Major Ratings and Characteristics
IT(AV) Sinusoidal 70 A
waveform
IRMS (*) 75 A
VRRM/
VDRM 1200 e 1600 V
ITSM 1400 A
VT@ 100 A, TJ = 25°C 1.4 V
dv/dt 500 V/µs
di/dt 150 A/µs
TJ- 40 to 125 °C
Characteristics Values Units
Super-247
Description/ Features
The 70TPS..PbF SAFEIR series of silicon con-
trolled rectifiers are specifically designed for high
and medium power switching and phase control
applications.
Typical applications are in input rectification (soft
start) or AC-Switches or high current crow-bar as
well as others phase-control circuits.
These products are designed to be used with
International Rectifier input diodes, switches and
output rectifiers which are available in identical
package outlines.
Package Outline
Range
PHASE CONTROL SCR
Lead-Free ("PbF" suffix)
1
Bulletin I2184 11/04
SAFEIR Series
70TPS..PbF
VT< 1.4V @ 100A
ITSM = 1400A
V
RRM = 1200 e 1600V
www.irf.com
(*) Lead current limitation
2
70TPS..PbF SAFEIR Series
Bulletin I2184 11/04
www.irf.com
IT(AV) Max. Average On-state Current 70 A @ TC = 82° C, 180° conduction half sine wave
IT(RMS) Max. Continuous RMS 75 Lead current limitation
On-state Current As AC switch
ITSM Max. Peak One Cycle Non-Repetitive 1200 A 10ms Sine pulse, rated VRRM applied Initial
Surge Current 1400 10ms Sine pulse, no voltage reapplied TJ = TJ max.
I2t Max. I2t for Fusing 7200 A2s 10ms Sine pulse, rated VRRM applied
10200 10ms Sine pulse, no voltage reapplied
I2t Max. I2t for Fusing 102000 A2s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low Level Value of Threshold 0.916 V TJ = 125°C
Voltage
VT(TO)2High Level Value of Threshold 1.21
Voltage
rt1 Low Level Value of On-state 4.138 m
Slope Resistance
rt2 High Level Value of On-state 3.43
Slope Resistance
VTM Max. Peak On-state Voltage 1.4 V @ 100A, TJ = 25°C
di/dt Max. Rate of Rise of Turned-on Current 150 A/µs TJ = 25°C
IHMax. Holding Current 200 mA TJ = 25°C
ILMax. Latching Current 400
IRRM/ Max. Reverse and Direct 1.0 mA TJ = 25°C
IDRM Leakage Current 15 TJ = 125°C
dv/dt Max. Rate of Rise 500 V/µs TJ = 125°C
Voltage Ratings
Part Number
Absolute Maximum Ratings
Parameters 70TPS.. Units Conditions
VR = rated VRRM/ VDRM
VRRM/ VDRM, max. repetitive VRSM , maximum non repetitive IRRM/ IDRM
peak and off-state voltage peak reverse voltage 125°C
VVmA
70TPS12PbF 1200 1300 15
70TPS16PbF 1600 1700
3
70TPS..PbF SAFEIR Series
Bulletin I2184 11/04
www.irf.com
PGM Max. peak Gate Power 10 W t = 30µs
PG(AV) Max. average Gate Power 2.5
IGM Max. peak Gate Current 2.5 A
- VGM Max. peak negative Gate Voltage 10 V
VGT Max. required DC Gate Voltage 4.0 TJ = - 40°C Anode supply = 6V
to trigger 1.5 TJ = 25°C resistive load
1.1 TJ = 125°C
IGT Max. required DC Gate Current 270 mA TJ = - 40°C
to trigger 100 TJ = 25°C
80 TJ = 125°C
VGD Max. DC Gate Voltage not to trigger 0.25 V TJ = 125°C, VDRM = rated value
IGD Max. DC Gate Current not to trigger 6 mA
Parameters 70TPS.. Units Conditions
Triggering
Thermal-Mechanical Specifications
TJMax. Junction Temperature Range - 40 to 125 °C
Tstg Max. Storage Temperature Range - 40 to 150
RthJC Max. Thermal Resistance Junction 0.27 °C/W DC operation
to Case
RthJA Max. Thermal Resistance Junction 40
to Ambient
RthCS Max. Thermal Resistance Case 0.2 Mounting surface, smooth and greased
to Heatsink
wt Approximate Weight 6 (0.21) g (oz.)
