1350A
PHASE CONTROL THYRISTORS Hockey Puk V ersion
ST780C..L SERIES
1
Bulletin I25192 rev. B 02/94
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Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 1350 A
@ Ths 55 °C
IT(RMS) 2700 A
@ Ths 25 °C
ITSM @ 50Hz 24400 A
@ 60Hz 25600 A
I2t@
50Hz 2986 KA2s
@ 60Hz 2726 KA2s
VDRM/VRRM 400 to 600 V
tqtypical 150 µs
TJ- 40 to 125 °C
Parameters ST780C..L Units
Major Ratings and Characteristics case style TO-200AC (B-PUK)
ST780C..L Series
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Bulletin I25192 rev. B 02/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V DRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
04 400 500
06 600 700
IT(AV) Max. average on-state current 1350 (500) A 180 ° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 2700 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one-cycle 24400 t = 10ms No voltage
non-repetitive surge current 25600 A t = 8.3ms reapplied
20550 t = 10ms 100% VRRM
21500 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 2986 t = 10ms No voltage Initial TJ = TJ max.
2726 t = 8.3 ms reapplied
2112 t = 10ms 100% VRRM
1928 t = 8.3ms r eapplied
I2√t Maximum I2√t for fusing 29860 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.31 V Ipk= 3600A, T J = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILTypical latching current 1000
0.80 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.14 (16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max.
0.13 (I > π x IT(AV)),TJ = TJ max.
Parameter ST780C..L Units Conditions
0.90 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25°C, anode supply 12V resistive load
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, d ig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST780C..L Units Conditions
Switching
1000 A/µs
tdTypical delay time 1.0
tqTypical turn-off time 150
µs
ST780C..L 80
ST780C..L Series
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Bulletin I25192 rev. B 02/94
3
dv/dt Maximum critical rate of rise of
off-state voltage
IDRM Max. peak reverse and off-state
IRRM leakage current
Blocking
500 V/µsT
J = TJ max. linear to 80% rated VDRM
Parameter ST780C..L Units Conditions
80 mA TJ = TJ m ax, rated V DRM/VRRM applied
PGM Maximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 2.0 T J = TJ m ax, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A T J = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
TJ = - 40°C
mA TJ = 25°C
TJ = 125°C
TJ = - 40°C
VT
J = 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 m A
Parameter ST780C..L Units Conditions
20
5.0
Triggering
TYP. MAX.
200 -
100 200
50 -
2.5 -
1.8 3.0
1.1 -
VGD DC gate voltage not to trigger 0.25 V TJ = TJ max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
VGT DC gate voltage required
to trigger
IGT DC gate current required
to trigger
W
VTJ = TJ max, tp ≤ 5ms
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.073 DC operation single side cooled
junction to heatsink 0.031 DC operation double side cooled
RthC-hs Max. thermal resistance, 0.011 DC operation single side cooled
case to heatsink 0.006 DC operation double side cooled
F Mounting force, ± 10% 14700 N
(1500) (Kg)
wt Approximate weight 255 g
Parameter ST780C..L Units Conditions
K/W
°C
Case style TO - 200AC (B-PUK) See Outline Table
K/W
Thermal and Mechanical Specification
ST780C..L Series
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Bulletin I25192 rev. B 02/94
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- L = Puk Case TO-200AC (B-PUK)
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8- Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)
Ordering Information Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Device Code
51 2 3 4
ST 78 0 C 06 L 1
7
68
Single Side Double Side Single Side Double Side
180° 0.009 0.009 0.006 0.006
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015 K/W TJ = TJ max.
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
ST780C..L Series
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Bulletin I25192 rev. B 02/94
5
Fig. 2 - Current Ratings Characteristics
Outline Table
Fig. 1 - Current Ratings Characteristics
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
30°60° 90° 120° 180°
Average O n- state Current (A)
Con ducti on Ang le
Maximum Allowabl e Heats ink Temperature (°C)
ST780C..L Serie s
(Single Side Cooled)
R ( DC) = 0.073 K /W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
DC
30°60° 90°120° 180°
Average On-state Current (A)
Conduction Period
Max imum Allowable Heatsin k Temperatur e (°C)
ST780C..L Ser ies
(S ingl e Sid e Coo le d)
R (DC) = 0.073 K/W
thJ-hs
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
0.7 (0.03) MIN. 34 (1.34) DIA. MAX.
