3901003881
Rev 016
Features and
Benefits
Operating voltage range fro
m
18V
High magnetic sensitivity –
M
purpose
CMOS
t
echnology
Chopper-stabilized amplifier
Low current consump
t
ion
Open drain ou
t
pu
t
Thin SOT23 3L and flat TO-
9
both RoHS Compliant
packages
Ordering Code
Product Code
Temperature Code Package Code
US3881 E
US3881 K
US3881 L
US3881 E
US3881 K
US3881 L
Legend:
Temperature Code:
L for Temperature Range
E for Temperature Range
K for Temperature Range
Package Code:
UA for TO
Option Code:
xxx
Packing Form:
RE for Reel
Ordering example:
US3881KUA
1 Functional Diagram
Low Voltage & Hi
gh
Page 1 of 11
m
2.2V to
M
ul
t
i-
s
t
age
9
2 3L
Application
Exa
m
Automotive, Cons
u
Solid-state swi
t
ch
Brushless DC mo
t
Speed de
t
ec
t
ion
Linear position de
t
Angular position
d
Proximity de
t
ec
t
io
n
Temperature Code Package Code
Option Code Packing Form Code
UA AAA-000
UA AAA-000
UA AAA-000
SE AAA-000
SE AAA-000
SE AAA-000
L for Temperature Range
-40°C to 150°C
E for Temperature Range
-40°C to 85°C
K for Temperature Range
-40°C to 125°C
UA for TO
-92(Flat), SE for TSOT
xxx
-000: Standard version
RE for Reel
, BU for Bulk
US3881KUA
-AAA-000-BU
2 General
Descriptio
n
The Melexis US3881 is
a
designed in mixed signal CM
O
The device integrates a vol
t
sensor with dynamic offset
c
Schmitt trigger and an open-d
r
in a single package
.
The low operating voltage an
d
temperature range make i
t s
automotive, industrial and co
n
applica
t
ions
.
The devices are delivered in
a
Transistor (TSOT) for surface
in a Plastic Single In Line (TO
hole moun
t.
Both 3-lead packages are RoH
S
U
S
38
8
1
Hall
Lat
ch
gh
Sensitivity
Data Shee
t
Mar/12
m
ples
u
mer and
I
ndus
t
rial
t
or commu
t
a
t
ion
t
ec
t
ion
d
e
t
ec
t
ion
n
Option Code Packing Form Code
BU
BU
BU
RE
RE
RE
n
a
Hall-effect la
t
ch
O
S
t
echnology
.
t
age regulator, Hall
c
ancellation sys
t
em
,
r
ain output driver, all
d
extended choice o
f
t s
uitable for use in
n
sumer low vol
t
age
a
Thin Small Ou
t
line
mount process and
-
92 flat) for
t
hrough-
S
complian
t.
U
S
38
8
1
Hall
Lat
ch
Low Voltage & High
Sensitivity
3901003881
Rev 016
Page 2 of 11 Data Shee
t
Mar/12
Table of
Contents
1 Functional Diagram
........................................................................................................ 1
2 General Description ........................................................................................................ 1
3 Glossary of Terms .......................................................................................................... 3
4 Absolute Maximum Ratings ........................................................................................... 3
5 Pin Definitions and Descriptions ................................................................................... 3
6 General Electrical Specifications .................................................................................. 4
7 Magnetic Specifications ................................................................................................. 4
8 Output Behaviour versus Magnetic Pole ...................................................................... 4
9 Detailed General Description ......................................................................................... 5
10 Unique Features ............................................................................................................ 5
11 Performance Graphs .................................................................................................... 6
12 Application Information ................................................................................................ 7
12.1 Typical Three-Wire Application Circuit
....................................................................................................
7
12.2 Two-Wire Circuit
......................................................................................................................................7
12.3 Automotive and Harsh, Noisy Environments Three-Wire Circuit
............................................................
7
13 Application Comments ................................................................................................. 7
14 Standard information regarding manufacturability of Melexis products with
different soldering processes........................................................................................... 8
15 ESD Precautions ........................................................................................................... 8
16 Package Information..................................................................................................... 9
16.1 SE Package (TSOT-3L)
...........................................................................................................................
