SDIN2C2-2G-T - SanDisk - Datasheet.Directory

(JC64 Package)

Product Manual

Preliminary Version 1.1

Document No. 80-36-00592

February 2007

SanDisk Corporation

Corporate Headquarters • 601 McCarthy Boulevard • Milpitas, CA 95035

Phone (408) 801-1000 • Fax (408) 801-8657

www.sandisk.com

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

SanDisk® Corporation general policy does not recommend the use of its products in life support applications where in a failure

or malfunction of the product may directly threaten life or injury. Per SanDisk Terms and Conditions of Sale, the user of SanDisk

products in life support applications assumes all risk of such use and indemnifies SanDisk against all damages. See “Disclaimer

of Liability.”

This document is for information use only and is subject to change without prior notice. SanDisk Corporation assumes no

responsibility for any errors that may appear in this document, nor for incidental or consequential damages resulting from the

furnishing, performance or use of this material. No part of this document may be reproduced, transmitted, transcribed, stored in

a re trievable manner or translated into any language or computer language, in any form or by any means, electronic,

mechanical, magnetic, optical, chemical, manual or otherwise, without the prior written consent of an officer of SanDisk

Corporation.

All parts of the SanDisk documentation are protected by copyright law and all rights are reserved.

SanDisk and the SanDisk logo are registered trademarks of SanDisk Corporation. Product names mentioned herein are for

identification purposes only and may be trademarks and/or registered trademarks of their respective companies.

SanDisk products are covered or licensed under one or more of the following U.S. Patent Nos. 5,070,032; 5,095,344; 5,168,465;

5,172,338; 5,198,380; 5,200,959; 5,268,318; 5,268,870; 5,272,669; 5,418,752; 5,602,987. Other U.S. and foreign patents

awarded and pending.

Lit. No. 80-36-00592 Rev. 1.1 (D2) 02/07 Printed in U.S.A.

Revision History

January 2007 Revision 1.0—Preliminary draft of initial release

February 2007 Revision 1.1—Added TOC; removed Section 2.6; corrected Fig. 2-2; revised capacitor specifications and

part numbers; eliminated warranty section.

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

TABLE OF CONTENTS

1. Introduction...................................................................................................1-1

1.1 General Description................................................................................1-1

1.2 Features...................................................................................................1-2

1.3 Document Scope.....................................................................................1-2

1.4 iNAND Standard ....................................................................................1-2

1.5 Functional Description............................................................................1-3

1.6 Technology Independence ......................................................................1-3

1.7 Defect and Error Management................................................................1-3

1.8 Wear Leveling.........................................................................................1-3

1.9 Automatic Sleep Mode ...........................................................................1-3

1.10 iNAND—SD Bus Mode........................................................................1-4

1.11 SPI Mode...............................................................................................1-5

2. Product Specifications...................................................................................2-1

2.1 Overview ................................................................................................2-1

2.2 Typical Card Power Requirements .........................................................2-1

2.3 Operating Conditions..............................................................................2-1

2.4 System Performance...............................................................................2-2

2.5 System Reliability and Maintenance ......................................................2-2

2.6 Physical Specifications...........................................................................2-3

3. iNAND Interface Description .......................................................................3-1

3.1 Pins and Registers...................................................................................3-1

3.2 Bus Topologies .......................................................................................3-3

3.3 Electrical Interface..................................................................................3-3

3.4 iNAND Registers....................................................................................3-3

3.5 Data Interchange Format and Card Sizes ...............................................3-8

4. iNAND Protocol Description........................................................................4-1

4.1 General ...................................................................................................4-1

4.2 SD Bus Protocol .....................................................................................4-1

4.3 Functional Description............................................................................4-1

Appendix A Power Delivery and Capacitor Specifications.........................A-1

Appendix B Ordering Information ..............................................................B-1

Appendix C Disclaimer of Liability ............................................................C-1

Chapter 1 – Introduction

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

1 Introduction

1.1 General Description

The SanDisk iNAND is a very small, flash storage device, designed specifically for storage

applications that put a premium on small form factor, low power and low cost. Flash is the

ideal storage medium for portable, battery-powered devices. It features low power

consumption and is non-vo latile, requiring no power to maintain the stored data. It also has

a wide operating range for temperature, shock and vibration. It is compatible with the JC64

FBGA 169, 0.5mm ball pitch, package.

SanDisk iNAND is well-suited to meet the needs of small, low power, electronic devices.

With form factors measuring 12mm x 16mm x 1.2 mm and 12mm x 18mm x 1.2mm,

iNAND is expected to be used in a wide variety of portable devices like mobile phones,

pagers, and voice recorders.

