2009-08-18
Page 1
Rev. 2.1BSP125
SIPMOS Power-Transistor Product Summary
VDS 600 V
RDS(on) 45 Ω
ID0.12 A
Feature
•N-Channel
• Enhancement mode
• Logic Level
• dv/dtrated PG-SOT223
Marking
BSP125
Type Package Tape and Reel Information
BSP125 PG-SOT223 L6433: 4000 pcs/reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
0.12
0.1
A
Pulsed drain current
TA=25°C
ID puls 0.48
Reverse diode dv/dt
IS=0.12A, VDS=480V, di/dt=200A/µs, Tjmax=175°C
dv/dt6kV/µs
Gate source voltage VGS ±20 V
ESD Class (JESD22-A114-HBM) 1A (>250V, <500V)
Power dissipation
TA=25°C, TA=25
Ptot 1.8 W
Operating and storage temperature Tj,Tstg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Pb-free lead plating; RoHS compliant
•
BSP125 PG-SOT223 L6327: 1000 pcs/reel
RoHS compliant
Yes
Yes BSP125
Packaging
Non dry
x Qualified according to AEC Q101
Non dry
2009-08-18
Page 2
Rev. 2.1BSP125
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
RthJS - - 25 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
-
-
115
70
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=0.25mA
V(BR)DSS 600 - - V
Gate threshold voltage, VGS = VDS
ID=94µA
VGS(th) 1.3 1.9 2.3
Zero gate voltage drain current
VDS=600V, VGS=0, Tj=25°C
VDS=600V, VGS=0, Tj=125°C
IDSS
-
-
-
-
0.1
5
µA
Gate-source leakage current
VGS=20V, VDS=0
IGSS -10 100 nA
Drain-source on-state resistance
VGS=4.5V, ID=0.11A
RDS(on) -26 60 Ω
Drain-source on-state resistance
VGS=10V, ID=0.12A
RDS(on) -25 45
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2009-08-18
Page 3
Rev. 2.1BSP125
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=0.1A
0.06 0.18 - S
Input capacitance Ciss VGS=0, VDS=25V,
f=1MHz
-100 150 pF
Output capacitance Coss -8.2 12.3
Reverse transfer capacitance Crss -3.2 4.8
Turn-on delay time td(on) VDD=300V, VGS=10V,
ID=0.13A, RG=6Ω
-7.7 11.6 ns
Rise time tr-14.4 21
Turn-off delay time td(off) -20 30
Fall time tf-110 165
Gate Charge Characteristics
Gate to source charge Qgs VDD=400V, ID=0.13A -0.27 0.3 nC
Gate to drain charge Qgd -2.3 3.5
Gate charge total QgVDD=400V, ID=0.13A,
VGS=0 to 10V
-4.4 6.6
Gate plateau voltage V(plateau) VDD=400V, ID=0.13A -3.44 - V
Reverse Diode
Inverse diode continuous
forward current
ISTA=25°C - - 0.12 A
Inv. diode direct current, pulsedISM - - 0.48
Inverse diode forward voltage VSD VGS=0, IF=0.12A -0.8 1.2 V
Reverse recovery time trr VR=300V, IF=lS,
diF/dt=100A/µs
-156 235 ns
Reverse recovery charge Qrr -165 250 nC
2009-08-18
Page 4
Rev. 2.1BSP125
1 Power dissipation
Ptot = f(TA)
020 40 60 80 100 120 °C 160
TA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9 BSP125
Ptot
2 Drain current
ID=f(TA)
parameter: VGS≥ 10 V
020 40 60 80 100 120 °C 160
TA
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
A
0.13 BSP125
ID
3 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TA = 25
10 010 110 210 3
V
VDS
-3
10
-2
10
-1
10
0
10
1
10
A
BSP125
ID
RDS(on) = VDS / ID
DC
10 ms
1 ms
tp = 270.0µs
4 Transient thermal impedance
ZthJA = f(tp)
parameter : D=tp/T
10 -5 10 -4 10 -3 10 -2 10 -1 10 010 110 210 4
s
tp
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP125
ZthJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2009-08-18
Page 5
Rev. 2.1BSP125
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj= 25 °C, VGS
0 1 2 3 4 5 6 7 8 V10
VDS
0
0.05
0.1
0.15
0.2
A
0.3
ID
10V
6.0V
5.0V
4.0V
3.8V
3.6V
3.2V
3.0V
2.8V
2.6V
6 Typ. drain-source on resistance
RDS(on) = f(ID)
parameter: Tj = 25 °C, VGS
00.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 A0.5
ID
0
20
40
60
Ω
100
RDS(on)
2.6V
2.8V
3.0V
3.2V
3.6V
4.0V
5.0V
6.0V
10V
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
00.5 11.5 22.5 33.5 4V5
VGS
0
0.1
0.2
0.3
A
0.5
ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
00.1 0.2 0.3 A0.5
ID
0
0.05
0.1
0.15
0.2
0.25
0.3
S
0.4
gfs
2009-08-18
Page 6
Rev. 2.1BSP125
9 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 0.12 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
20
40
60
80
100
120
140
Ω
170 BSP125
RDS(on)
typ
98%
(.) Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS;ID =94µA
-60 -20 20 60 100 °C 160
Tj
0
0.4
0.8
1.2
1.6
2
Ω
2.8
VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f(VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
0 8 16 24 32 40 V52
VDS
0
10
1
10
2
10
3
10
pF
C
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
00.4 0.8 1.2 1.6 22.4 V3
VSD
-3
10
-2
10
-1
10
0
10
A
BSP125
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2009-08-18
Page 7
Rev. 2.1BSP125
13 Typ. gate charge
VGS =f (QG); parameter: VDS ,
ID = 0.12 A pulsed, Tj = 25 °C
0 1 2 3 4 5 nC 6.5
QG
0
2
4
6
8
10
12
V
16 BSP125
VGS
0.2 VDS max
0.5 VDS max
0.8 VDS max
14 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
540
560
580
600
620
640
660
680
V
720
BSP125
V(BR)DSS
2009-08-18
Page 8
Rev. 2.1BSP125
