Features * * * * * * Frequency Range 4.9 GHz to 5.9 GHz Linear POUT Typically 21 dBm Gain Typically 20 dB Power Detector On-chip VCC 3.1 V to 3.5 V Package: QFN16 Benefits 5-GHz WLAN Power Amplifier for 802.11a * Biasing Control Extends Battery Life Time * AC Input Coupling Saves External Capacitors * Very Suitable for PCMCIA Cards Type 1 (Thickness 3.3 mm) Electrostatic sensitive device. Observe precautions for handling. ATR3515 Description Preliminary Process The 5-GHz power amplifier is designed in Atmel's advanced Silicon-Germanium (SiGe) process and provides excellent noise performance as well as good poweradded efficiency. Circuitry The PA consists of a two-stage amplifier with a linear output power of 21 dBm. The output stage was realized using an open-collector structure. Power-up/down and output level are controlled at bias control pin 6 (Vctl). An on-chip power detector provides a voltage proportional to the output power. Figure 1. Block Diagram Vcc1 15 Vcc2 13 ATR3515 RFin 3 RFout 11 RFout 10 Matching Power Detector Bias control 6 Vctl 16 Vcc_ctl 7 Vdet_out Rev. 4514G-WLAN-09/03 Pin Configuration Vcc_ctl Vcc1 GND Vcc2 Figure 2. Pinning QFN16 16 15 14 13 12 GND 1 2 ATR3515 11 RFout 10 RFout 3 4 Gnd on the Paddel 9 GND 5 6 7 8 GND Vctl Vdet_out GND GND NC RFin GND Pin Description 2 Pin Symbol 1 GND Function 2 NC 3 RFin RF input 4 GND Ground 5 GND Ground 6 Vctl Power-up/biasing control voltage 7 Vdet_out 8 GND Ground 9 GND Ground 10 RFout RF output 11 RFout RF output 12 GND Ground 13 Vcc2 Supply voltage for PA stage 14 GND Ground 15 Vcc1 Supply voltage for driver stage 16 Vcc_ctl Paddel - Ground Not connected Power detector output voltage Supply voltage for biasing control Ground ATR3515 [Preliminary] 4514G-WLAN-09/03 ATR3515 [Preliminary] Electrical Characteristics VCC = 3.3 V, Frequency = 5.25 GHz, Tamb = 25C, unless otherwise specified No. Parameters 1.0 Frequency range 1.1 Ambient temperature range 1.2 Supply voltage 1.3 Linear output power Single tone signal Plin 1.4 P1dB output power Single tone signal P1dB PA operating mode Vctl Power down Vctl 1.5 1.6 Control voltage range Test Conditions Max. Unit Type* 4.90 5.90 GHz A Tamb -25 +75 C C VCC 3.1 3.5 V A 21 dBm A 26.5 dBm A 1.9 V A 0.2 V A 0.5 0.6 s C -12 -8 dB C at 11 MHz offset from carrier -22 dBr B at 20 MHz offset from carrier -30 dBr B at 30 MHz offset from carrier -42 dBr B 4.5 % C 36 dB C 1.7 Turn on/off time "ON" is the time that ICC returns to normal and "OFF" is the time the current needs to decrease to 10% of normal mode 1.8 Input and output return loss With external matching 1.9 1.10 Spectrum mask(1) 1.11 Pin Symbol Min. f Typ. 3.3 1.3 ton/off 1.12 Error Vector Magnitude(1) EVM 1.13 Reverse isolation ISOr 1.14 Output power saturation For reference Psat 28 dBm C 1.15 Power added efficiency At operation point for 21 dBm output power(2) PAE 12 % A 1.16 Current consumption At operation point for 21 dBm output power(3) Icc 320 mA A 1.17 Gain linear Gl 20 dB A dB A 0.02 V A 1.9 V A 2.4 V A 0.5 s C 1.18 Gain deviation 2.0 Power Detector 2.1 Voltage Vdetmin 2.2 2.3 2.4 Voltage Vdetmax Settling time Within 200 MHz frequency band Gd Pdetmin = 2 dBm Vdetmin Pdetmax = 21 dBm Pdetmax = 28 dBm Vdetmax 30 -1 390 +1 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. OFDM signal according to 802.11a specification with Pout = 21 dBm at 54 Mbps. 2. Due to the linearity requirements in an OFDM system, the power amplifier operates in the linear mode of class-A. 3. The current consumption of the PA can be controlled by the pin Vctl. For lower output power demand, the current can be reduced, while the power gain remains nearly constant. 3 4514G-WLAN-09/03 Figure 3. Application Circuit Vcc_ctl Vcc1 Vcc2 * Output ATR3515 Input * * * microstrip line Vctl 4 Vdet_out ATR3515 [Preliminary] 4514G-WLAN-09/03 ATR3515 [Preliminary] Ordering Information Extended Type Number Package Remarks ATR3515-PES QFN16 - 4x4 Tube, MOQ 750 ATR3515-PEQ QFN16 - 4x4 Taped and reeled, MOQ 6,000 Package Information 5 4514G-WLAN-09/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life support devices or systems. (c) Atmel Corporation 2003. All rights reserved. Atmel (R) and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4514G-WLAN-09/03