To support this wide range of applications, iNAND is offered with an SD Interface. The SD

interface product is f ully compatible with iNAND products, and provides a 4-b it da ta bus

for maximum performance. For compatibility with existing controllers, the iNAND offers,

in addition to these interfaces, an alternate communication -protocol based on the SPI

standard.

These interfaces allow for easy integration into any design, regardless of which type of

microprocessor is used. All device and interface configuration data (such as maximum

frequency and card identification) are stored on the device.

The SanDisk iNAND provides up to 8 GB of memory for use in mass storage applications.

In addition to the mass-storage-specific flash memory chip, iNAND includes an intelligent

controller, which manages interface protocols, data storage and retrieval, error correction

code (ECC) algorithms, defect handling and diagnostics, power management, wear

leveling, and clock control. Figure 1-1 is a block diagram of the SanDisk iNAND with SD

Interface.

Figure 1-1 SanDisk iNAND Block Diagram

SD Bus/SPI Bus

Interface Flash

Memory

SanDisk

Single Chip

Controller Control

Data In/Out

SanDisk iNAND2

Chapter 1 – Introduction

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

1.2 Features

SanDisk iNAND product features include the following.

►Up to 8 GB of data storage

►SD-protocol compatible

►Supports SPI Mode

►Designed for portable and stationary applications that require high performance and reliable

data storage

►Voltage range 2.7 V to 3.6 V

►Variable clock rate 0-25 MHz (default), 0-50MHz (high-speed)

► Up to 25 MB/sec bus transfer rate (using 4 parallel data lines)

►Correction of memory-field errors

►Built-in write protection features (permanent and temporary)

►Application-specific commands

►Standard footprint across all capacities

1.3 Document Scope

This document describes the key features and specifications of th e SanDisk iNAND as well

as the information required to interface it to a host system. Chapter 2 describes the physical

and mechanical properties of iNAND, Chapter 3 contains the pins and register overview,

and Chapter 4 gives a general overview of the SD protocol. Information about SPI Protocol

can be referenced in Section 7 of the SDA Physical Layer Specificatio n , Version 2.00.

1.4 iNAND Standard

SanDisk iNAND devices are fully compatible with the SDA Physical Layer Specification,

Version 2.00. This specification is available from the SD Card Association (SDA).

SD Card Association

2400 Cam i no R amon, Suite 375

San Ramon, CA 94583 USA

Telephone: +1 (925) 275-6615

Fax: +1 (925) 886-4870

E-mail: office@sdcard.org

Web site: www.sdcard.org

Chapter 1 – Introduction

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

1.5 Functional Description

The SanDisk iNAND contains a high-level, intelligent subsystem as shown in Figure 1-1.

This intelligent (microprocessor) subsystem provides many capabilities not found in other

types of memory cards. These capabilities includ e:

• Host independence from details of erasing and programming flash memory

• Sophisticated system for managing defects (analogous to systems found in magnetic

disk drives)

• Sophisticated system for error recovery including a powerful ECC

• Power management for low power operation

1.6 Technology Independence

The 512-byte sector size of the SanDisk iNAND is the same as that in an IDE magnetic

disk drive. To write or read a sector (or multiple sectors), the host software simply issues a

read or write command to the card. The command contains the address and number of

sectors to write or read. The host software then waits for the command to complete.

The host software does not get invo lved in the details of how the flash memory is erased,

programmed or read. This is extremely important because flash devices are expected to get

increasingly complex in the future. Because iNAND use an intelligent on-board controller,

host system software will not need to be updated as new flash memory evolves. In other

words, systems that support iNAND technology today will be able to access future SanDisk

devices built with n ew flash technology without having to update or change host software.

1.7 Defect and Error Management

The SanDisk iNAND contains a sophisticated defect and error management system. This

system is analogous to the systems found in magnetic disk drives and in many cases offers

enhancements. If necessary, iNAND will rewrite data from a defective sector to a good

sector. This is completely transparent to the host and does not consume any user data space.

The soft error rate specification for iNAND is much better than the magnetic disk drive

specification. In the extremely rare case that a read error does o ccur, iNAND has

innovative algorithms to recover the data. These defect and error management systems,

coupled with the solid state construction, give SanDisk iNAND unparalleled reliability.

1.8 Wear Leveling

Wear-leveling is an intrinsic part of the erase pooling functionality of iNAND.

1.9 Automatic Sleep Mode

A unique feature of iNAND is automatic entrance and exit from sleep mode. Upon

completion of an operation, cards enter sleep mode to conserve power if no further

commands are received in less than 5 milliseconds (ms). The host does not have to take any

action for this to occur. However, in order to achieve the lowest sleep current, the host

needs to shut down its clock to the card. In most systems, cards are in sleep mode except

when accessed by the host, thus conserving power.