T Mounting Torque Min. 6 (5) Kg-cm
Max. 12 (10) (lbf-in)
Case Style Super-247
Marking Device 70TPS16
Parameters 70TPS.. Units Conditions
Sine half wave conduction Rect. wave conduction
Device Units
180o120o90o60o30o180o120o90o60o30o
70TPS 0.078 0.092 0.117 0.172 0.302 0.053 0.092 0.125 0.180 0.306 °C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
4
70TPS..PbF SAFEIR Series
Bulletin I2184 11/04
www.irf.com
Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Average On-state Current (A)
Maximum Allowable Case temperature (°C)
Average On-state Current (A)
Maximum Allowable Case temperature (°C)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
500
600
700
800
900
1000
1100
1200
1300
11010
0
70TPS.. Series
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
500
600
700
800
900
1000
1100
1200
1300
1400
1500
0.01 0.1 1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial Tj = 125˚C
No Voltage Reapplied
Rated Vrrm Reapplied
70TPS.. Series
70
80
90
100
110
120
130
0 1020304050607080
30˚60˚90˚120˚180˚
Conduction Angle
70TPS.. Series
RthJC (DC) = 0.27 ˚C/W
0
20
40
60
80
100
120
140
0 10203040506070
RMS Limit
Conduction Angle
180˚
120˚
90˚
60˚
30˚
70TPS.. Series
Tj = 125˚C
60
70
80
90
100
110
120
130
0 102030405060708090
DC
30˚60˚90˚120˚
180˚
Conduction Period
70TPS.. Series
RthJC (DC) = 0.27 ˚C/W
0
30
60
90
120
150
0 1530456075
RMS Limit
Conduction Period
70TPS.. Series
Tj = 125˚C
180˚
120˚
90˚
60˚
30˚
DC
5
70TPS..PbF SAFEIR Series
Bulletin I2184 11/04
www.irf.com
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - GateCharacteristics
Fig. 9 - Thermal Impedance ZthJC Characteristics
Instantaneous On-state Voltage (A)
Instantaneous On-state Current (A)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJC (°C/W)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Steady State Value
(DC Operation)
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
70TPS.. Series
1
10
100
1000
0.511.522.533.5
70TPS.. Series
Tj = 25˚C
Tj = 125˚C
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b) (a)
Rectangular gate pulse
(4) (3) (2) (1)
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
TJ = -40 ˚C
TJ = 25 ˚C
TJ = 125 ˚C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
70TPS.. Series
6
70TPS..PbF SAFEIR Series
Bulletin I2184 11/04
www.irf.com
EXAMPLE:
IN ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2000
LOT CODE 5657
WITH ASSEMBLY
THIS IS A 70TPS16
P035H
56 57
70TPS16
LOT CODE
ASSEMBLY
RECTIFIER
LOGO
INTERNATIONAL
PART NUMBER
YEAR 0 = 2000
P = LEAD-FREE
WEEK 35
LINE H
DATE CODE
Outline Table
Dimensions in millimeters and inches
B
Ø 1.60 [.063]
12
0.25 [.010] B A
3
0.13 [.005]
EE
4
0.25 [.010] B A
4
A
2X R
MAX.
SECTION E-E
2X
3X
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]
3. CONTROLLING DIMENSION: MILLIMETER
NOTES:
4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-274AA
3 - SOURCE
2 - DRAIN
1 - GATE
4 - DRAIN
3 - EMITTER
4 - COLLECTOR
1 - GATE
2 - COLLECTOR
LEAD ASSIGNMENTS
MOSFET IGBT
C
5.45 [.215] 2.35 [.092]
1.65 [.065]
4.25 [.167]
3.85 [.152]
16.10 [.632]
15.10 [.595]
3X
20.80 [.818]
19.80 [.780]
14.80 [.582]
13.80 [.544]
16.10 [.633]
15.50 [.611]
1.30 [.051]
1.10 [.044]
1.30 [.051]
0.70 [.028]
2.15 [.084]
1.45 [.058]
5.50 [.216]
4.50 [.178] 13.90 [.547]
13.30 [.524]
Marking Information
7
70TPS..PbF SAFEIR Series
Bulletin I2184 11/04
www.irf.com
Ordering Information Table
70 T P S 16 PbF
Device Code
1524
3
1- Current Rating (70 = 70A)
2- Circuit Configuration:
T = Thyristor
3- Package:
P = Super-247
4- Type of Silicon:
S = Standard Recovery Rectifier
5- Voltage code: Code x 100 = VRRM
6-y none = Standard Production
y PbF = Lead-Free
12 = 1200V
16 = 1600V
(G) 3
2
(A)
1 (K)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/04
Data and specifications subject to change without notice.
This product has been designed for Industrial Level.
Qualification Standards can be found on IR's Web site.
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