SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,58 TYPE No. DISS. | fab @25C AG41* 200m = |60.M AG42* 200m |60.M A49L* 200m |60.M5 ME1120 200m | 6OMSA SA2255D 200m | 6OMSA 16L2 200m |80.M 16162 200m |80.M& 16L23 200m |86.M5 TE3859A 200m | 90M BC132A 200m |100M 16L4 200m = |112M5 D24A3391 200m |120M5 16L25 200m = |124M8 TE3855A 200m |130M TE3859 200m |135M 02443393 200m |140M5 2SC362 200m |150M8 2SC369G/BL |200m |150M5 280371 200m | 150M 28C377 200m |150M5 2SC870 200m | 150M 2SC904 200m |150M BC151 200m |160M8 2SC350 200m |180M$ 2SC80 200m |200M8 2S8C709 200m |200M T2857 200m |200M BF218 200m |220M5 AT310 200m |230M AT313 200m |230M5 AT316 200m |230M5 2N2954 200m |300M5A 2SC468Ht 200m |300M5A/ 1.3m NS9728 200m |300M4| 1.3m m NS9731 200m |300M8A/ 1.3m TE3607t 200m |300M84}1.6m D.A.T.A. 5.0 5.0 5.0 4.0 7.0 4.0 40 40 6.0 6.0 4.0 5.0 40 4.0 4.0 5.0 5.0 5.0 40 4.0 4.0 4.0 5.0 5.0 3.0 4.0 5.0 40 5.0 5.0 5.0 3.0 5.0 40 4.0 5.0 |200m IN ORDER OF 2.0m | 40 2.0m | 20 2.0m |100 10D/)2.0md ; 25 35 1.00 |3. 60 1.0 |3.0mZ | 60 30 SYMBOLS AND CODES EXPLAINED IN INTERPRETER MAX COLLECTOR DISSIPATION Cob |STRUC|Y200 |E O -TURE | s/a |AD T0200/D E X36a X36a X56a A R110c jA L2 R67 R67 a R97a TO106/A a R67 X54 R67 a R97a R97a X54 R67 a R67a a R67a a R67a To9g2 | D TO92 TO98 TO1 a TO17 a TO92 R38 TO98 TO1 TO1 TO1 a PE R92b ED |R38 ED R38 a DPL |R97a 58