Chapter 1 – Introduction

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

When the host is ready to access a card in sleep mode, any command issued to it will cause

it to exit sleep, and respond.

1.10 iNAND — SD Bus Mode

The following sections provide valuable information on SanDisk iNAND in SD Bus mode.

SanDisk iNAND devices are fully compliant with the SDA Physical Layer Specification,

Version 2.00. Card Specific Data (CSD) Register structures are compliant with CSD

Structure 1.0 and 2.0.

This section covers Negotiating Operating Conditions, Card Acquisition and Identification,

Card Status, Memory Array Partitioning, Read/Write Operations, Data Transfer Rate, Data

Protection in Flash Cards, Write Protection, Copy Bit, and CSD Register.

Additional p ra c t i cal card detect i on m e t hods can be fo u nd in appl i cat i o n n ot es pert ai ning to

the SDA Physical Layer Specification, Version 2.00.

Figure 1-2 Memory Array Partitioning

SanDisk iNAND2

Sector 1

Sector 2

Sector 3

Sector n

WP Group 0

Block

WP Group 1

WP Group 2

Block

Chapter 1 – Introduction

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Figure 1- 3 Data Transfer Formats

Table 1-1 Mode Definitions

Mode Description

Single Block In this mode the host reads or writes one data block in a pre-specified length. The

data block transmission is protected with 16-bit CRC that is generated by the

sending unit and checked by the receiving unit.

The block length for read operations is limited by the device sector size (512 bytes)

but can be as small as a single byte. Misalignment is not allowed. Every data block

must be contained in a single physical sector.

The block length for write operations must be identical to the sector size and the

start address aligned to a sector boundary.

Multiple Block This mode is similar to the single block mode, except for the host can read/write

multiple data blocks (all have the same length) that are stored or retrieved from

contiguous memory addresses starting at the address specified in the command.

The operation is terminated with a stop transmission command.

Misalignment and block length restrictions apply to multiple blocks and are identical

to the single block read/write operations.

1.11 SPI Mode

The SPI Mode is a secondary communication protocol for iNAND devices. This mode is a

subset of the SD Protocol, designed to communicate with an SPI channel, commonly found

in Motorola and other vendors’ microcontrollers. Table 1-1 contains names and

descriptions of SPI Mode functions. More information about SPI Mode can be found in

Section 7 or the SDA Physical Layer Specifica tion, Version 2.00.

Multiple Block Mode

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Start Address

(Write)

Start Address

(Read/Write)

Start Address

(Read)

Write

Start Address Stop Start

Read

Stop

Single Block Mode Misalignment Error

Chapter 2 – Product Specifications

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

2 Product Specifications

2.1 Overview

For details about the environmental, reliability and durability specifications, refer to

Section 8.1 of the SDA Physical Layer Specification, Version 2.00.

2.2 Typical Card Power Requirements

Table 2-1 iNAND Power Requirements (Ta=25°C@3.0V)

VDD (ripple: max, 60mV peak-to-peak) 2.7 V – 3.6 V

Value Measurement Average

Sleep 250 uA Max.

Read

Default Speed 100 mA Max.

High-Speed 200 mA Max.

Write

Default Speed 100

Max.

High-Speed 200 mA Max.

Note: Curre nt meas urement numbers are average over 1 second.

2.3 Operating Conditions

2.3.1 Operating and Storage Temperature Specifications

Table 2-2 Operating and Storage Temperatures

Operating -25° C to 85° C

Non-Operating: After soldered onto PC Board -40° C to 85° C

Temperature

Non-Operating: In Tape/Reel -10° C to 50° C

2.3.2 Moisture Sensitivity

The moisture sensitivity level for iNAND is MSL = 3.

Chapter 2 – Product Specifications

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

2.4 System Performance

All performance values for iNAND in Table 2-3 were measured using the following

conditions:

• Voltage range 2.7 V to 3.6 V

• Temperature -25° C to 85° C

Table 2-3 System Performance

Timing Maximum Value

Block Read Access Time 100 ms

Block Write Access Time 250 ms

CMD1 to Ready after Power-up 1000 ms

2.5 System Reliability and Maintenance

Table 2-4 Reliability and Maintenance Specifications

MTBF >1,000,000 hours

Preventative Maintenance None

Data Reliabilit y <1 non-recoverable error in 1014 bits read

Chapter 2 – Product Specifications

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

2.6 Physical Specifications

The SanDisk iNAND is a 169-pin, thin fine-pitched ball grid array (BGA). See Figure 2-1

(169-pin) for physical specifications and dimensions. See Figure 2-5 for a top view of the

pin definitions.

