopt,
Z
L =
Z
Lopt
G
ma
- 12.5 -
Transducer gain
I
C = 10 mA,
V
CE = 8 V,
Z
S =
Z
L= 50 Ω
f
= 900 MHz
f
= 1.8 GHz
|
S
21e|2
-
- 9.5
15 -
-
1)
G
ms = |
S
21/
S
12|
2)
G
ma = |
S
21/
S
12| (k-(k2-1)1/2)
Semiconductor Group 4 Dec-11-1996
BFR 182W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS = 4.8499 fA
VAF = 21.742 V
NE = 0.91624 -
VAR = 2.2595 V
NC = 0.5641 -
RBM = 3.4217 Ω
CJE = 8.8619 fF
TF = 22.72 ps
ITF = 6.5523 mA
VJC = 1.0132 V
TR = 1.7541 ns
MJS = 0-
XTI = 3-
BF = 84.113 -
IKF = 0.14414 A
BR = 10.004 -
IKR = 0.039478 A
RB = 2.8263 Ω
RE = 2.1858 Ω
VJE = 1.0378 V
XTF = 0.43147 -
PTF = 0 deg
MJC = 0.31068 -
CJS = 0 fF
XTB = 0 -
FC = 0.64175 -
NF = 0.56639 -
ISE = 8.4254 fA
NR = 0.54818 -
ISC = 5.9438 fA
IRB = 0.071955 mA
RC = 1.8159 Ω
MJE = 0.40796 -
VTF = 0.34608 V
CJC = 490.25 fF
XCJC = 0.19281 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit: LBI = 0.57 nH
LBO = 0.4 nH
LEI = 0.43 nH
LEO = 0.5 nH
LCI = 0nH
LCO = 0.41 nH
CBE = 61 fF
CCB = 101 fF
CCE = 175 fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group 5 Dec-11-1996
BFR 182W
Total power dissipation
P
tot =
f
(
T
A*,
T
S)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax/
P
totDC =
f
(
t
p)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
-
P
totmax/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 6 Dec-11-1996
BFR 182W
Collector-base capacitance
C
cb =
f
(
V
CB)
V
BE =
v
be = 0,
f
= 1MHz
04812 16 V 22
V
R
0.0
0.1
0.2
0.3
0.4
0.5
0.6
pF
0.8
C
cb
Transition frequency
f
T =
f
(
I
C)
V
CE = Parameter
0 5 10 15 mA 25
I
C
0
1
2
3
4
5
6
7
8
GHz
10
fT
10V
8V
5V
3V
2V
1V
0.7V
Power Gain
G
ma,
G
ms =
f
(
I
C)
f
= 0.9GHz
V
CE = Parameter
04812 16 20 mA 26
I
C
8
10
12
14
16
dB
20
G
10V
3V
2V
1V
0.7V
Power Gain
G
ma,
G
ms =
f
(
I
C)
f
= 1.8GHz
V
CE = Parameter
2 6 10 14 18 mA 26
I
C
0
2
4
6
8
10
dB
14
G
10V
3V
2V
1V
0.7V
Semiconductor Group 7 Dec-11-1996
BFR 182W
Power Gain
G
ma,
G
ms =
f
(
V
CE):_____
|
S
21|2 =
f
(
V
CE):---------
f
= Parameter
02468V12
V
CE
0
2
4
6
8
10
12
14
16
dB
20
G
0.9GHz
1.8GHz
0.9GHz
1.8GHZ
I
C=10mA
Intermodulation Intercept Point
IP
3=
f
(
I
C)
(3rd order, Output,
Z
S=
Z
L=50Ω)
V
CE = Parameter,
f
= 900MHz
0 5 10 15 20 mA 30
I
C
0
5
10
15
20
dBm
30
IP
3
8V
5V
3V
2V
1V
Power Gain
G
ma,
G
ms =
f
(
f
)
V
CE = Parameter
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
0
5
10
15
20
25
dB
35
G
10V
1V
0.7V
I
C=10mA
Power Gain |
S
21|2=
f
(
f
)
V
CE = Parameter
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
0
5
10
15
20
dB
30
S
21
10V
1V
0.7V
I
C=10mA