9
16.2 UA Package (TO-92 flat)
.......................................................................................................................
10
17 Disclaimer .................................................................................................................... 11
U
S
38
8
1
Hall
Lat
ch
Low Voltage & High
Sensitivity
3901003881
Rev 016
Page 3 of 11 Data Shee
t
Mar/12
3 Glossary of
Terms
MilliTesla (mT), Gauss Units of magnetic flux densi
t
y
:
1mT = 10 Gauss
RoHS Restriction of Hazardous Subs
t
ances
TSOT Thin Small Outline Transistor (TSOT package) – also referred with the Melexis
package code “SE”
ESD Electro-Static Discharge
BLDC Brush-Less Direc
t
-Curren
t
4 Absolute Maximum
Ratings
Parame
t
er
Symbol
Value Uni
t
s
S
upp
l
y
V
o
l
t
a
g
e
V
DD
20
V
S
upp
l
y
Current
I
DD
50
m
A
Output
V
o
l
t
a
g
e
V
O
UT
20
V
Output
Current
I
O
UT
50
m
A
Storage Temperature
Range
T
S
-50
to 150
°
C
M
a
x
i
m
u
m
J
unc
t
i
on
Temperature
T
J
165
°
C
Table 1: Absolute maximum ra
t
ings
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolu
t
e-maximum-
rated conditions for extended periods may affect device reliabili
t
y
.
Operating Temperature Range Symbol Value Uni
t
s
Temperature
S
u
ff
i
x
“
E
”
T
A
-40
to 85
°
C
Temperature
S
u
ff
i
x
“
K
”
T
A
-40
to 125
°
C
Temperature
S
u
ff
i
x
“
L
”
T
A
-40
to 150
°
C
5 Pin Definitions and
Descriptions
SE Pin № UA Pin № Name Type Func
t
ion
1
1
V
DD
S
upp
l
y
S
upp
l
y
V
o
l
t
a
g
e
p
i
n
2
3
OUT
Output
Open
Dr
a
i
n
Output
p
i
n
3
2
GND
Ground
Ground
p
i
n
Table 2: Pin definitions and descrip
t
ions
SE package UA
package
U
S
38
8
1
Hall
Lat
ch
Low Voltage & High
Sensitivity
3901003881
Rev 016
Page 4 of 11 Data Shee
t
Mar/12
A
D
D
A
D
D
6 General Electrical
Specifications
DC Operating Parameters T = 25
o
C, V = 12V (unless otherwise speci
f
ied)
Parameter Symbol Test Conditions Min Typ Max Uni
t
s
S
upp
l
y
V
o
l
t
a
g
e
V
DD
O
p
e
r
a
t
i
ng
2.2
18
V
S
upp
l
y
Current
I
DD
B
< B
RP
1.5
2.5
5
m
A
Output
S
a
t
u
r
a
t
i
on
V
o
l
t
a
g
e
V
D
S
on
I
OUT
=
20mA, B
> B
OP
0.4
0.5
V
Output
L
ea
k
a
g
e
Current
I
O
FF
B
<
B
RP,
V
OUT
=
24
V
0.01
10
µ
A
Output R
i
s
e
T
i
m
e
t
r
R
L
=
1kΩ, C
L
= 20pF
0.25
µ
s
Output F
a
ll
T
i
m
e
t
f
R
L
=
1kΩ, C
L
= 20pF
0.25
µ
s
M
a
x
i
m
u
m
S
w
i
t
ch
i
ng
Frequency
F
S
W
10
K
H
z
SE Package
T
h
e
r
m
a
l
R
e
s
i
s
t
a
nc
e
R
TH
S
i
ng
l
e
l
a
y
e
r
(1S)
Jedec board
301
°C/W
UA
Package
T
h
e
r
m
a
l
R
e
s
i
s
t
a
nc
e
R
TH
200
°C/W
Table 3: Electrical speci
f
ica
t
ions
7 Magnetic
Specifications
DC Operating Parameters T = 25
o
C, V = 2.2V to 18V (unless otherwise speci
f
ied)
Parameter Symbol Test Conditions Min Typ Max Uni
t
s
O
p
e
r
a
t
i
ng
P
o
i
n
t
B
OP
E spec.,
T
A
= 85°C
1
5
9
m
T
R
e
l
ea
s
e
P
o
i
n
t
B
RP
-
9
-
5
-
1
m
T
Hy
s
t
e
r
e
s
i
s
B
H
Y
S
T
5.5
10
12
m
T
O
p
e
r
a
t
i
ng
P
o
i
n
t
B
OP
L
spec.,
T
A
= 150°C
1
5
9
m
T
R
e
l
ea
s
e
P
o
i
n
t
B
RP
-
9
-
5
-
1
m
T
Hy
s
t
e
r
e
s
i
s
B
H
Y
S
T
5.5