Figure 2-1 iNAND Specifications

Figure 2-2 iNAND Specifications (Top View)

(A, B)

Chapter 2 – Product Specifications

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Figure 2- 3 iNAND Specifi cati o ns (Detail A)

Figure 2- 4 iNAND Specifi cati o ns (De tail B)

Chapter 2 – Product Specifications

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Table 2-5 iNAND Package Specifications

Dimension in millimeters Dimension in in ches

Symbol Minimum Nominal Maximum Minimum Nominal Maximum

A --- --- 1.20 --- --- 0.047

A1 0.16 0.21 0.26 0.006 0.008 0.010

A2 0.785 0.835 0.885 0.031 0.033 0.035

c 0.17 0.21 0.25 0.007 0.008 0.010

D 11.90 12.00 12.10 0.469 0.472 0.476

E (A)1 15.90 16.00 16.10 0.626 0.630 0.634

E (B)2 17.90 18.00 18.10 .7047 .7087 .7126

D1 --- 1.50 --- --- 0.059 ---

D2 --- 3.50 --- --- 0.138 ---

D3 --- 5.50 --- --- 0.217 ---

D4 --- 6.50 --- --- 0.256 ---

E1 --- 6.50 --- --- 0.256 ---

E2 --- 10.50 --- --- 0.413 ---

E3 --- 12.50 --- --- 0.492 ---

E4 --- 13.50 --- --- 0.531 ---

e --- .50 --- --- 0.020 ---

b 0.25 0.30 0.35 0.010 0.012 0.014

aaa 0.10 0.004

bbb 0.10 0.004

ddd 0.08 0.003

eee 0.15 0.006

fff 0.05 0.002

MD/ME 14/14 14/14

1 These measurements are for the 16 x 12mm package.

2 These measurements are for the 18 x 12mm package.

Chapter 2 – Product Specifications

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Figure 2-5 iNAND Ball Array (Top View)

2 3 4 5 6 7 8 9 11 12 13 14

1 10

Chapter 3 – iNAND Interface Description

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

3 iNAND Interface Description

3.1 Pins and Registers

Table 3-1 contains the SanDisk iNAND functional pin assignment

Table 3-1 iNAND Pin Assignment

Pin No. Name Pin No. Name Pin No. Name Pin No. Name

A1 DNU D2 NC J2 NC N5 VSS

A2 DNU D3 NC J3 NC N6 NC

A3 DAT0 D4 NC J5 NC N7 NC

A4 DAT1 D12 DNU J10 VDD_F N8 NC

A5 DAT2 D13 DNU J12 DNU N9 NC

A6 NC D14 DNU J13 DNU N10 NC

A7 NC E1 NC J14 DNU N11 NC

A8 NC E2 NC K1 NC N12 NC

A9 NC E3 NC K2 NC N13 NC

A10 NC E5 NC K3 NC N14 DNU

A11 NC E6 VDD_F K5 NC P1 DNU

A12 NC E7 VSS K6 NC P2 DNU

A13 DNU E8 NC K7 NC P3 VDD_H

A14 DNU E9 NC K8 VSS P4 VSS

B1 DNU E10 NC K9 VDD_F P5 VDD_H

B2 DAT3 E12 DNU K10 NC P6 VSS

B3 NC E13 DNU K12 DNU P7 NC

B4 NC E14 DNU K13 DNU P8 NC

B5 NC F1 NC K14 DNU P9 NC

B6 NC F2 NC L1 NC P10 NC

B7 NC F3 NC L2 NC P11 NC

B8 NC F5 VDD_F L3 NC P12 NC

B9 NC F10 NC L12 DNU P13 DNU

B10 NC F12 DNU L13 DNU P14 DNU

B11 NC F13 DNU L14 DNU

Chapter 3 – iNAND Interface Description

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Pin No. Name Pin No. Name Pin No. Name Pin No. Name

B12 NC F14 DNU M1 NC

B13 NC G1 NC M2 NC

B14 DNU G2 NC M3 NC

C1 NC G3 NC M4 VDD_H

C2 FCAP G5 VSS M5 CMD

C3 NC G10 NC M6 CLK

C4 VSS G12 DNU M7 NC

C5 NC G13 DNU M8 NC

C6 VDD_H G14 DNU M9 NC

C7 NC H1 NC M10 NC

C8 NC H2 NC M11 NC

C9 NC H3 NC M12 DNU

C10 NC H5 NC M13 DNU

C11 NC H10 VSS M14 DNU

C12 DNU H12 DNU N1 DNU

C13 DNU H13 DNU N2 VSS

C14 DNU H14 DNU N3 NC

D1 NC J1 NC N4 VDD_H

SanDisk iNAND contains a set of information registers. Register descriptions and SDA

references are provided in Sect i on 5. 0 of the SDA Physical Layer Specification, Version

2.00.

