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MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT6, MCT61, MCT62 Rev.1.6
August 2016
MCT6, MCT61, MCT62
8-Pin Dual Channel Phototransistor Optocouplers
Features
• Two Isolated Channels Per Package
• Safety and Regulatory Approvals:
– UL1577, 5,000 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 890 V Peak Working
Insulation Voltage
Applications
• AC line/digital logic – isolate high voltage transients
• Digital logic/digital logic – eliminate spurious grounds
• Digital logic/AC triac control – isolate high voltage
• transients
• Twisted pair line receiver – eliminate ground loop
• feedthrough
• Telephone/telegraph line receiver – isolate high
• voltage transients
• High frequency power supply feedback control –
• maintain floating grounds and transients
• Relay contact monitor – isolate floating grounds and
• transients
• Power supply monitor – isolate transients
Description
The general purpose optocouplers, MCT6, MCT61, and
MCT62, have two isolated channels in a standard plastic
8-pin dual-in-line (DIP) package for density applications.
Each channel consists of a gallium arsenide infrared
emitting diode driving a NPN silicon planar
phototransistor. For four channel applications, two
packages fit into a standard 16-pin DIP socket.
Functional Schematic Package Outlines
8
1
8
1
8
1
EMITTER
COLLECTOR
ANODE
CATHODE
1
2
3
4 5
6
7
8
EMITTER
COLLECTOR
ANODE
CATHODE
Figure 2. Package Outlines
Figure 1. Schematic
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT6, MCT61, MCT62 Rev.1.6 2
MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 VRMS I–IV
< 300 VRMS I–IV
Climatic Classification 55/115/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1424 Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1668 Vpeak
VIORM Maximum Working Insulation Voltage 890 Vpeak
VIOTM Highest Allowable Over-Voltage 8000 Vpeak
External Creepage 7mm
External Clearance 7mm
DTI Distance Through Insulation (Insulation Thickness) 0.4 mm
TSCase Temperature(1) 175 °C
IS,INPUT Input Current(1) 60 mA
PS,OUTPUT Output Power(1) 150 mW
RIO Insulation Resistance at TS, VIO = 500 V(1) > 109
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT6, MCT61, MCT62 Rev.1.6 3
MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol Parameter Value Unit
TSTG Storage Temperature -55 to +150 °C
TOPR Operating Temperature -55 to +100 °C
TJJunction Temperature -55 to +125 °C
TSOL Lead Solder Temperature 260 for 10 sec-
onds °C
PD
Total Device Power Dissipation @ TA = 25°C 400 mW
Derate Above 25°C 5.33 mW/°C
EMITTER (Each channel)
IFDC / Average Forward Input Current 60 mA
IF(pk) Forward Current - Peak (PW = 1μs, 300pps) 3 A
VRReverse Input Voltage 3 V
PD(EMITTER)
Total Power Dissipation @ TA = 25°C 100 mW
Derate Above 25°C 1.3 mW/°C
DETECTOR
ICContinuous Collector Current 30 mA
PD(DETECTOR)
Total Power Dissipation @ TA = 25°C 150 mW
Derate Above 25°C 2.0 mW/°C
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT6, MCT61, MCT62 Rev.1.6 4
MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristic s
Transfer Characteristics
AC CHARACTERISTICS
Isolation Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
VFInput Forward Voltage IF = 20 mA 1.2 1.5 V
VRReverse Voltage IR = 10 μA 3 25 V
IRReverse Leakage Current VR = 5 V 0.001 10 μA
CJJunction Capacitance VF = 0 V, f = 1 MHz 50 pF
DETECTOR
BVCEO
Collector-to-Emitter Breakdown
Voltage IC = 1.0 mA, IF = 0 30 85 V
BVECO
Emitter-to-Collector Breakdown
Voltage IE = 100 μA, IF = 0 6 13 V
ICEO Collector-to-Emitter Dark Current VCE = 10 V, IF = 0 5 100 nA
CCE Capacitance VCE = 0 V, f = 1 MHz 8 pF
Symbol Parameter Device Test Conditions Min. Typ. Max. Unit
DC CHARACTERISTICS
CTR Current Transfer Ratio, Collector-
to-Emitter
MCT6 IF = 10 mA, VCE = 10 V 20
%MCT61 IF = 5 mA, VCE = 5 V 50
MCT62 100
VCE(SAT)
Saturation Voltage, Collector-to-
Emitter ALL IF = 16 mA, IC = 2 mA 0.15 0.4 V
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Non-Saturated