10
12
m
T
Table 4: Magnetic speci
f
ica
t
ions
8 Output Behaviour versus Magnetic
Pole
o o
DC Operating Parameters T
A
= -40 C to 150 C, V
DD
= 2.2V to 18V (unless otherwise speci
f
ied)
Parameter Test Conditions (SE) OUT (SE) Test Conditions (UA) OUT (UA)
South po
l
e
B
< B
RP
H
i
gh
B > B
OP
L
o
w
North
po
l
e
B
> B
OP
L
o
w
B < B
RP
H
i
gh
Table 5: Output behaviour versus magnetic pole
South
pole
North
pole
North
pole
South
pole
OUT = high
OUT = low (V
DSon
) OUT = high OUT = low (V
DSon
)
SE package UA
package
3901003881
Rev 016
9 Detailed General
De
sc
Based on mixed signal CMOS tec
h
sensitivity. This multi-purpose lat
ch
The chopper-stabilized amplifier u
s
observed with Hall sensors and a
m
and contributes to smaller chip siz
e
size is also an important factor to
m
This combination results in more s
t
The operating voltage from 2.2V to
range according to “L”, “K” and “E”
consumer low voltage applica
t
ions
.
The output signal is open-drain typ
e
a pull-up resistor tied between a
pu
10 Unique
Features
The US3881 exhibits latch magnet
i
poles to operate properly
.
SE package - Latch chara
ct
The device behaves as a latch wit
h
means magnetic fields with equival
Removing the magnetic field (B→0
)
device as a magnetic memory
.
A magnetic hysteresis B
HYST
keeps
output oscillation near the switchin
g
Low Voltage & Hi
gh
Page 5 of 11
sc
ription
h
nology, Melexis US3881 is a Hall-effect device with hig
h
ch
suits most of the application requiremen
t
s
.
s
es switched capacitor techniques to suppress the offse
t
m
plifiers. The CMOS technology makes this advanced t
e
e
and lower current consumption than bipolar technolog
y
m
inimize the effect of physical s
t
ress
.
t
able magnetic characteristics and enables faster and
m
o
18V, low current consumption and large choice of oper
a
specification make this device suitable for automotive,
in
.
e
. Such output allows simple connectivity with TTL or C
M
pu
ll-up voltage and the device ou
t
pu
t.
i
c switching characteristics. Therefore, it requires both
s
ct
eristic UA package - Latch char
a
h
symmetric operating and release switching points (B
OP
l
ent strength and opposite direction drive the output hig
h
)
keeps the output in its previous state. This latching pr
op
B
OP
and B
RP
separated by a minimal value. This hyster
e
g
poin
t.
U
S
38
8
1
Hall
Lat
ch
gh
Sensitivity
Data Shee
t
Mar/12
h
magne
t
ic
t
generally
e
chnique possible
y
. The small chip
m
ore precise design
.
a
ting
t
empera
t
ure
in
dustrial and
M
OS logic by using
s
outh and nor
t
h
a
cteristic
OP
=|B
RP
|). This
h
and low
.
op
erty defines
t
he
e
sis preven
t
s
U
S
38
8
1
Hall
Lat
ch
Low Voltage & High
Sensitivity
3901003881
Rev 016
Page 6 of 11 Data Shee
t
Mar/12
11 Performance
Graphs
3901003881
Rev 016
12 Application
Informa
ti
12.1 Typical Three-Wire A
pp
12.3 Automotive and Hars
h
Three-Wire Circuit
13 Application
Comm
en
For proper operation, a 100nF byp
a
the V
DD
and ground pin
.