Table 3-2 iNAND Register Overview

CID 128 Card Identification Number

RCA 16 Relative Card Address

CSD 128 Card Specific Data

SCR 64 SD Configuration

OCR 32 Operation Conditions

SSR 512 SD Status

CSR 32 Card status; information about the card status.

Chapter 3 – iNAND Interface Description

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

3.2 Bus Topologies

SanDisk iNAND products support two communication protocols: SD and SPI. For more

details, refer to Section 3.5 of t he SDA Physical Layer Specification , Version 2.00. Section

6 of the specification contains a bus circuitry diagram for reference.

3.2.1 SD Bus

For more details, refer to Section 3.5.1 of the SDA Physical Layer Specification, Version

2.00.

3.2.2 SPI Bus

For more details, refer to Section 3.5.2 of the SDA Physical Layer Specification, Version

2.00.

3.3 Electrical Interface

The power scheme of SanDisk iNAND is handled locally in each card and in the bus

master. Refer to Section 6.4 of the SDA Physical Layer Specification, Version 2.00.

3.3.1 Power Up

Refer to Sectio n 6.4.1 of the SDA Physical Layer Specification, Version 2.00.

3.3.2 Bus Operating Conditions

SPI Mode bus operating conditions are identical to SD Bus Mode operating conditions. For

details, see Section 6.6 of the SDA Physical Layer Specification, Version 2.00.

3.3.3 Bus Timing (Default)

See Section 6.7 of the SD A Physical Layer Specification, Version 2.00.

3.3.4 Bus Timing (High-Speed Mode)

See Section 6.8 of the SD A Physical Layer Specification, Version 2.00.

3.4 iNAND Registers

There is a set of eight registers within the iNAND interface. For specific information about

each register, refer to Section 5 of the SDA Physical Layer Specification, Version 2.00.

3.4.1 Operating Conditions Register

The Operation Conditions Register (OCR) stores the VDD voltage profile for iNAND.

Refer to Sectio n 5.1 of the SDA Physical Layer Specification, Version 2.00.

3.4.2 Card Identification Register

The Card Identification (CID) Register is 16 bytes long and contains the unique card

identification number. It is programmed during manuf acturing and cannot be changed by

iNAND hosts. See Table 3-4.

Chapter 3 – iNAND Interface Description

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Table 3-4 CID Register Definitions

Name Type Width CID Value Comments

Manufacturer ID

(MID) Binary 8 0x03 Manufacturer IDs are controlled and

assigned by the SD-3C, LLC

OEM/Application ID

(OID) ASCII 16 SD ASCII Code

0x53, 0x44 Identifies the card OEM and/or the card

contents. The OID is controlled and

assigned by the SD-3C, LLC

ST08G

ST04G

ST02G

ST01G

Product Name

(PNM) ASCII 40

ST512

Five ASCII characters long

Product Revision

(PRV) BCD 8 Product

Revision xx See Section 5.2 in the SDA Physical

Layer Specification, Version 2.00

Serial Number

(PSN) Binary 32 Product Serial

Number 32-bit unsigned integer

Reserved --- 4 --- ---

Manufacture Date

Code (MDT) BCD 12 Manufacture

date (for ex.

April 2001=

0x014)

Manufacturing date—yym (offset from

2000)

CRC7 checksum

(

CRC

)

Binary 7 CRC7* Calculated

Not used, always --- 1 --- ---

Note: SD-3C, LLC is a limited liability company established by Matsushita Electric Industrial Co. Ltd.,

SanDisk Corporation and Toshiba Corporation.

*The CRC checksum is computed by using the following formula: CRC Calculation: G(x)

= x7+x3+1

M(x)=(MID-MSB)*x119+…+(CIN-LSB)*x0

CRC[6…0]=Remainder[(M(x)*x7)/G(x)]

Chapter 3 – iNAND Interface Description

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

3.4.3 Card Specific Data Register

The Card Specific Data (CSD) Register configuration information is required to access

iNAND data. The CSD defines the data format, error correction type, maximum data

access time, etc. The field structures of the CSD Register vary de pending on the physical

specifications and card capacity. The CSD_STRUCTURE field in the CSD Register

indicates which structure version is used. Table 3-5 shows the version number as it relates

to the CSD structure. Refer to Section 5.3.1 of the SDA Physical Layer Specification,

Version 2.00 for more information.

Table 3-5 CSD Register Structur es

CSD_STRUCTURE CSD Structure Version Valid for SD Memory Card Physical

Specification Version / C ard Capacity

Version 1.01 to 1.10 0 CSD Version 1.0

Version 2.00 / Standard Capacity

1 CSD Version 2.0 Version 2.00 / High Capacity

2-3 Reserved ---

Table 3-6 provides an overview of the CSD Register. More field-specific information can

be found in Section 5.3.2, Table 5-4 of the SDA Physical Layer Specification, Version 2.00.

