MRF151G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS ID 40 A VDSS 125 V VGS 40 V PDISS 500 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C JC 0.35 C/W O O O O O 1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE O CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVDSS ID = 100 mA IDSS VDS = 50 V VGS = 0 V 5.0 mA IGSS VDS = 0 V VGS = 20 V 1.0 A VGS(th) ID = 100 mA VDS = 10 V 5.0 V VDS(on) ID = 10 A VGS = 10 V 5 V gfs ID = 5.0 A VDS = 10 V Ciss Coss Crss VDS = 50 V VGS = 0 V Gps VDD = 50 V f = 175 MHz IDQ = 500 mA V 125 1.0 mhos 5.0 f = 1.0 MHz Pout = 300 W VSWR = 5:1 AT ALL PHASE ANGLES 14 50 350 250 15 pF 16 55 dB % NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Advanced Semiconductor, Inc.: MRF151G