Bulletin I25192 rev. B 02/94 ST780C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 1350A Center amplifying gate Metal case with ceramic insulator International standard case TO-200AC (B-PUK) TypicalApplications DC motor controls Controlled DC power supplies AC controllers case style TO-200AC (B-PUK) Major Ratings and Characteristics Parameters ST780C..L Units 1350 A 55 C 2700 A 25 C @ 50Hz 24400 A @ 60Hz 25600 A @ 50Hz 2986 KA2s @ 60Hz 2726 KA2s 400 to 600 V 150 s - 40 to 125 C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t V DRM/V RRM tq typical TJ www.irf.com 1 ST780C..L Series Bulletin I25192 rev. B 02/94 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, max. repetitive VRSM , maximum non- I DRM/I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max V V mA 04 400 500 06 600 700 Type number ST780C..L 80 On-state Conduction IT(AV) Parameter ST780C..L Max. average on-state current 1350 (500) A 180 conduction, half sine wave 55 (85) C double side (single side) cooled @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Units Conditions 2700 Max. peak, one-cycle 24400 non-repetitive surge current 25600 DC @ 25C heatsink temperature double side cooled t = 10ms A 20550 I2 t Maximum I2t for fusing t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. KA2s 1928 V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 29860 KA2s 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied (I > x IT(AV)),TJ = TJ max. 0.90 (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. 0.14 slope resistance reapplied t = 10ms V Low level value of on-state High level value of on-state t = 8.3ms (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max. 0.80 slope resistance r t2 100% VRRM 2986 2112 Maximum I2t for fusing reapplied t = 10ms 21500 2726 I2 t No voltage t = 8.3ms m (I > x IT(AV)),TJ = TJ max. 0.13 VTM Max. on-state voltage 1.31 IH Maximum holding current 600 IL Typical latching current 1000 V mA I = 3600A, T J = TJ max, t = 10ms sine pulse pk p T J = 25C, anode supply 12V resistive load Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current ST780C..L 1000 td Typical delay time 1.0 t Typical turn-off time 150 Units Conditions A/s Gate current 1A, di g /dt = 1A/s s 2 q Gate drive 20V, 20, tr 1s TJ = T J max, anode voltage 80% VDRM Vd = 0.67% VDRM, TJ = 25C ITM = 750A, TJ = TJ max, di/dt = 60A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, t = 500s p www.irf.com ST780C..L Series Bulletin I25192 rev. B 02/94 Blocking Parameter ST780C..L Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/s T J = TJ max. linear to 80% rated V DRM IDRM IRRM Max. peak reverse and off-state leakage current 80 mA TJ = TJ max, rated VDRM /V RRM applied Triggering Parameter PGM ST780C..L Maximum peak gate power Max. peak positive gate current +VGM Maximum peak positive 3.0 Maximum peak negative VGT V TJ = TJ max, tp 5ms DC gate voltage required - 100 200 50 - 2.5 - 1.8 3.0 T J = - 40C mA 10 0.25 T J = 25C T J = 125C T J = - 40C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied T J = 25C T J = 125C - DC gate current not to trigger DC gate voltage not to trigger p MAX. 200 1.1 VGD T J = TJ max, t 5ms DC gate current required to trigger IGD A 5.0 TYP. to trigger p T J = TJ max, f = 50Hz, d% = 50 20 gate voltage IGT W 2.0 gate voltage -VGM T J = TJ max, t 5ms 10.0 PG(AV) Maximum average gate power IGM Units Conditions mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST780C..L TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F wt Mounting force, 10% Approximate weight Case style www.irf.com Units C 0.073 0.031 0.011 0.006 Conditions DC operation single side cooled K/W K/W 14700 N (1500) (Kg) 255 g TO - 200AC (B-PUK) DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table 3 ST780C..L Series Bulletin I25192 rev. B 02/94 RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side Conduction angle Units 180 0.009 0.009 0.006 0.006 120 0.011 0.011 0.011 0.011 90 0.014 0.014 0.015 0.015 60 0.020 0.020 0.021 0.021 30 0.036 0.036 0.036 0.036 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 78 0 C 06 L 1 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/sec (Standard selection) L 4 = 1000V/sec (Special selection) www.irf.com ST780C..L Series Bulletin I25192 rev. B 02/94 Outline Table 34 (1.34) DIA. MAX. 0.7 (0.03) MIN. 27 (1.06) MAX. TWO PLACES PIN RECEPTACLE AMP. 60598-1 Case Style TO-200AC (B-PUK) 53 (2.09) DIA. MAX. 0.7 (0.03) MIN. All dimensions in millimeters (inches) 6.2 (0.24) MIN. 20 5 58.5 (2.3 ) D IA. MAX. 4.7 (0.18) 36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP 130 ST780C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.073 K/W 120 110 100 90 Conduction Angle 80 30 70 60 90 60 120 180 50 40 0 200 400 600 800 1000 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. 130 ST780C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.073 K/W 120 110 100 90 80 Conduction Period 70 60 30 50 60 40 90 120 30 20 0 200 400 600 180 DC 800 1000 1200 1400 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST780C..L Series 130 ST780C..L Series (Double Side Cooled) R thJ-hs (DC) = 0.031 K/W 120 110 100 90 80 Conduction Angle 70 60 30 50 60 90 40 120 180 30 20 0 400 800 1200 1600 2000 Maximum Allowable Heatsink Temperat ure (C) Maximum Allowable Heatsink Temperature (C) Bulletin I25192 rev. B 02/94 130 ST780C..L Series (Double Side Cooled) R thJ-hs (DC) = 0.031 K/W 120 110 100 90 80 Conduction Period 70 30 60 60 50 90 120 40 180 30 DC 20 0 500 180 120 90 60 30 RMS Limit 1000 Conduction Angle ST780C..L Series T J = 125C 500 0 0 800 1200 1600 2500 3000 3500 DC 180 120 90 60 30 3000 2500 2000 RMS Limit 1500 Conduction Period 1000 ST780C..L Series TJ = 125C 500 0 0 2000 500 1000 1500 2000 2500 3000 Average On-state Current (A) Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 22000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 20000 18000 16000 14000 12000 ST780C..L Series 10000 1 6 400 Maximum Average On-state Power Loss (W) 2500 1500 1500 2000 Fig. 4 - Current Ratings Characteristics 10 100 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-st ate Power Loss (W) Fig. 3 - Current Ratings Characteristics 2000 1000 Average On-state Current (A) Average On-state Current (A) 26000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C 22000 No Voltage Reapplied Rated V RRMReapplied 20000 24000 18000 16000 14000 12000 ST780C..L Series 10000 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST780C..L Series Bulletin I25192 rev. B 02/94 Instantaneous On-state Current (A) 10000 TJ = 25C 1000 TJ = 125C ST780C..L Series 100 0.5 1 1.5 2 2.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/W) Fig. 9 - On-state Voltage Drop Characteristics 0.1 Steady State Value R thJ-hs = 0.073 K/W (Single Side Cooled) R thJ-hs = 0.031 K/W (Double Side Cooled) 0.01 (DC Operation) ST780C..L Series 0.001 0.001 0.01 0. 1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (1) (2) (3) (4) PGM = PGM = PGM = PGM = 10W, 20W, 40W, 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) Tj=-40 C Tj=25 C Tj=125 C 1 (1) (2) (3) (4) VGD IGD 0. 1 0.001 0. 01 Frequency Limited by PG(AV) Device: ST780C..L Series 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics www.irf.com 7