For reverse voltage protection, it is
When using a resistor, three point
s
- the resistor has to limit th
- the resulting device supp
l
- the resistor has to withst
a
When using a diode, a reverse cur
r
Therefore, a 100Ω/0.25W resistor
f
Both solutions provide the required
When a weak power supply is use
d
recommended that figure 13.3 fro
m
The low-pass filter formed by R1
an
occurring on the device supply volt
ag
Low Voltage & Hi
gh
Page 7 of 11
ti
on
pp
lication Circuit
12.2 Two-Wir
e
h
, Noisy Environments
No
t
e
:
With this circuit, p
r
currents can be
de
connecting wires
.
The resistors RL
a
bias the input cur
r
specifications for
l
B
RP
: I
OFF
= I
R
+
B
OP
: I
ON
= I
OFF
+
en
ts
a
ss capacitor should be placed as close as possible to
t
recommended to connect a resistor or a diode in serie
s
s
are impor
t
an
t:
h
e reverse current to 50mA maximum (V
CC
/ R1 ≤ 50m
A)
l
y voltage V
DD
has to be higher than V
DD
min (V
DD
= V
CC
a
nd the power dissipated in reverse voltage condition (
P
r
ent cannot flow and the voltage drop is almost constan
t
f
or 5V application and a diode for higher supply voltage
reverse voltage pro
t
ec
t
ion
.
d
or when the device is intended to be used in noisy en
v
m
the Application Information section is used
.
an
d C1 and the zener diode Z1 bypass the disturbances
o
ag
e V
DD
. The diode D1 provides additional reverse volt
a
U
S
38
8
1
Hall
Lat
ch
gh
Sensitivity
Data Shee
t
Mar/12
e
Circuit
r
ecise ON and OFF
de
tected using only
t
wo
a
nd Rb can be used
t
o
r
ent. Refer to the par
t
l
imiting values
.
I
DD
= V
DD
/R
b
+
I
DD
I
OUT
= I
OFF
+ V
DD
/
R
L
t
he device be
t
ween
s
with the V
DD
pin
.
A)
– R1
.I
DD
)
2
P
D
= V
CC
/ R1)
t
(
≈
0
.
7V)
.
are recommended
.
v
ironment, it is
o
r voltage spikes
a
ge pro
t
ec
t
ion
.
U
S
38
8
1
Hall
Lat
ch
Low Voltage & High
Sensitivity
3901003881
Rev 016
Page 8 of 11 Data Shee
t
Mar/12
14 Standard information regarding manufacturability of Melexis
products with different soldering processes
Our products are classified and qualified regarding soldering technology, solderability and moisture
sensitivity level according to following test methods:
Reflow Soldering SMD’s (Surface Mount Devices)
• IPC/JEDEC J-STD-020
Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices
(classification reflow profiles according to table 5-2)
• EIA/JEDEC JESD22-A113
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing
(reflow profiles according to table 2)
Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
• EN60749-20
Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat
• EIA/JEDEC JESD22-B106 and EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Iron Soldering THD’s (Through Hole Devices)
• EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
• EIA/JEDEC JESD22-B102 and EN60749-21
Solderability
For all soldering technologies deviating from above mentioned standard conditions (regarding peak
temperature, temperature gradient, temperature profile etc) additional classification and qualification
tests have to be agreed upon with Melexis.
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance
of adhesive strength between device and board.
Melexis is contributing to global environmental conservation by promoting lead free solutions. For more
information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction
Of the use of certain Hazardous Substances) please visit the quality page on our website:
http://www.melexis.com/quality.aspx
15 ESD
Precautions
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD)
.
