TrenchStop(R) Series IGP50N60T IGW50N60T Low Loss IGBT in TrenchStop(R) and Fieldstop technology * * * * * * * * * * * C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop(R) and Fieldstop technology for 600 V applications offers : PG-TO-220-3-1 - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type G E PG-TO-247-3 VCE IC VCE(sat),Tj=25C Tj,max Marking Package IGP50N60T 600 V 50 A 1.5 V 175 C G50T60 PG-TO-220-3-1 IGW50N60T 600 V 50 A 1.5 V 175 C G50T60 PG-TO-247-3 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax IC Value 600 Unit V A TC = 25C 100 TC = 100C 50 Pulsed collector current, tp limited by Tjmax ICpuls 150 Turn off safe operating area (VCE 600V, Tj 175C) - 150 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 333 W Operating junction temperature Tj -40...+175 C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Short circuit withstand time 2) VGE = 15V, VCC 400V, Tj 150C 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 http://store.iiic.cc/ Rev. 2.6 Nov. 09 IGP50N60T IGW50N60T TrenchStop(R) Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.45 K/W Characteristic IGBT thermal resistance, RthJC junction - case Thermal resistance, RthJA junction - ambient PG-TO-220-3-1 62 PG-TO-247-3-21 40 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j = 25 C - 1.5 2.0 T j = 17 5 C - 1.9 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 0. 2mA Collector-emitter saturation voltage VCE(sat) V V G E = 15V, I C = 50A Gate-emitter threshold voltage VGE(th) I C = 0. 8mA, V C E = V G E Zero gate voltage collector current ICES V C E = 600V , V G E = 0V A T j = 25 C - - 40 T j = 17 5 C - - 1000 Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA Transconductance gfs V C E = 20V, I C = 50A - 31 - S Integrated gate resistor RGint - Dynamic Characteristic pF V C E = 25V, - 3140 - Coss V G E = 0V, - 200 - Reverse transfer capacitance Crss f= 1 M Hz - 93 - Gate charge QGate V C C = 4 80V, I C = 50A - 310 - nC nH Input capacitance Ciss Output capacitance V G E = 1 5V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) 1) IC(SC) PG -TO -220-3-1 - 7 - PG -TO -247-3-21 - 13 - V G E = 1 5V,t S C 5s V C C = 400V, T j 150 C - 458.3 - A Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 http://store.iiic.cc/ Rev. 2.6 Nov. 09 IGP50N60T IGW50N60T TrenchStop(R) Series Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 26 - - 29 - - 299 - - 29 - - 1.2 - - 1.4 - - 2.6 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25 C, V C C = 4 00V, I C = 50A, V G E = 0/ 1 5V , RG= 7 , L 1 ) = 103nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery.2) ns mJ Switching Characteristic, Inductive Load, at Tj=150 C Parameter Symbol Conditions Value min. Typ. max. - 27 - - 33 - - 341 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) 2) T j = 17 5 C, V C C = 4 00V, I C = 50A, V G E = 0/ 1 5V , RG= 7 L 1 ) = 103nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. 2 ) - 55 - - 1.8 - - 1.8 - - 3.6 - ns mJ Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. Includes Reverse Recovery Losses from IKW50N60T due to dynamic test circuit in Figure E. Power Semiconductors 3 http://store.iiic.cc/ Rev. 2.6 Nov. 09 IGP50N60T IGW50N60T TrenchStop(R) Series 140A tp =2s 100A 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A T C =80C 80A T C =110C 60A 40A 20A 0A 100H z Ic Ic 1kH z 10kH z 100kH z DC 10V 100V 10ms 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V) 80A IC, COLLECTOR CURRENT POWER DISSIPATION Ptot, 50s 1ms 1V 300W 100W 10A 1A f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 7) 250W 10s 200W 150W 60A 40A 20A 50W 0W 25C 50C 75C 0A 25C 100C 125C 150C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C) Power Semiconductors 4 75C 125C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C) http://store.iiic.cc/ Rev. 2.6 Nov. 09 IGP50N60T IGW50N60T TrenchStop(R) Series 120A V GE =20V 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A 15V 13V 80A 11V 9V 60A 7V 40A 20A 0V 1V 2V 13V 80A 11V 60A 9V 7V 40A 0A 3V 0V 80A 60A 40A T J = 1 7 5 C 20A 2 5 C 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V 4V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) IC, COLLECTOR CURRENT 15V 20A 0A 0A V G E =20V 100A 2.5V IC =100A 2.0V IC =50A 1.5V IC =25A 1.0V 0.5V 0.0V 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 http://store.iiic.cc/ Rev. 2.6 Nov. 09 IGP50N60T IGW50N60T TrenchStop(R) Series t d(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES t d(off) tr tf t d(on) 100ns tf tr t d(on) 10ns 0A 20A 40A 60A 10ns 80A 0 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 7, Dynamic test circuit in Figure E) 5 10 15 20 25 RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf tr t d(on) 10ns 25C 50C 75C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50C 100C 125C 150C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, RG=7, Dynamic test circuit in Figure E) Power Semiconductors VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.8mA) 6 http://store.iiic.cc/ Rev. 2.6 Nov. 09 IGP50N60T IGW50N60T TrenchStop(R) Series *) Eon and Ets include losses due to diode recovery *) E on and E ts inc lude los se s Ets* Eon* 4.0mJ Eoff 2.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 6.0mJ 0A 20A 40A 60A 80A 5.0 m J 4.0 m J 3.0 m J E off 2.0 m J E on * 1.0 m J 0 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 7, Dynamic test circuit in Figure E) 2.0mJ Eoff Eon* 75C 4m J E on * 3m J E ts * 2m J E off 1m J 0m J 300V 100C 125C 150C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, RG = 7, Dynamic test circuit in Figure E) Power Semiconductors due to diode recovery E, SWITCHING ENERGY LOSSES 3.0mJ 50C 20 *) E on and E ts include losses Ets* 0.0mJ 25C 10 RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES E ts * 0.0 m J 0.0mJ 1.0mJ due to d io de recovery 6.0 m J 8.0mJ 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 50A, RG = 7, Dynamic test circuit in Figure E) 7 http://store.iiic.cc/ Rev. 2.6 Nov. 09 TrenchStop(R) Series IGP50N60T IGW50N60T VGE, GATE-EMITTER VOLTAGE C iss 1 5V c, CAPACITANCE 1nF 1 20 V 4 80V 1 0V C oss 100pF 5V C rss 0V 0nC 100 nC 20 0n C 0V 3 00n C QGE, GATE CHARGE Figure 17. Typical gate charge (IC=50 A) 10V 20V 30V 40V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) SHORT CIRCUIT WITHSTAND TIME 700A 600A 500A 400A 300A 200A tSC, IC(sc), short circuit COLLECTOR CURRENT 12s 800A 100A 0A 12V 14V 16V 8s 6s 4s 2s 0s 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C) Power Semiconductors 10s 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C) 8 http://store.iiic.cc/ Rev. 2.6 Nov. 09 TrenchStop(R) Series IGP50N60T IGW50N60T ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 0.2 -1 10 K/W 0.1 R,(K/W) 0.18355 0.12996 0.09205 0.03736 0.00703 0.05 -2 10 K/W 0.02 R1 0.01 , (s) -2 7.425*10 -3 8.34*10 -4 7.235*10 -4 1.035*10 -5 4.45*10 R2 C1=1/R1 C2=2/R2 single pulse 1s 10s 100s 1ms 10ms 100ms tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 9 http://store.iiic.cc/ Rev. 2.6 Nov. 09 TrenchStop(R) Series IGP50N60T IGW50N60T PG-TO-220-3-1 Power Semiconductors 10 http://store.iiic.cc/ Rev. 2.6 Nov. 09 TrenchStop(R) Series Power Semiconductors 11 http://store.iiic.cc/ IGP50N60T IGW50N60T Rev. 2.6 Nov. 09 IGP50N60T IGW50N60T TrenchStop(R) Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Figure B. Definition of switching losses Power Semiconductors 12 http://store.iiic.cc/ Rev. 2.6 Nov. 09 TrenchStop(R) Series IGP50N60T IGW50N60T Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 http://store.iiic.cc/ Rev. 2.6 Nov. 09