TON Turn-On Time
RL = 100 Ω, IC = 2 mA, VCC = 10 V
3.0 µs
TOFF Turn-Off Time 3.0 µs
TRRise Time 2.4 µs
TFFall Time 2.4 µs
Saturated
TON Turn-On Time IF = 16 mA, RL = 1.9 kΩ, VCE = 5 V 2.4 µs
TOFF Turn-Off Time 25.0 µs
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VISO Input-Output Isolation Voltage II-O ≤ 10 µA, t = 1 Minute 5,000 VACRMS
CISO Isolation Capacitance f = 1 MHz 0.5 pF
RISO Isolation Resistance VI-O = 500 VDC 1011 Ω
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT6, MCT61, MCT62 Rev.1.6 5
MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers
Typical Performance Curves
51015
IF - FORWARD CURRENT (mA)
)LJ1RUPDOL]HG&75YV)RUZDUG&XUUHQW
020
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE
= 5.0V
TA = 25°C
Normalized to
I
F
= 10mA
-75
-50 -25 0 25 50 75 100 125
NORMALIZED CTR
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Normalized to
IF = 10mA
TA = 25°C
I
F
= 10mA
I
F
= 20mA
25 50 75 100
I
F
= 5mA
0 125
I
CEO
- COLLECTOR-EMITTER DARK CURRENT (μA)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
CE
= 10V
SWITCHING SPEED (μs)
V
F
- FORWARD VOLTATGE (V)
0.1
1
10
100
TA - AMBIENT TEMPERATURE (°C)
)LJ1RUPDOL]HG&75YV$PELHQW7HPSHUDWXUH
1000
T
2))
T
21
T
)
I
F
= 10mA
VCC =
10V
TA = 25°C
V
CE (SAT)
- COLLECTOR-EMITTER
0.01 10
0.001
0.01
0.1
1
10
100
20mA
IF =
I
F
= 2.5mA
IF =
10mA
IF = 5mA
TA = 25°C
10 0.1 1
I
C
- COLLECTOR CURRENT (mA)
)LJ&ROOHFWRU(PLWWHU6DWXUDWLRQ9ROWDJH
YV&ROOHFWRU&XUUHQW
I
F
- LED FORWARD CURRENT (mA)
)LJ/(')RUZDUG9ROWDJHYV)RUZDUG&XUUHQW
1 100
1.0
1.1
1.2
1.3
1.4
TA = 25°C
TA = 55°C
TA = 100°C
T
5
SATURATION VOLTAGE (V)
1.8
1.7
1.6
1.5
0.1110100
R - LOAD RESISTOR (kΩ)
)LJ6ZLWFKLQJ6SHHGYV/RDG5HVLVWRU
TA - AMBIENT TEMPERATURE (°C)
)LJ'DUN&XUUHQWYV$PELHQW7HPSHUDWXUH
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT6, MCT61, MCT62 Rev.1.6 6
MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers
Switching Time Test Circuit and Waveforms
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT WAVE FORMS
757)
INPUT
IF RL
RBE
VCC = 10 V
OUTPUT
721
10%
90%
72))
IC
Adjust IF to produce IC = 2 mA
Figure 9. Switching Time Te st Circuit and Waveforms
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT6, MCT61, MCT62 Rev.1.6 7
MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers
Reflow Profile
Profile Feature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (t
S
) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (t
L
to t
P
) 3°C/second max.
Liquidous Temperature (T
L
) 217°C
Time (t
L
) Maintained Above (T
L
) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (t
P
) within 5°C of 260°C 30 seconds
Ramp-down Rate (T
P
to T
L
) 6°C/second max.
Time 25°C to Peak Temperature 8 minutes max.
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
T
L
t
s
t
L
t
P
T
P
Tsmax
Tsmin
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
120 240 360
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT6, MCT61, MCT62 Rev.1.6 8
MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers
Ordering Information
Note
1. The product orderable part number system listed in this table also applies to the MCT61 and MCT62.
Marking Information
Figure 10. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
MCT6 DIP 8-Pin Tube (50 units per tube)
MCT6S SMT 8-Pin (Lead Bend) Tube (50 units per tube)
MCT6SD SMT 8-Pin Tape and Reel (1,000 units per reel)
MCT6300 DIN EN/IEC 60747-5-5 Option Tube (50 units per tube)
MCT63S SMT 8-Pin (Lead Bend); DIN EN/IEC 60747-5-5 Option Tube (50 units per tube)
MCT63SD SMT 8-Pin; DIN EN/IEC 60747-5-5 Option Tape and Reel (1,000 units per reel)
MCT6300W 0.4” Lead Spacing; DIN EN/IEC 60747-5-5 Option Tube (50 units per tube)
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4 Two-Digit Year Code, e.g., “16”
5 Digit Work Week, Ranging from “01” to “53”
6 Assembly Package Code
1
2
6
43 5
MCT6
HYYXXV
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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