Always observe Electro Static Discharge control procedures whenever handling semiconductor produc
t
s
.
3901003881
Rev 016
0.891
+/-
0.05
0.20
2.90
B
S
C
see note 3
0.95
B
S
C
0.30
0
.
45
16 Package
Informati
on
16.1 SE Package (TSOT-3L
)
Low Voltage & Hi
gh
Page 9 of 11
0
.
45
1.90
B
S
C
0.127
+
0.023
-
0.007
0.15
0.20
on
)
U
S
38
8
1
Hall
Lat
ch
gh
Sensitivity
Data Shee
t
Mar/12
3901003881
Rev 016
1.65
+
/-
0.10
3.00
+
/-
0.20
2.5
m
i
n
see note 4
1
4
.
50
+
/
-
0.5
16.2 UA Package (TO-92 fl
a
4.10
+
/-
0.20
+
0.10
1.50
+
0.10
0.00
0.20
2.62
- 0.11
0.74
-
0.11
5° NO
M
+
0.02
0.46
-
0.03
1.27
+
/-
0.03
2.54
+
/-
0.03
0.38
+
/-
0.03
45°
N
O
M
3°
N
O
M
1.87
2.13
1.27
1.53
Ma
r
Low Voltage & Hi
gh
Page 10 of 11
1
4
.
50
+
/
-
0.5
a
t)
0.10
N
o
t
e
s:
0.11
M
5° MAX
1.
All
d
i
m
e
nsion
s
are
i
n
m
illi
m
e
t
e
r
s
2.
Package
d
i
m
e
nsion
exclusive m
o
l
d
i
ng
fl
a
sh
.
3. The end
fl
a
sh
sh
a
ll
not
exceed
0.127 mm
on
each
sid
e
.
4. To
preserve
r
e
li
a
b
ili
t
y,
it
i
s
recommended
t
o
have
t
o
t
a
l
l
ea
d
l
e
ng
t
h
e
qu
a
l
to
2.5
mm
m
i
n
i
m
u
m
,
measured
f
r
o
m
the
package
li
n
e
.
M
a
r
ki
ng
:
1
st
L
i
n
e
: U38 - Part number
(U
S
3881
)
2
nd
L
i
n
e
: yww
y -
l
a
st
d
i
g
i
t
of
ye
a
r
ww -
ca
l
e
nd
a
r
w
ee
k
0.38
+
/-
0.03
0.41
0.45
N
o
t
e
s:
1.
All
d
i
m
e
nsion
s
are
i
n
m
illi
m
e
t
e
r
s
r
ked
s
i
d
e
U
S
38
8
1
Hall
Lat
ch
gh
Sensitivity
Data Shee
t
Mar/12
U
S
38
8
1
Hall
Lat
ch
Low Voltage & High
Sensitivity
3901003881
Rev 016
Page 11 of 11
Data Shee
t
Mar/12
17 Disclaimer
Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in
its Term of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the
information set forth herein or regarding the freedom of the described devices from patent infringement.
Melexis reserves the right to change specifications and prices at any time and without notice. Therefore,
prior to designing this product into a system, it is necessary to check with Melexis for current information.
This product is intended for use in normal commercial applications. Applications requiring extended
temperature range, unusual environmental requirements, or high reliability applications, such as military,
medical life-support or life-sustaining equipment are specifically not recommended without additional
processing by Melexis for each application.
The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not
be liable to recipient or any third party for any damages, including but not limited to personal injury,
property damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or
consequential damages, of any kind, in connection with or arising out of the furnishing, performance or
use of the technical data herein. No obligation or liability to recipient or any third party shall arise or flow
out of Melexis’ rendering of technical or other services.
© 2012 Melexis NV. All rights reserved.
For the latest version of this document, go to our website at
www.melexis.com
Or for additional information contact Melexis Direct:
Europe, Africa, Asia: America:
Phone: +32 1367 0495 Phone: +1 248 306 5400
E-mail: sales_europe@melexis.com E-mail: sales_usa@melexis.com
ISO/TS 16949 and ISO14001 Certified
