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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2004 Fairchild Semiconductor Corporation Rev. A, April 2004
MMBTH10RG
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady lim its. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Thermal Charac t eris ti cs
T
a
=25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol Parameter Ratings Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base V oltage 40 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Collector Current - Continuous 50 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Sustaining Voltage * I
C
= 1.0 mA, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10 µA, I
E
= 0 40 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 1.0 µA, I
C
= 0 4.0 V
I
CBO
Collector Cutoff Current V
CB
= 30 V, I
E
= 0 100 nA
On Characteristics
h
FE
DC Current Gain I
C
= 1.0 mA, V
CE
= 6.0 V 50 120 V
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 5.0 mA 0.2 V
Small Signal Characteristics
f
T
Current Gain - Bandwidth P roduc t I
C
= 2.0 mA, V
CE
= 10 V,
f = 100 MHz 450 MHz
C
cb
Collector-Base Capacitance V
CB
= 10 V, I
E
= 0, f = 1.0 MHz 0.6 pF
rb’Cc Collector Base Time Cons tant I
C
= 5.0 mA, V
CB
= 10 V,
f = 79.8 MHz 12 pS
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C225
1.8 mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 556 °C/W
MMBTH10RG
NPN RF Transistor
• This device is designed for use in low noise UHF/VHF amplifiers, with
collector currents in the 100 µA to 20 mA range in common emitter or
common base mode of operations, and in low frequency drift, high
output UHF oscillators.
• Sourced from process 42. SOT-23
B
E
C
Mark: 3E
1. Base 2. Emitter 3. Collector
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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