2N4014
October 1988
HIGH-VOLTAGE, HIGH CURRENT SWITCH
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-base Voltage (IE=0) 80 V
VCES Collector-emitter Voltage (VBE =0) 80 V
VCEO Collector-emitter Voltage (IB=0) 50 V
V
EBO Emitter-base Voltage (IC=0) 6 V
ICCollector Current 1 A
Ptot Total Power Dissipation at Tamb ≤25 °C
at Tcase ≤25 °C0.36
1.2 W
W
Tstg,T
jStorage and Junction Temperature – 65 to 200 °C
The 2N4014isa silicon planar epitaxial transistor in
TO-18metal case. It is a high-voltage, high current
switch used for memory applications requiring
breakdown voltages up to 50 V and operating cur-
rents to 1 A. Fast switching times are assured be-
cause of the high minimum fT (300 MHz) and tight
control on storage time.
DESCRIPTION
TO-18
INTERNAL SCHEMATIC DIAGRAM
1/6
ELECTRICAL CHARACTERISITCS(Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cutoff Current
(IE=0) VCB =60V
V
CB =60V Tamb =100°C1.7
120 µA
µA
V(BR)CBO Collector-base Breakdown
Voltage
(IE=0)
IC=10µA80V
V
(BR)CES Collector-emitter Breakdown
Voltage (VBE =0) IC=10 µA80V
V
(BR)CEO* Collector-Emitter Breakdown
Voltage (IB=0) I
C=10mA 50 V
V(BR)EBO Emitter-Base Breakdown Voltage
(IC=0) IE=10 µA6V
V
CE(sat)* Collector-Emitter Saturation
Voltage IC=10mA
IC=100mA
IC=300mA
IC=500mA
IC=800mA
IC=1000mA
IB=1 mA
IB=10 mA
IB=30mA
I
B=50mA
I
B=80mA
I
B=100mA
0.19
0.21
0.31
0.4
0.5
0.6
0.25
0.26
0.4
0.52
0.8
0.95
V
V
V
V
V
V
VBE(sat)* Base-Emitter Saturation Voltage IC=10mA
IC=100mA
IC=300mA
IC=500mA
IC=800mA
IC=1000mA
IB=1mA
I
B=10mA
I
B=30mA
I
B=50mA
I
B=80mA
I
B=100mA
0.9
0.64
0.75
0.89
1.0
1.1
0.76
0.86
1.1
1.2
1.5
1.7
V
V
V
V
V
V
hFE* DC Current Gain IC=10mA
IC=100mA
IC=300mA
IC=1000mA
IC=800mA
IC=500mA
VCE =1V
VCE =1V
VCE =1V
VCE =5V
VCE =2V
VCE =1V
30
60
40
25
20
35
60
90
60
65
40
150
hfe High Frequency Current Gain IC=50mA
f = 100 MHz VCE =10V 3
CCBO Collector-base Capacitance IE=0
f=1MHz V
CB = 10 V 10 pF
CEBO Emitter-base Capacitance IC=0
f=1MHz V
EB = 0.5 V 55 pF
ton** Turn-on Time IC=500mA
V
CC =30V I
B=50mA 35 ns
t
off** Turn-off Time IC=500mA
IB1 =–IB2 =50 V
CC =30V
mA 60 ns
* Pulsed : pulse duration = 300 ms, duty cycle = 1 %.
** See test circuit.
THERMAL DATA
Rth j-case
Rth j-amb Thermal Resistance Junction-case
Thermal Resistance Junction-ambient Max
Max 146
486 °C/W
°C/W
2N4014
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DC Current Gain. Collector-emitter Saturation Voltage.
Base-emitter Saturation Voltage. Contours ofConstant Transition Frequency.
Switching Characteristics. Switching Characteristics.
2N4014
3/6
PULSE GENERATOR :
tr,tf< 1.0ns
PW ≈1.0 µs
ZIN =50Ω
DC < 2 %
TO OSCILLOSCOPE:
tr≈1.0ns
ZIN >100 KΩ
Test Circuit for ton,t
off.
2N4014
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o45o
L
G
I
DA
F
E
B
H
C
TO-18 MECHANICAL DATA
0016043
2N4014
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor for any infringementof patents or other rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder anypatent or patent rights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents inlife supportdevices or systems withoutexpress
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
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2N4014
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