Q Zz o in | ol eI rt rt) 4VEED OUSL aD DESCRIPTION MPS6512S transistors designed for purpose amplifier applications. is NPN silicon planar general ABSOLUTE MAXIMUM RATINGS NPN SILICON TRANSISTOR TO-92A 04.68(0.18) co 3 | 4.600, bio-@ all | le. 760,35) MIN, tk 0,4500.018> UNIT: MMCINCHD) 0.4 (0,016) 0.51 KO.02> 2.54 AD BOTTOM VIEW Collector-Base Voltage VCBO 40V Collector-Emitter Voltage VCEO 30V Emitter-Base Voltage VEBO AV Collector Current IC 100mA Continuous Power Dissipation Pd 350mW Operating & Storage Junction Temperature Tj, Tstg -55 to +150C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C) PARAMETER SYMBOL | MIN MAX} UNIT CONDITIONS Collector-Emitter Breakdown Voltage | BVCEO 30 VY fIC=0.5mA IB=0 Emtter-Base Breakdown Voltage BVEBO 4 Vv |TB=10pA IC=0 Collector Cutoff Current ICBO 50 nA |VCB=30V TE=0 D.C. Current Gain HFE* 50 120 IC=2mA VCE=10V 30 IC=100mA VCE=10V Collector-Emitter Saturation Voltage VCE(sat) 0.5 Vo fiC=50mA IB=5mA Current Gain Bandwidth Product fT 150 TYP | MHz |IC=2mA VCE=10V f=20MHz Output Capacitance Cob 3.5 pF |VCB=10V 1MHz Noise Figure NF 2 TYP dB jIC=10pA VCE=5V Rs=10Kohm f=1kHz * Pulse test : pulse width <300pS, duty cycle < 2%. MICRO ELECTRONICS LTD. 38, Hung To Road, Microtron Building, Kwun Tong, Kowloon, Hong Kong. Kwun Tong P.O. Box 69477 Hong Kong. Fax No. 2344 6321 Telex:43510 Micro Hx. Tel 2343 0181-5