Table 3-6 CSD Register (CSD Versi on 1. 0)

Field CSD Value Description

CSD_ STRUCTURE 1.0 CSD structure

--- --- Reserved

TAAC

1.5 msec Data read access time-1

NSAC 0 Data read access time-2 in CLK cycles

(NSAC*100)

Default 25MHz TRANS_ SPEED

High-speed 50MHz

Max. data transfer rate

CCC All (inc. WP,

lock/unlock) Card command classes

READ_BL_ LEN 2G

Up to 1G Max. read data block length

READ_BL_ PARTIAL Yes Partial blocks for read allowed

WRITE_BLK_ MISALIGN No Write block misalignment

READ_BLK_ MISALIGN No Read block misalignment

DSR_IMP No DSR implemented

--- --- Reserved

C_SIZE 2 GB

1 GB

512 MB

Device size

VDD_R_ CURR_MIN According to card

performance Max. read current @VDD min.

VDD_R_ CURR_MAX According to card Max. read current @VDD max.

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Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Field CSD Value Description

performance

VDD_W_ CURR_MIN According to card

performance Max. write current @VDD min.

VDD_W_ CURR_MAX According to card

performance Max. write current @VDD max.

C_SIZE_ MULT 2G=2048

1G=1024

512=512

Device size multiplier

ERASE_BLK_EN Yes Erase single block enable

SECTOR_ SIZE 32 blocks Erase sector size

WP_GRP_ SIZE 128 sectors Write protect group size

WP_GRP_ ENABLE Yes Write protect group enable

Reserved --- Reserved for MMC compatibility

R2W_ FACTOR x16 Write speed factor

WRITE_BL_ LEN 2G

Up to 1G Max. write data block length

WRITE_BL PARTIAL No Partial blocks for write allowed

--- --- Reserved

FILE_ FORMAT_ GRP 0 File format group

COPY Has been copied Copy flag (OTP)

PERM_ WRITE_

PROTECT Not protected Permanent write protection

TMP_WRITE_PROTECT Not protected Temporary write protection

FILE_ FORMAT HD w/partition File format

Reserved --- Reserved

CRC CRC7 CRC

--- --- Not used, always “1”

Chapter 3 – iNAND Interface Description

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Refer to Sectio n 5.3.3, Table 5-16 of the SDA Physical Layer Specification, Version 2.00

for more detailed information.

Table 3-7 CSD Register (CSD Versi on 2. 0)

Field CSD Value Description

CSD_ STRUCTURE 2.0 CSD structure

--- --- Reserved

TAAC

1.5 ms Data read access time-1

NSAC 0 Data read access time-2 in CLK cycles

(NSAC*100)

Default 25MHz TRANS_ SPEED

High-speed 50MHz

Max. data transfer rate

CCC 010110110101b Card command classes

READ_BL_ LEN --- Max. read data block length

READ_BL_ PARTIAL Yes Partial blocks for read allowed

WRITE_BLK_ MISALIGN No Write block misalignment

READ_BLK_ MISALIGN No Read block misalignment

DSR_IMP No DSR implemented

--- 0 Reserved

8 GB C_SIZE

4 GB

Device size

--- 0 Reserved

ERASE_BLK_EN 1 Erase single block enable

SECTOR_ SIZE 32 blocks Erase sector size

WP_GRP_ SIZE 128 sectors Write protect group size

WP_GRP_ ENABLE Yes Write protect group enable

Reserved --- Reserved for MMC compatibility

R2W_ FACTOR x16 Write speed factor

WRITE_BL_ LEN --- Max. write data block length

WRITE_BL PARTIAL No Partial blocks for write allowed

--- --- Reserved

FILE_ FORMAT_ GRP 0 File format group

COPY Has been copied Copy flag (OTP)

PERM_ WRITE_

PROTECT Not protected Permanent write protection

TMP_WRITE_PROTECT No protected Temporary write protection

FILE_ FORMAT HD w/partition File format

Reserved --- Reserved

Chapter 3 – iNAND Interface Description

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Field CSD Value Description

CRC CRC7 CRC

--- --- Not used, always “1”

3.4.4 Card Status Register

The Card Status Register (CSR) transmits the card’s status information (wh ich may be

stored in a local status register) to the host. The CSR is defined in Section 4.10.1 in the

SDA Physical Layer Specification, Version 2.00.

3.4.5 SD Status Register

The SD Status Register (SSR) contains status bits that are related to iNAND proprietary

features and may be used for future applications. The SD Status structure is described in

Section 4.10.2 in the SDA Physical Layer Specification, Version 2.00.