53 (2.09) DIA. MAX.
58 .5 (2.3) DIA. MAX.
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
4.7 (0.18)
27 (1.06) MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20°± 5°
36.5 (1.44)
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
ST780C..L Series
6www.irf.com
Bulletin I25192 rev. B 02/94
20
30
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000
30°60° 90° 120° 180°
Average On-state Curren t (A)
Con duction Ang le
Max imum Allowable Heatsink Tem perature (°C)
ST7 8 0C ..L Series
(Double Side Cool ed)
R (DC) = 0.031 K /W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 500 1000 1500 2000 2500 3000
DC
30°60° 90°120° 180°
Av erage On-state Current ( A)
Cond ucti on Period
M axi mu m A llowa ble He atsin k Tem p e r ature (°C)
ST780C..L Ser ies
(Double Side Cooled)
R (DC) = 0.031 K/W
thJ-hs
0
500
1000
1500
2000
2500
0 400 800 1200 1600 2000
180°
120°
90°
60°
30°
RMS Limit
Cond uction Angle
Ma x imum Average On-sta te Po wer Loss (W)
A v era ge On-state Cu rr ent ( A)
S T780C..L Series
T = 125°C
J
0
500
1000
1500
2000
2500
3000
3500
0 500 1000 1500 2000 2500 3000
DC
180°
120°
90°
60°
30°
RMS Limit
Condu ct ion P eri od
Max imum Averag e On- stat e Power Loss (W)
Average On-state Current (A)
ST78 0 C..L Ser ies
T = 12 5°C
J
10000
12000
14000
16000
18000
20000
22000
1 10 100
Nu m ber Of Eq ual Amplit u de Half Cycle Current P ulses ( N )
Pe ak Half Sine Wave On-state Curr e nt (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST780C..L Series
At Any Rated L oad Con dition And W ith
Rated V Applied Following Surge.
RRM
10000
12000
14000
16000
18000
20000
22000
24000
26000
0.01 0.1 1
Pulse Train Duration (s)
Versus Pulse Train Duration. Cont rol
Pe ak Half Sin e Wave On-state Current ( A )
I nitial T = 12 5°C
No Voltage Reapplied
Rat ed V Reapplied
RRM
J
ST7 8 0C ..L Series
M axim um Non Repetitive Surge Curre nt
Of C o n d u c tio n Ma y No t Be Ma int a i n ed .
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
ST780C..L Series
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Bulletin I25192 rev. B 02/94
7
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Gate Characteristics
100
1000
10000
0.5 1 1.5 2 2.5
T = 25°C
J
Instantan eous On-stat e Current (A)
Instantaneous On -state Voltage (V)
T = 125°C
J
ST780C..L Series
0.001
0.01
0.1
0.001 0.01 0.1 1 10
S qua re W av e Pul s e Durat io n (s )
thJ-hs
Stea dy St a te Va lue
R = 0.073 K/W
( Single Sid e Cooled)
R = 0.031 K/W
( Doub le Sid e Cooled)
(DC Operation)
thJ-hs
thJ-hs
ST780C..L Se ries
Transient Thermal Impedan ce Z (K/W)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b) (a)
Tj=25 °C
Tj=125 °C
Tj=-40 ° C
(2) (3)
Insta ntaneous Gat e Curre nt (A)
Instant an eou s Gat e Voltage (V)
a) Rec o mm ended load li ne for
b) Re com mended l oad line for
<=30% rated di/ dt : 10V, 10o hms
Frequency Limited by P G(AV )
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Re cta ngul a r ga te pul se
Device: ST780C..L Series
(4)
