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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS20KMA-5A FS20KMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS20KMA-5A OUTLINE DRAWING Dimensions in mm 3 0.3 6.5 0.3 2.8 0.2 3.2 0.2 3.6 0.3 14 0.5 15 0.3 10 0.3 1.1 0.2 1.1 0.2 0.75 0.15 2.6 0.2 10V DRIVE VDSS ............................................................................... 250V rDS (ON) (MAX) .............................................................. 0.20 ID ......................................................................................... 20A 0.75 0.15 2.54 0.25 4.5 0.2 2.54 0.25 GATE DRAIN SOURCE TO-220FN APPLICATION CRT Display monitor, SMPS, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Ratings Unit VDSS Drain-source voltage VGS = 0V 250 V VGSS ID IDM Gate-source voltage Drain current Drain current (Pulsed) VDS = 0V 20 20 60 V A A IDA PD Tch Tstg Viso Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage L = 200H 20 40 -55 ~ +150 -55 ~ +150 2000 A W C C V Weight Typical value 2.0 g -- Parameter Conditions AC for 1minute, Terminal to case Sep. 2001 MITSUBISHI Nch POWER MOSFET FS20KMA-5A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) Output capacitance Reverse transfer capacitance Turn-on delay time Rise time tf VSD Turn-off delay time Fall time Source-drain voltage Rth (ch-c) Thermal resistance Limits Test conditions Unit Min. Typ. Max. ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 250V, VGS = 0V 250 -- -- -- -- -- -- 0.1 1 V A mA ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V 2.0 -- -- -- 3.0 0.15 1.50 20.0 4.0 0.20 2.00 -- V V S -- -- -- -- 2250 220 65 35 -- -- -- -- pF pF pF ns -- -- -- -- 70 400 100 1.5 -- -- -- 2.0 ns ns ns V -- -- 3.13 C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50 IS = 10A, VGS = 0V Channel to case PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 tw = 10s 101 100s 7 5 3 2 1ms 100 10ms 7 5 TC = 25C Single Pulse 3 2 DC 10-1 0 50 100 150 7 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 50 20 PD = 40W VGS = 20V,10V,8V,6V,5V VGS = 20V,10V,8V,6V 40 TC = 25C Pulse Test 30 5V 20 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 7 5 3 2 16 TC = 25C Pulse Test PD = 40W 12 8 4.5V 4 4V 4V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 1.0 2.0 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS20KMA-5A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 TC = 25C Pulse Test 16 12 8 ID = 40A 4 20A DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 20 TC = 25C Pulse Test 0.4 0.3 VGS = 10V 0.2 0.1 20V 10A 0 0 4 8 12 16 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 5 3 2 40 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 50 30 20 10 0 TC = 25C VDS = 10V Pulse Test 0 4 8 12 16 7 5 3 2 20 TC = 25C,75C,125C 100 7 5 3 2 VDS = 10V Pulse Test 7 100 2 3 5 7 101 2 3 5 7 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 5 5 3 2 Ciss 103 7 5 3 2 Coss 102 7 5 Crss 3 Tch = 25C 2 VGS = 0V f = 1MHz 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) td(off) 3 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 101 2 tf 102 tr 7 5 td(on) 3 2 101 7 5 Tch = 25C VGS = 10V VDD = 150V RGEN = RGS = 50 7 100 2 3 5 7 101 2 3 5 7 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS20KMA-5A HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 50V 100V 150V 12 8 4 TCh = 25C ID = 20A 0 40 80 120 160 TC = 25C 24 75C 125C 16 1.6 0.8 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 3 2 100 7 5 3 2 -50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (C) 0.4 0 GATE CHARGE Qg (nC) VGS = 10V 7 ID = 10A 5 Pulse Test 1.4 VGS = 0V Pulse Test 8 0 101 10-1 32 200 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) 40 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch -c) (C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 = 0.5 2 100 7 5 3 2 10-1 7 5 3 2 = 0.2 = 0.1 = 0.05 = 0.02 = 0.01 Single Pulse PDM tw T D= tw T 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep. 2001