3.4.6 Relative Card Address Register

The 16-bit Relative Card Addr ess (R CA ) Register carries the card address published by

the card during the card identification. Refer to Section 5.4 in the SDA Physical Layer

Specification, Version 2.00 for more information.

3.4.7 SD Card Configuration Register

The SD Card Configuration Register (SCR) is in addition to the CSD Register. The SCR

provides information about special features in SanDisk iNAND. For more information,

refer to Section 5.6 in the SDA Physical Layer Specification, Version 2.00.

3.4.8 SD Card Registers in SPI Mode

All registers are accessible in SPI Mode. Their format is identical to the format in the SD

Bus Mode, however a few fields are irrelevant in SPI Mode. In SPI Mode, the Card Status

Layer Specification, Version 2.00. for more details.

3.5 Data Interchange Format and Card Sizes

In general, a file system provides structure for iNAND data. The SD Card File System

Specification, published by the SD Association, describes the file format system

implemented in the SanDisk iNAND.

Chapter 3 – iNAND Interface Description

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Table 3-8 User Area DOS Image Parameters

Capacity* Total

LBAs Number of

Partition

System Area

Sectors

Total Partition

Sectors User Data

Bytes

8 GB 16,055,296 8192 16,047,104 16,038,912 3,073,376,256

4 GB 8,026,112 8192 8,017,920 8,009,728 4,100,980,736

2 GB 4,013,056 523 4,011,595 4,011,072 2,053,668,864

1 GB 2,006,528 523 2,005,675 2,005,152 1,026,637,824

512 MB 1,003,264 279 1,002,727 1,002,448 513,253,376

*1 megabyte (MB) = 1 million bytes; 1 gigabyte (GB) = 1 billion bytes. Some of the listed capacity is used

for formatting and other functions, and thus is not available for data storage.

Chapter 4 – iNAND Protocol Description

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

4 iNAND Protocol Description

4.1 General Description

iNAND protocol information is contained in this chapter; information includes bus

protocol, card identification, and a functional description.

4.2 SD Bus Protocol

Communication over the SD bus is based on command and data-bit streams initiated by a

start bit and terminated by a stop bit. See Section 3.6.1 of the SDA Physical Layer

Specification, Version 2.00 for details.

4.3 Functional Description

The host controls all communication between itself and iNAND. To demonstrate how this

communication works, this section provides a general overview of the card identification

and data transfer modes; commands; card dependencies; various card operation modes and

restrictions for controlling the clock signal. All iNAND commands, together with

corresponding responses, state transitions, error conditions, and timings are also provided.

For detailed information, refer to Section 4 of the SDA Physical Layer Specification,

Version 2.00.

4.3.1 Card Identification Mode

In Card Identification Mode the host resets all cards, validates operation voltage range,

identifies and requests cards to publish a relative card address. For more information see

Section 4.2 in the SDA Physical Layer Specification, Version 2.00.

4.3.2 Data Transfer Mode

In Data Transfer Mode, the host may operate iNAND in the fPP frequency range. This

section contains information about data read and write, erase, write protect management,

card lock/unlock operations, application-specific commands, the switch function command,

high-speed mode, the command system, the Send Interface Condition command (CMD8).

CMD8 is part of identification mode and command functional differences in high capacity

iNAND. For more detailed information, refer to Section 4.3 of the SDA Physical Layer

Specification, Version 2.00.

4.3.3 Clock Control

The host can use the bus clock signal in iNAND to switch them to energy saving mode or

to control data flow on the bus. See Section 4.4 of the SDA Physica l Layer Specification,

Version 2.00.

Chapter 4 – iNAND Protocol Description

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

4.3.4 Cyclic Redundancy Codes

The Cyclic Redundancy Check (CRC) protects against transmission errors that may occur

on the iNAND bus. Detailed info rmation and examples for CRC7 an d CRC16 are provided

in Section 4.5 of the SDA Physical Layer Specification, Version 2.00.

4.3.5 Error Conditions

See Section 4.6 of the SD A Physical Layer Specification, Version 2.00.

4.3.6 Commands

See Section 4.7 of the SDA Physical Layer Specification, Version 2.00 for detailed

information about iNAND commands.

4.3.7 Card State Transition

The state transition is dependent on the received command. The transition is defined in

Section 4.8 of the SDA Physical Layer Specification, Version 2.00 along with responses

sent on the command line.

4.3.8 Timing Diagrams and Values

See Section 4.12 of the SDA Physical Layer Specification, Version 2.00.

4.3.9 Speed Clas s Specification

The speed class specification classifies card performance by speed class number and offers

the method to calculate performance. For more information, refer to Section 4.13 of the

SDA Physical Layer Specification, Version 2.00.

4.3.10 Erase Timeout Calculation

See Section 4.14 of the SDA Physical Layer Specification, Version 2.00.

Appendix A –Power Delivery/Capacitor Specifications

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Appendix A Power Delivery and Capacitor Specifications

A.1 SanDisk iNAND Power Domains

SanDisk iNAND has three power domains assigned to VDD_H, VDD_F, and FCAP as

shown in Table 1.

Table 1. Power Domains

Pin Power Domain Comments

Supported voltage ranges:

High Voltage Region: 3.3V (nominal)

VDD_H Host Interface

Low Voltage Region: 1.8V (nominal)

Supported voltage range: VDD_F Memory

High Voltage Region: 3.3V (nominal)

FCAP Internal FCAP is the internal regulator connection to an

external decoupling capacitor.

A.2 Capacitor Connection Guidelines

A.2.1 FCAP Connections

The FCAP (C2) ball must only be connected to an external capacitor that is connected to

VSS. This signal may not be left floating. The capacitor ’s specifications and its placement

instructions are detailed below.

The capacitor is part of an internal voltage regulator that provides power to the controller.

Caution: Failure to follow the guidelines below or connecting the FCAP ball to any

external signal or power supply may cause the device to malfunction.

The trace requirements from the FCAP (C2) ball to the capacitor are as follows:

• Resistance: <2 ohm

• Inductance: <5 nH

The capacitor requirements are as follows:

• Capacitance: >=2.2 uF

• Voltage Rating: >=6.3 V

• Dielectric: X7R or X5R

Appendix A –Power Delivery/Capacitor Specifications

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

A.2.2 VDD_H and VDD_F Connections

The iNAND has two power domains labeled: VDD_H and VDD_F. Currently both power

domains can be connected to the same 3.3V (nom) power supply. However, in order to

provide maximum flexibility and support low power operation in future iNAND devices,

the PCB should be desig ne d as foll ows:

• All VDD_F balls should be connected to a 3.3V supply

• All VDD_H balls should have the option of being connected either to a 3.3V or 1.8V

supply

SanDisk recommends providing separate bypass capacitors for each power domain as

shown in Figure 1.

Note: Signal routing in the diagram is for illustration purposes only and the final routing

depends on your PCB layout. Also, for clarity, the diagram does not show the VSS

connection. All balls marked VSS should be connected to a ground (GND) plane.

Figure 1. Recommended Power Domain Connections

J10

VDD_

VDD

VDD_

ABCDEFGHJKLMNP

VDD_H

VDD_F

C_1 C_2C_3 C_4C_5

VSS VSS VSS VSS VSS

C_1=C_3>=2.2uF

C_2=C_4<=100nF

Close to

Ball F5 Close to

Ball P3

Capacitor C_5:

Capacitance > = 2.2uF

Voltage >= 6.3V

Dielectric: X7R or X5R

Trace Requirements (C_5):

Resista nce < 2 ohm

Inductance < 5nH

FCAP

Top

View

VDD_H

power

supply

VDD_F = 3.3V (nom )

Appendix B –Ordering Information

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Appendix B Ordering Information

B.1 iNAND (JC64 Package)

To order SanDisk products directly from SanDisk, call (408) 801-1000.

Part Number Block Size1

12 mm x 16 mm x 1.2 mm Package

SDIN2C1-512M 512 MB

SDIN2C2-1G 1 GB

SDIN2C2-2G 2 GB

12 mm x 18 mm x 1.2 mm Package

SDIN2B2-2G 2 GB

SDIN2B2-4G 4 GB

SDIN2B2-8G 8 GB

Note: If parts will be shipped by tape/reel, add “T” to the

end of the part number. For example, SDIN2B2-8G would

become SDIN2B2-8G-T.

1 1 megabyte (MB) = 1 million bytes; 1 gigabyte (GB) = 1 billion bytes. Some of the listed capacity is used for

formatting and other functions, and thus is not available for data storage.

Appendix C –Disclaimer of Liability

Revision 1.1 PRELIMINARY SanDisk iNAND Product Manual

Appendix C Disclaimer of Liability

C.1 SanDisk Corporation Policy

SanDisk Corporation general policy does not recommend the use of its products in life

support applications wherein a failure or malfunction of the product may directly threaten

life or injury. Accordingly, in any use of products in life support systems or other

applications where failure could cause damage, injury or loss of life, the products should

only be incorporated in systems designed with appropriate redundancy, fault tolerant or

back-up features.

SanDisk shall not be liable for any loss, injury or damage caused by use of the Products in

any of the following applications:

− Special applications such as military related equipment, nuclear reactor control, and

aerospace

− Control device s for automotive vehicles, train, ship and traffic equipment

− Safety system for disaster prevention and crime prevention

− Medical-related equipment including medical measurement device